Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • blll54T DGDflb3fl 302 HIMRN M T 4C 16260/1 256KX16 W ID ED R A M MICRON I s e m ic o n d u c t o rin c WIDE DRAM 256K X 1 6 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages
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blll54T
500mW
024-cycle
MT4C16260/1
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Untitled
Abstract: No abstract text available
Text: MICRON SEM ICO NDUCTOR INC b'IE D • blll54T □ □□Tia'I 141 H M R N 256K SRAM 1DIE SEMICONDUCTOR, INC- SRAM DIE 256K SRAM 256K X 1, 64K X 4, 32K x 8 FEATURES • • • • DIE OUTLINE Top View Single 5V or 3.3V power supply All I/O pins are 5V tolerant
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blll54T
MT5C2565
150mm
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T2D 93
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E D • blll54T ÜQO'îEe? ñ'ÍQ BIMRN MICRON 256K SRAM MT5C2561 X 1 SR A M 256K X 1 SRAM • H igh speed: 1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • High-perform ance, low-power, CM O S double-m etal process • Single +5V ±10% pow er supply_
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blll54T
MT5C2561
24-Pin
T2D 93
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Untitled
Abstract: No abstract text available
Text: MT4C2M8B1 S 2 MEG x 8 DRAM MICRON I TECHNOLOGY, INC. DRAM 2 MEG x 8 DRAM 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x8 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5.0V ±10% power supply
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250mW
048-cycle
28-Pin
blll54T
00157Mb
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C1994
Abstract: No abstract text available
Text: ADVANCE M IC R O N I MT20D840 8 MEG X 40 DRAM MODULE 8 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-perform ance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins are TTL-compatible
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MT20D840
72-pin
030mW
048-cycle
096-cycle
DE-16)
MT20D840G
T20DA40
blll541
C1994
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K32/36F1 128K X 32/36 SYNCBURST SRAM |U |IC R O N 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View
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MT58LC128K32/36F1
100-Pin
160-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4 MEG X 64 DRAM SODIMM M IC R O N I TF.CHNOLOOY, INC. SMALL-OUTLINE DRAM MODULE MT4LDT464H X S FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-stand ard pinout in a 144-pin, sm all-outline, dual in-line m em ory m odule (DIMM) • 32MB (4 M eg x 64)
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MT4LDT464H
144-pin,
096-cycle
256ms
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Untitled
Abstract: No abstract text available
Text: M I C R O N I M T 5 8 L C 1 2 8 K 1 6/18D8 128K x 16/18 SYNCBURST SRAM lECHNOtOC.V INC SYNCHRONOUS 128K x 16/18 SRAM O +3-3V SUPPLY, PIPELINED, BURST COUNTER a n d s in g l e - c y c l e d e s e l e c t D A I t Jl OliMIVI FEATURES Fast access times: 4.5, 5 ,6 and 7ns
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6/18D8
MT58LC128K16/18D8
0022A73
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON » j! MT24D836 8 MEG X 36, 16 MEG x 18 DRAM MODULE 8 MEG x 36,16 MEG x18 DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-perform ance CMOS silicon-gate process • Single 5V ±10% pow er supply
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MT24D836
72-pin
536mW
048-cycle
DE-15)
MT24D836M/G
A0-A10
T24D836
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dram 88 pin
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T
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MT12D88C25636
88-Pin
dram 88 pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 1 MT28SF200 128K x 16, 256K x 8 FLASH MEMORY FLASH MEMORY 128K x 16,256K x 8 — FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|_iA at 5V Vcc; 2|iA at
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MT28SF200
16KB/8K-word
100ns
110ns,
150ns
072x16
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E ]> • blllS^H DOQTSTb 122 ■ MRN ADVANCE MICRON 64K MT58LC64K18A6 18 SYNCHRONOUS SRAM 64K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • • • « • • • • • • • Fast access times: 7,10,12 and 15ns
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MT58LC64K18A6
MT58LC64K18A6EJ-10
MT56LC64K18A6
