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    BJT MICROWAVE 15 GHZ Search Results

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    varactor diode model in ADS

    Abstract: zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode
    Text: Advanced Design System 2001 Oscillator DesignGuide August 2001 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		Index-31 varactor diode model in ADS zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode PDF

    microwave transceiver

    Abstract: abstract for wireless communication system loop gain of Colpitts VCO design 5ghz microwave transceiver 3.5 GHz microwave transceiver sensitivity loop gain of Colpitts VCO design 4 ghz 0.18 um CMOS Spiral Inductor technology bjt microwave GHz Drive Base BJT 5.8 ghz Transceiver IC
    Text: The Impact of SiGe BiCMOS Technology on Microwave Circuits and Systems Mehmet Soyuer IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598 E-mail: soyuer@us.ibm.com Abstract This paper focuses on low power and high integration capabilities of SiGe BiCMOS


    Original     		PDF

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


    Original     		11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz PDF

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet PDF

    BJT with i-v characteristics

    Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
    Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available


    Original     		ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK PDF

    SiC BJT

    Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters RF Transistor s-parameter NPN transistor mhz s-parameter bipolar transistor s-parameter RF Bipolar Transistor
    Text: Copyright c [Year] IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Advanced Power Technology's products or services. Internal or personal use of this material is permitted. However, permission to


    Original     		PDF

    30 micro farad capacitor 6000 volt

    Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
    Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability


    Original     		ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660 PDF

    bjt npn m03

    Abstract: BR 123 m03 bjt npn 2SC5437 NE688 NE688M03 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.4±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • • PACKAGE OUTLINE M03


    Original     		NE688M03 NE688M03 24-Hour bjt npn m03 BR 123 m03 bjt npn 2SC5437 NE688 S21E PDF

    transistor bf 458

    Abstract: NE685 S21E UPA806T UPA806T-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1


    Original     		UPA806T NE685 UPA806T 24-Hour transistor bf 458 S21E UPA806T-T1 PDF

    2SC5437

    Abstract: NE688 NE688M03 S21E 15E14
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • PACKAGE OUTLINE M03


    Original     		NE688M03 NE688M03 2SC5437 NE688 S21E 15E14 PDF

    NE68019

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68019 Q1 Collector Base Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS UNITS Parameter seconds 0.64 capacitance farads inductance henries resistance ohms volts amps


    Original     		NE68019 84e-16 0e-14 01e-4 358e-12 162e-12 7e-12 635e-9 08e-12 NE68019 PDF

    0066E

    Abstract: 014e1
    Text: NONLINEAR MODEL NE68518 SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance


    Original     		NE68518 7e-16 9e-13 4e-12 18e-12 2e-12 NE68518 13e-12 14e-12 0066E 014e1 PDF

    Untitled

    Abstract: No abstract text available
    Text: NE68530 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC UNITS Parameter Units time seconds capacitance farads henries


    Original     		NE68530 7e-16 9e-13 40e-12 18e-12 2e-12 13e-12 14e-12 41e-9 PDF

    058E-1

    Abstract: No abstract text available
    Text: NE68018 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.84e-16 MJC 0.64 UNITS Parameter Units time seconds BF 124.9 XCJC capacitance farads


    Original     		NE68018 84e-16 0e-14 01e-4 358e-12 162e-12 7e-12 635e-9 08e-12 058E-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: NE68030 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds IS 3.84e-16 MJC 0.64 BF 124.9 XCJC capacitance farads


    Original     		NE68030 84e-16 0e-14 01e-4 358e-12 162e-12 7e-12 635e-9 08e-12 PDF

    NE68118

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68118 Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LC LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185 XCJC NF 1.02 CJS VAF 15 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11


    Original     		NE68118 7e-16 77e-11 2e-12 8e-12 14e-12 07e-12 01e-12 16NAL NE68118 PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE662M16 CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 1.6e-16 MJC 0.3 BF 105 XCJC 0.1 NF 1.02 CJS VAF 23 VJS 0.75 ADDITIONAL PARAMETERS IKF 0.38 MJS


    Original     		NE662M16 6e-16 3e-15 4e-12 1e-12 2e-12 1e-11 NE662M16 07e-12 09e-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE68130 SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds IS 2.7e-16 MJC 0.56 BF 185 XCJC capacitance farads


    Original     		NE68130 7e-16 77e-11 2e-12 8e-12 14e-12 07e-12 01e-12 52e-9s PDF

    02E-12

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE68133 SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 IS 2.7e-16 Parameters MJC 0.56 Q1 BF 185 XCJC UNITS Parameter Units time seconds capacitance farads


    Original     		NE68133 7e-16 77e-11 2e-12 8e-12 14e-12 07e-12 01e-12 02E-12 PDF

    68519

    Abstract: NE68519 20E12
    Text: NE68519 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7.0e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance


    Original     		NE68519 0e-16 90e-13 4e-12 18e-12 0e-12 13e-12 14e-12 17earads 68519 NE68519 20E12 PDF

    039E-9

    Abstract: 68539 014e1
    Text: NE68539 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC


    Original     		NE68539 7e-16 9e-13 4e-12 18e-12 2e-12 13e-12 14e-12 039E-9 68539 014e1 PDF

    rfsw2045

    Abstract: RFSW2045DC RFSW2045D RFSW-2045
    Text: RFSW2045 RFSW2045DC to 16 Ghz SP4T pHEMT GaAs Switch DC TO 16GHz SP4T pHEMT GaAs SWITCH Package: QFN, 24 pin, 0.8mmx4mmx4mm GND 6 Features  Low Insertion Loss: 2.4dB at 16GHz  High Isolation: 38dB at 16GHz  21nS Switching Speed  GaAs pHEMT Technology


    Original     		RFSW2045DC RFSW2045 16GHz RFSW2045 DS110107 RFSW2045D RFSW-2045 PDF

    InP HBT transistor

    Abstract: HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics ECG003 MOTOROLA RF TRANSISTORS srf
    Text: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications n n DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz


    Original     		ECG003 OT-89 ECG003 OT-89 SS-000375-000 InP HBT transistor HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics MOTOROLA RF TRANSISTORS srf PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 VAF 15 VJS IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.01 IKR Infinity PTF


    Original     		UPA806T 7e-16 9e-13 4e-12 18e-12 3e-12 24-Hour PDF