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    M58CR064D Search Results

    M58CR064D Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M58CR064D STMicroelectronics 64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY F Original PDF
    M58CR064D STMicroelectronics 64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58CR064D100ZB6T STMicroelectronics 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory Original PDF
    M58CR064D10ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58CR064D120ZB6T STMicroelectronics 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory Original PDF
    M58CR064D12ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58CR064D85ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58CR064D90ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58CR064DZB STMicroelectronics 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory Original PDF

    M58CR064D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    88CAh

    Abstract: No abstract text available
    Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA


    Original     		PDF M58CR064C M58CR064D 54MHz 100ns TFBGA56 A0-A21 88CAh

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA


    Original     		PDF M58CR064C M58CR064D 54MHz 100ns TFBGA56

    8802H

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz TFBGA56 8802H

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    A0-A21

    Abstract: CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56 A0-A21 CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56

    88-CB

    Abstract: No abstract text available
    Text: M58CR064C M58CR064D 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C M58CR064D 54MHz TFBGA56 88-CB

    M58CR064C

    Abstract: A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56 M58CR064C A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56

    TA247

    Abstract: M58CR064C M58CR064D TFBGA56
    Text: TA247 TECHNICAL ARTICLE ST challenges 3G Mobile Communications: High-speed 64 Mbit Low Voltage Flash Memory . Marco Redaelli, STMicroelectronics, Agrate, Italy Future third generation mobile communications will support high-speed multimedia data transfers


    Original     		PDF TA247 M58CR064 TA247 M58CR064C M58CR064D TFBGA56

    AN1655

    Abstract: C1655C M58CR032C M58CR032D M58CR064C M58CR064D M58CR064P M58CR064Q
    Text: AN1655 APPLICATION NOTE Software Drivers for the M58CR032 and M58CR064 Flash Memories CONTENTS • M58CR032 and M58CR064 PROGRAMMING MODEL – Bus Operations Commands and ■ STATUS REGISTER ■ A DETAILED EXAMPLE ■ HOW TO USE THE SOFTWARE DRIVER – General Considerations


    Original     		PDF AN1655 M58CR032 M58CR064 M58CR032C, M58CR032D, M58CR064C, M58CR064D, M58CR064P AN1655 C1655C M58CR032C M58CR032D M58CR064C M58CR064D M58CR064Q