M58WR032EB Search Results

M58WR032EB Datasheets (3)

Part	Manufacturer	Description	Type	PDF
M58WR032EB	STMicroelectronics	32 MBIT (2MB X16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY	Original	PDF
M58WR032EB70ZB6	STMicroelectronics	32 MBIT (2MB X16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY	Original	PDF
M58WR032EB70ZB6T	STMicroelectronics	32 MBIT (2MB X16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY	Original	PDF

M58WR032EB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CR10 Abstract: M58WR032EB M58WR032ET VFBGA56 Text: M58WR032ET M58WR032EB 32 Mbit 2Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)	Original	PDF	M58WR032ET M58WR032EB 54MHz 100ns CR10 M58WR032EB M58WR032ET VFBGA56

Catalog Datasheet

MFG & Type

PDF

Document Tags

CR10

Abstract: M58WR032EB M58WR032ET VFBGA56
Text: M58WR032ET M58WR032EB 32 Mbit 2Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

Original

PDF

M58WR032ET M58WR032EB 54MHz 100ns CR10 M58WR032EB M58WR032ET VFBGA56