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Untitled
Abstract: No abstract text available
Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by
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MT4D232
MT8D432
72-pin,
024-cycle
048-cycle
P199S.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M I l^ n n N 64K +3.3VSUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE: 5 and 6ns Single +3.3V ±5% pow er supply 5V-tolerant I /O
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MT58LC64K18C4/A6
MT58LC64K18C4LG-8
MT5SLC64K18C4/A6
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M I I C R EDODRAM O N TECHNOLOGY INC 8 H R AM UnMIÏI M E G x 8 MT4LC8M8P4 MT4LC8M8C2 FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 12 row, 11 column addresses C2 or 13 row, 10 column addresses (P4)
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096-cycle
32-Pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T 5 8 L C 1 2 8 K 16/ 18 G 1 1 2 8 K X 16 /18 S Y N C B U R S T S R A M MICRON I TECHNOLOGY, INC. SYNCHRONOUS SRAM 128Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES PIN ASSIGNMENT Top View 100-Pin TQFP
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128Kx
100-Pin
MT58LC128K16/18G1
blll54t
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Untitled
Abstract: No abstract text available
Text: MT4C1M16C3 S 1 MEG X 16 DRAM MICRON I TECHNOLOGY, INC. DRAM 1 MEG x 16 DRAM 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single +5.0V ±10% power supply
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MT4C1M16C3
11L-compatible
024-cycle
290mW
42-Pin
ac012
D017370
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Untitled
Abstract: No abstract text available
Text: MICRON I MT4C4M4E9 S 4 MEG X 4 DRAM TECHNOLOGY, MC. DRAM 4 MEG x 4 DRAM 4K REFRESH, 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
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220mW
096-cycle
128ms
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Untitled
Abstract: No abstract text available
Text: MICRON • 128K X TECHNOLOGY. MC. SYNCHRONOUS SRAM 128KX 16/18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP (SA-1) Fast access times: 4.5,5,6 and 7ns
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128KX
100-Pin
MT58LC128K16/18CS
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d472a
Abstract: MT18LD472A
Text: ADVANCE M m I C lN ~ 2, 4 MEG X BURST EDO DRAM MODULE MT9LD272A B, MT18LD472A B 72 BURST EDO DRAM MODULES 2, 4 MEG x 72 16, 322 m MEGABYTE, 1 6 ,3 e g a b y t e , NONBUFF nonbuffered, 3.3V, ECC, 8 CAS, BURST EDO FEATURES • • • • • • PIN ASSIGNMENT Front View
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MT9LD272A
MT18LD472A
168-pin,
048-cycle
MT9LD272AB,
MT18ID472AB
t2/95
d472a
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC ^ C a iü lN I MT2LSYT3272T4/T6, MT4LSY6472T4/T6 32K, 64K x 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM SYNCHRONOUS SRAM MODULE 256KB/512KB, 3.3V, PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES • • • • PIN ASSIGNMENT Front View
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MT2LSYT3272T4/T6,
MT4LSY6472T4/T6
160-lead,
256KB/512KB,
160-PIN
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Untitled
Abstract: No abstract text available
Text: MICRON MT4C16257 256K X 16 DRAM I ,lt— DRAM 256K x 16 DRAM 5V, FAST PAGE M O DE PIN ASSIGNMENT Top View • In d u stry -sta n d a rd x l 6 p in o u ts, tim in g , fu n ctio n s an d packages • H ig h -p erfo rm a n ce C M O S silico n -g ate process
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MT4C16257
12-cy
40-Pin
00122A2
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and
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GG07b0S
MT4C4256
512-cycle
MT4C4256)
175mW
MT4C4256L
200nA
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samco
Abstract: No abstract text available
Text: niCRON SEMICONDUCTOR INC blllSMT D0Q7flbü 7E3 • U R N b3E D ADVANCE MT4 L C1 M 16C3/5/6/7 1 MEG X 16 W ID E DRAM I^i i c r o n WIDE DRAM 1 MEG 16 DRAM X 5.0V FAST-PAGE-MODE (MT4C1M16C3/5/6/7) 3.0/3.3V, FAST-PAGE-MODE (MT4LC1M16C3/5/6/7) FEATURES • Industry-standard xl6 pinouts, timing, functions
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16C3/5/6/7
MT4C1M16C3/5/6/7)
MT4LC1M16C3/5/6/7)
500mW
024-cycle
C1M16CaWai7S
samco
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