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    BPW85B Search Results

    BPW85B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPW85B Temic Semiconductors Silicon NPN Phototransistor Original PDF
    BPW85B Vishay Intertechnology Silicon NPN Phototransistor Original PDF
    BPW85B Vishay Telefunken Phototransistor, 1nA Dark Current, 850nm Wavelength Original PDF
    BPW85B Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    BPW85B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11

    BPW85

    Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
    Text: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 BPW85A BPW85B BPW85C Phototransistor bpw 80

    Untitled

    Abstract: No abstract text available
    Text: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW85, BPW85A, BPW85B, BPW85C BPW85 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 2002/95/EC. 2011/65/EU. JS709A

    bpw85c

    Abstract: No abstract text available
    Text: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 2011/65/EU 2002/95/EC. 2011/65/EU. bpw85c

    Untitled

    Abstract: No abstract text available
    Text: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW85, BPW85A, BPW85B, BPW85C BPW85 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    BPW85C

    Abstract: 416 npn phototransistor 8277 bpw 104 BPW85 BPW85A BPW85B Silicon NPN Phototransistor
    Text: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 18-Jul-08 BPW85C 416 npn phototransistor 8277 bpw 104 BPW85A BPW85B Silicon NPN Phototransistor

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original
    PDF VMN-MS6520-1311 TSSP4038

    bpw 104

    Abstract: bpw 50 BPW85 BPW85A BPW85B BPW85C
    Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original
    PDF BPW85 BPW85 2002/95/EC 2002/96/EC 08-Apr-05 bpw 104 bpw 50 BPW85A BPW85B BPW85C

    BPW85

    Abstract: BPW85A BPW85B BPW85C bpw 104
    Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared


    Original
    PDF BPW85 BPW85 D-74025 16-Nov-99 BPW85A BPW85B BPW85C bpw 104

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original
    PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    bpw 104

    Abstract: No abstract text available
    Text: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW85 BPW85 D-74025 20-May-99 bpw 104

    Untitled

    Abstract: No abstract text available
    Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815


    Original
    PDF BPW85 BPW85 2002/95/EC 2002/96/EC BPW85A BPW85B BPW85C

    BPW85

    Abstract: BPW85A BPW85B BPW85C infrared 950nm
    Text: BPW 85 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible


    Original
    PDF BPW85 D-74025 BPW85A BPW85B BPW85C infrared 950nm

    Untitled

    Abstract: No abstract text available
    Text: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW85 BPW85 D-74025 16-Nov-99

    8239

    Abstract: Vishay Telefunken Phototransistor BPW85 BPW85A BPW85B BPW85C
    Text: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW85 BPW85 D-74025 16-Nov-99 8239 Vishay Telefunken Phototransistor BPW85A BPW85B BPW85C

    BPW85

    Abstract: BPW85A BPW85B BPW85C
    Text: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared


    Original
    PDF BPW85 BPW85 D-74025 16-Nov-99 BPW85A BPW85B BPW85C

    sensor BPW34 application note

    Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,


    Original
    PDF VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note

    005MW

    Abstract: BPW85
    Text: BPW85 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original
    PDF BPW85 BPW85 D-74025 29-Mar-04 005MW

    Untitled

    Abstract: No abstract text available
    Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original
    PDF BPW85 BPW85 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    Vishay TYPE 40D

    Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original
    PDF VMN-MS6520-1506 Vishay TYPE 40D Vishay 40d AC 1506 panasonic inverter dv 707

    BPW85C

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package


    OCR Scan
    PDF BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100

    c1g smd

    Abstract: bpv10nf TEMD2100
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -


    OCR Scan
    PDF CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100

    Untitled

    Abstract: No abstract text available
    Text: BPW85 w m m f _ ▼ Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 0 3 mm plastic package. Due to its waterclear epoxy the


    OCR Scan
    PDF BPW85 BPW85 20-May-99