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    BKA AMPLIFIER Search Results

    BKA AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    BKA AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M58CR064C

    Abstract: A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56 M58CR064C A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56

    VFBGA56

    Abstract: A0-A21 CR10 M58WR064 M58WR064B M58WR064T
    Text: M58WR064T M58WR064B 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064T M58WR064B 52MHz VFBGA56 VFBGA56 A0-A21 CR10 M58WR064 M58WR064B M58WR064T

    AD8616

    Abstract: AD5542 AD8615 AD8618 10NV
    Text: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 APPLICATIONS Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifiers Audio Photodiode amplification PIN CONFIGURATIONS


    Original     		PDF AD8615/AD8616/AD8618 AD8615/AD8616/AD8618 AD8615/AD8616/ AD8618 14-Lead AD8616 AD5542 AD8615 10NV

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    A0-A21

    Abstract: CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56 A0-A21 CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    VFBGA60

    Abstract: CR10 M58WR128EB M58WR128ET
    Text: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR128ET M58WR128EB 54MHz 100ns VFBGA60 VFBGA60 CR10 M58WR128EB M58WR128ET

    Untitled

    Abstract: No abstract text available
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56

    CR10

    Abstract: J-STD-020B M30W0R7000B1
    Text: M30W0R7000T1 M30W0R7000B1 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M30W0R7000T1 M30W0R7000B1 66MHz CR10 J-STD-020B M30W0R7000B1

    Untitled

    Abstract: No abstract text available
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56

    VFBGA60

    Abstract: 7FF00
    Text: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR128ET M58WR128EB 54MHz 100ns VFBGA60 VFBGA60 7FF00

    A0-A21

    Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56 A0-A21 CR10 M58WR064EB M58WR064ET VFBGA56

    CR10

    Abstract: J-STD-020B M58WR128FB VFBGA56
    Text: M58WR128FT M58WR128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR128FT M58WR128FB 66MHz CR10 J-STD-020B M58WR128FB VFBGA56

    photoconductive 011

    Abstract: AD8616 photoconductive diode AD8615 AD8618 RU-14 ad8616armz-reel1 JC-61 photodiode preamplifier
    Text: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 FEATURES current noise. The parts use a patented trimming technique that achieves superior precision without laser trimming. The AD8615/AD8616/AD8618 are fully specified to operate


    Original     		PDF AD8615/AD8616/AD8618 AD8615/AD8616/AD8618 14-Lead photoconductive 011 AD8616 photoconductive diode AD8615 AD8618 RU-14 ad8616armz-reel1 JC-61 photodiode preamplifier

    CR10

    Abstract: M58WR032EB M58WR032ET VFBGA56
    Text: M58WR032ET M58WR032EB 32 Mbit 2Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR032ET M58WR032EB 54MHz 100ns CR10 M58WR032EB M58WR032ET VFBGA56

    CR10

    Abstract: J-STD-020B M58WR032FB M58WR032FT VFBGA56 JEDEC J-STD-020B
    Text: M58WR032FT M58WR032FB 32 Mbit 2Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR032FT M58WR032FB 66MHz CR10 J-STD-020B M58WR032FB M58WR032FT VFBGA56 JEDEC J-STD-020B

    Untitled

    Abstract: No abstract text available
    Text: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifiers Audio Photodiode amplification GENERAL DESCRIPTION The AD8615/AD8616/AD8618 are dual/quad, rail-to-rail, input


    Original     		PDF AD8615/AD8616/AD8618 AD8615 TSOT-23 AD8616 14-Lead

    AD8615

    Abstract: photoconductive 011 AD8616 AD8618 RU-14
    Text: Precision 20 MHz CMOS Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 APPLICATIONS Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifier Audio Photodiode amplification PIN CONFIGURATIONS


    Original     		PDF AD8615/AD8616/AD8618 AD8615 04648-B-050 TSOT-23 AD8616 14-Lead AD8615 photoconductive 011 AD8616 AD8618 RU-14

    Untitled

    Abstract: No abstract text available
    Text: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifiers Audio Photodiode amplification GENERAL DESCRIPTION The AD8615/AD8616/AD8618 are single/dual/quad, rail-torail, input and output, single-supply amplifiers featuring very


    Original     		PDF AD8615/AD8616/AD8618 AD8615/AD8616/AD8618 AD8615/AD8616/ AD8618 14-Lead

    AD8615

    Abstract: AD8616 AD8618 RU-14 AD8615AUJZ-R2 BKA amplifier
    Text: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifiers Audio Photodiode amplification GENERAL DESCRIPTION The AD8615/AD8616/AD8618 are single/dual/quad, rail-torail, input and output, single-supply amplifiers featuring very


    Original     		PDF AD8615/AD8616/AD8618 AD8615/AD8616/AD8618 AD8615/AD8616/ AD8618 14-Lead AD8615 AD8616 RU-14 AD8615AUJZ-R2 BKA amplifier

    Untitled

    Abstract: No abstract text available
    Text: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY SUPPLY VOLTAGE – VDDF = 1.65V to 2.2V SRAM 8 Mbit (512K x 16 bit) – VDDS = VDDQF = 2.7V to 3.3V


    Original     		PDF M36WT864TF M36WT864BF 100ns M36WT864TF: 8810h M36WT864BF: 8811h

    T8686

    Abstract: LE520
    Text: M58WR032FT M58WR032FB 32 Mbit 2Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR032FT M58WR032FB 66MHz T8686 LE520

    CR10

    Abstract: M36WT864BF M36WT864TF
    Text: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V


    Original     		PDF M36WT864TF M36WT864BF 100ns M36WT864TF: 8810h M36WT864BF: 8811h CR10 M36WT864BF M36WT864TF

    M58WR032QB

    Abstract: M58WR032QT VFBGA56 CR10 M58WR016QB M58WR016QT
    Text: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR016QT M58WR016QB M58WR032QT M58WR032QB 66MHz M58WR032QB VFBGA56 CR10 M58WR016QB