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    M58WR064 Price and Stock

    Micron Technology Inc M58WR064EB70ZB6

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    Micron Technology Inc M58WR064KT7AZB6E

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    Micron Technology Inc M58WR064KB70ZB6E

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    Micron Technology Inc M58WR064KB7AZB6E

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    Micron Technology Inc M58WR064KU70ZA6E

    IC FLASH 64MBIT PARALLEL 88VFBGA
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    Find more M58WR064 price and stock on Findchips.com

    M58WR064 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M58WR064 STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF
    M58WR064B STMicroelectronics 64 MBIT (4MB x 16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58WR064B100ZB6T STMicroelectronics 64 Mbit (4Mb x 16, Multiple Bank, Burst )1.8V Supply Flash Memory Original PDF
    M58WR064B70ZB6T STMicroelectronics 64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory Original PDF
    M58WR064B85ZB6T STMicroelectronics 64 Mbit (4Mb x 16, Multiple Bank, Burst )1.8V Supply Flash Memory Original PDF
    M58WR064EB STMicroelectronics 64 MBIT (4MB x 16, MULTIPLE BANK, BURST) 1.8V SUP Original PDF
    M58WR064EB10ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064EB70ZB6 STMicroelectronics 64 MBIT (4MB x 16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58WR064EB70ZB6 STMicroelectronics Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 56VFBGA Original PDF
    M58WR064EB70ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064EB80ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064EBZB STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF
    M58WR064ET STMicroelectronics 64 MBIT (4MB x 16, MULTIPLE BANK, BURST) 1.8V SUP Original PDF
    M58WR064ET10ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064ET70ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064ET80ZB6T STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF
    M58WR064ETZB STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF
    M58WR064E-ZBT STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF
    M58WR064FB STMicroelectronics 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR064FB60ZB6F STMicroelectronics 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF

    M58WR064 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A0-A21

    Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56 A0-A21 CR10 M58WR064EB M58WR064ET VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KL70ZA6F

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR064K

    CR10

    Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)


    Original     		PDF M58WR064HU M58WR064HL 66MHz CR10 CR14 M58WR064HL M58WR064HU VFBGA44

    F8000-FFFFF

    Abstract: No abstract text available
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit F8000-FFFFF

    CR14

    Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit CR14 M58WR032KU VFBGA44 MS-328

    M58WR032KT

    Abstract: M58WR032KB M58WR064KB M58WR016KT numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K M58WR016KB
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit M58WR064KB numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K

    unlock mobile phones codes

    Abstract: unlock mobile codes use of microprocessors in mobile phones M58W064 imei M58WR064 M58WR064EB M58WR064ET sim information 0.13Um ST
    Text: TA255 TECHNICAL ARTICLE M58WR064x : An Innovative Family of Flexible Flash Memories for Mobile Communications Marco Redaelli, Flash Memory Division, STMicroelectronics, Agrate, Italy Of all applications, mobile communication applications and in particular cellular phones consume


    Original     		PDF TA255 M58WR064x unlock mobile phones codes unlock mobile codes use of microprocessors in mobile phones M58W064 imei M58WR064 M58WR064EB M58WR064ET sim information 0.13Um ST

    M58WR064HB

    Abstract: A0-A21 CR10 M58WR064HT VFBGA56
    Text: M58WR064HT M58WR064HB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064HT M58WR064HB 66MHz M58WR064HB A0-A21 CR10 M58WR064HT VFBGA56

    8811h

    Abstract: No abstract text available
    Text: M58WR064HT M58WR064HB M58WR032HT M58WR032HB 64 Mbit or 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Features summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064HT M58WR064HB M58WR032HT M58WR032HB 66MHz 8811h

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KU70ZA6U M58WR064K

    A0-A21

    Abstract: CR10 M58WR064HB M58WR064HT VFBGA56
    Text: M58WR064HT M58WR064HB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064HT M58WR064HB 66MHz A0-A21 CR10 M58WR064HB M58WR064HT VFBGA56

    M58WR064HUL

    Abstract: 04MAY2006
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary „ Supply voltage –VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O Buffers – VPP = 12 V for fast Program (9 V tolerant)


    Original     		PDF M58WR064HU M58WR064HL M58WR064HUL 04MAY2006

    Untitled

    Abstract: No abstract text available
    Text: M58WR064HT M58WR064HB 64 Mbit 4 Mb x16, multiple bank, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58WR064HT M58WR064HB

    Untitled

    Abstract: No abstract text available
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56

    AN1664

    Abstract: M58WR064EB M58WR064ET M58WR128EB M58WR128ET
    Text: AN1664 APPLICATION NOTE Software Drivers for the M58WR064E and M58WR128E Flash Memories CONTENTS • M58WR064E AND M58WR128E PROGRAMMING MODEL ■ HOW TO USE THE SOFTWARE DRIVER ■ SOFTWARE LIMITATIONS ■ CONCLUSION ■ REVISION HISTORY This application note describes how to use library source code


    Original     		PDF AN1664 M58WR064E M58WR128E M58WR128E M58WR064ET, M58WR064EB, M58WR128ET M58WR128EB M58WR064ET AN1664 M58WR064EB

    Untitled

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit

    A0-A21

    Abstract: CR10 J-STD-020B M58WR064FB M58WR064FT VFBGA56
    Text: M58WR064FT M58WR064FB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064FT M58WR064FB 66MHz A0-A21 CR10 J-STD-020B M58WR064FB M58WR064FT VFBGA56

    VFBGA56

    Abstract: A0-A21 CR10 M58WR064 M58WR064B M58WR064T
    Text: M58WR064T M58WR064B 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064T M58WR064B 52MHz VFBGA56 VFBGA56 A0-A21 CR10 M58WR064 M58WR064B M58WR064T

    15H101

    Abstract: No abstract text available
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit 15H101

    M58WR064KU

    Abstract: 88C0 CR14 M58WR016KL M58WR016KU M58WR032KL M58WR032KU VFBGA44 M58WR064KL
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit 88C0 CR14 M58WR032KU VFBGA44 M58WR064KL

    e2p 25

    Abstract: M36W0R6050T0
    Text: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •


    Original     		PDF M36W0R6050T0 M36W0R6050B0 M36W0R6050T0: 8810h M36W0R6050B0: 8811h e2p 25

    MX29GL256

    Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
    Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes


    Original     		PDF AT49SV163D 48-Pin 48-Ball S29AS016J EN29SL800 S29AS00gest MX29GL256 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D

    Untitled

    Abstract: No abstract text available
    Text: M36D0R6040T0 M36D0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Page Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM • SUPPLY VOLTAGE


    Original     		PDF M36D0R6040T0 M36D0R6040B0 M36D0R6040T0: 8810h M36D0R6040B0: 8811h