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    California Eastern Laboratories (CEL) NE68530-T1

    RF TRANS NPN 6V 12GHZ SOT323
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    California Eastern Laboratories (CEL) NE68530-T1-A

    RF TRANS NPN 6V 12GHZ SOT323
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    California Eastern Laboratories (CEL) NE68530

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    Bristol Electronics NE68530 4 2
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    Quest Components NE68530 3
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    NEC Electronics Group NE68530

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    Quest Components NE68530 8
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    NE68530 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE68530 NEC Semiconductor Selection Guide Original PDF
    NE68530 NEC NPN silicon high frequency transistor. Original PDF
    NE68530-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original PDF
    NE68530-T1 NEC Original PDF
    NE68530-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original PDF
    NE68530-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    NE68530 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NE68530 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC UNITS Parameter Units time seconds capacitance farads henries


    Original     		PDF NE68530 7e-16 9e-13 40e-12 18e-12 2e-12 13e-12 14e-12 41e-9

    UPA833TF

    Abstract: q2.048
    Text: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12


    Original     		PDF UPA836TF 7e-16 9e-13 4e-12 18e-12 8e-16 8e-15 5e-16 796e-12 549e-12 UPA833TF q2.048

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    AN1017

    Abstract: NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710
    Text: California Eastern Laboratories AN1017 APPLICATION NOTE Ultra Miniature Surface Mount Transistor Packages: Concerns for Design Engineers Advances in technology are usually exponential. Surface mount transistors are no exception. Introduced in the mid1960s, the SOT-23 was the industry’s first miniature 3-lead


    Original     		PDF AN1017 mid1960s, OT-23 OT-323 24-Hour AN1017 NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710

    cce 7100

    Abstract: transistor d 13009 br 8764 NE685 cce 7100 1027 NE68530 NE68533 2SC4959 2SC5010 NE68518
    Text: NE685 SERIES NEC'S SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ


    Original     		PDF NE685 cce 7100 transistor d 13009 br 8764 NE685 cce 7100 1027 NE68530 NE68533 2SC4959 2SC5010 NE68518

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    cce 7100

    Abstract: 85500 transistor br 8764 cce 7100 0913 transistor d 13009 BF109 NE685 539r P 13009 0803 2SC4959
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE


    Original     		PDF NE685 cce 7100 85500 transistor br 8764 cce 7100 0913 transistor d 13009 BF109 NE685 539r P 13009 0803 2SC4959

    7483 IC

    Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA832TF-T1 UPA835TF IC 566 vco
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA


    Original     		PDF UPA832TF NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 24-Hour 7483 IC NE685 NE68530 NE856 NE85630 S21E UPA832TF-T1 IC 566 vco

    NE85630

    Abstract: T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 ALL LEADS MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130


    Original     		PDF NE02130B NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE94430 NE85630 T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    transistor d 13009

    Abstract: 9622 transistor t 3866 power transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA


    OCR Scan     		PDF UPA832TF NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 24-Hour transistor d 13009 9622 transistor t 3866 power transistor

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan     		PDF OT-23) NE68018

    ha 7741

    Abstract: UPA833TF 13924 IC 7487
    Text: NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA833TF OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, Vce = 3 V, Ic = 3 mA HIGH GAIN: Q1: IS21 EI2 = 3.5 dB TYP at f = 2 GHz, Vce = 1 V,


    OCR Scan     		PDF NE688, NE685) UPA833TF UPA833TF NE68830 NE68530 UPA833TF-T1 UPA836TF ha 7741 13924 IC 7487

    HE 85500

    Abstract: st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 fr 3709 z E 13009 L
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW CO ST • SM A LL AND ULTRA SM ALL SIZE PACKAGES • LOW VO LTA G E/LO W CU R R EN T OPERATION • HIGH GAIN BANDW IDTH PRODUCT: fT o f 12 GHz • NO ISE FIG UR ES O F 1.5 dB AT 2.0 GHZ


    OCR Scan     		PDF NE685 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 HE 85500 st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 fr 3709 z E 13009 L

    NE68019

    Abstract: NE68839 NE68018 NE68719
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3


    OCR Scan     		PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719

    014e1

    Abstract: cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES ♦ • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fr of 1 2 GHz • NOISE FIGURES OF 1.5 dB AT ZQ GHZ


    OCR Scan     		PDF NE685 NE68518-T1 NE68519-T1 E68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour 014e1 cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530

    MJE 13031

    Abstract: 054S1 cd 4637
    Text: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 UPA833TF MJE 13031 054S1 cd 4637

    ta 8653 n

    Abstract: ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA835TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA — Q2.NF = 1.2 dB TYP at f = 1 GHz, Vce = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA835TF NE685, NE856) UPA835TF NE68530 NE85630 UPA835TF-T1 UPA832TF ta 8653 n ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    ka 2843

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P a ckage O u tlin e TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0 .1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA835TF NE685, NE856) NE68530 NE85630 UPA835TF-T1 24-Hour ka 2843