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    California Eastern Laboratories (CEL) NE68519-T1-A

    SAME AS 2SC5010 NPN SILICON AMPL
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    DigiKey NE68519-T1-A Reel 3,000 3,000
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    NE68519-T1-A Digi-Reel 1
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    Quest Components NE68519-T1-A 1,144
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    NexGen Digital NE68519-T1-A 7
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    California Eastern Laboratories (CEL) NE68519-A

    RF TRANS NPN 6V 12GHZ SOT523
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    California Eastern Laboratories (CEL) NE68519-T1

    RF TRANS NPN 6V 12GHZ SOT523
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    California Eastern Laboratories (CEL) NE68519

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    Bristol Electronics NE68519 2
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    Quest Components NE68519 1
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    NE68519 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE68519 NEC Semiconductor Selection Guide Original PDF
    NE68519 NEC NPN silicon high frequency transistor. Original PDF
    NE68519-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ MINIMOLD Original PDF
    NE68519-T1 NEC Original PDF
    NE68519-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SMD Original PDF
    NE68519-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    NE68519 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    68519

    Abstract: NE68519 20E12
    Text: NE68519 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7.0e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance


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    PDF NE68519 0e-16 90e-13 4e-12 18e-12 0e-12 13e-12 14e-12 17earads 68519 NE68519 20E12

    NE68519

    Abstract: NE68019 NE68119 NE85619
    Text: Noise Figure and Associated Gain vs. Frequency 25 4.0 24 VCE = 2.5 V IC = 3.0 mA 23 22 3.0 NE85619 20 NE68119 NE68519 19 18 NE68019 17 16 15 2.0 14 13 12 11 10 1.0 9 NE68119 NE85619 Associated Gain, GA dB Noise Figure, NF (dB) 21 NE68519 8 7 NE68019 6 5


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    PDF NE85619 NE68119 NE68519 NE68019 24-Hour NE68519 NE68019 NE68119 NE85619

    varactor diode for Colpitts oscillator

    Abstract: Colpitts circuit design TT 2188 transistor VCO circuit diagram frequency stability analysis colpitts oscillator colpitts oscillator 27 mhz Colpitts VCO Colpitts VCO design colpitts oscillator loop gain of Colpitts VCO design
    Text: Application Note A Colpitts VCO for Wideband 0.95–2.15 GHz Set-Top TV Tuner Applications APN1006 Introduction Modern set-top DBS TV tuners require high performance, broadband voltage control oscillator (VCO) designs at a competitive cost. To meet these goals, design engineers


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    PDF APN1006 SMV1265-011 6/99A varactor diode for Colpitts oscillator Colpitts circuit design TT 2188 transistor VCO circuit diagram frequency stability analysis colpitts oscillator colpitts oscillator 27 mhz Colpitts VCO Colpitts VCO design colpitts oscillator loop gain of Colpitts VCO design

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    AN1017

    Abstract: NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710
    Text: California Eastern Laboratories AN1017 APPLICATION NOTE Ultra Miniature Surface Mount Transistor Packages: Concerns for Design Engineers Advances in technology are usually exponential. Surface mount transistors are no exception. Introduced in the mid1960s, the SOT-23 was the industry’s first miniature 3-lead


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    PDF AN1017 mid1960s, OT-23 OT-323 24-Hour AN1017 NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710

    cce 7100

    Abstract: transistor d 13009 br 8764 NE685 cce 7100 1027 NE68530 NE68533 2SC4959 2SC5010 NE68518
    Text: NE685 SERIES NEC'S SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ


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    PDF NE685 cce 7100 transistor d 13009 br 8764 NE685 cce 7100 1027 NE68530 NE68533 2SC4959 2SC5010 NE68518

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


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    PDF

    Colpitts VCO design

    Abstract: saw Colpitts circuit design Colpitts VCO Alpha Industries APN1003 PN Junction Diode varactor Colpitts APN1002 m6 transitor varactor diode for Colpitts oscillator
    Text: Application Note VCO Designs for Wireless Handset and CATV Set-Top Applications APN1012 Introduction Voltage Controlled Oscillators VCOs have come to the forefront of RF designs together with the first PLL circuits. In the era before the PLL, oscillators were mostly free


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    PDF APN1012 APN1005, APN1007, APN1001, APN1002, 8/99A Colpitts VCO design saw Colpitts circuit design Colpitts VCO Alpha Industries APN1003 PN Junction Diode varactor Colpitts APN1002 m6 transitor varactor diode for Colpitts oscillator

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器(µ PCx×××,µPG××××) 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


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    PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


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    PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


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    PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


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    PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


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    PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


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    PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


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    PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    CR10-101J-T

    Abstract: colpitts oscillator using 741 Colpitts VCO design APN1010 varactor diode for Colpitts oscillator kyocera sot 23-5 Tuner Applications APN1006 meander-line VCO circuit diagram 1.2 ghz tuner
    Text: Application Note A VCO Design for WLAN Applications in the 2.4–2.5 GHz ISM Band APN1010 Introduction The increased demand for mobile network connections has lead to the establishment of RF interface standards for Wireless Local Area Networks WLANs . The


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    PDF APN1010 11-bit APN1007, APN1012, APN1013, APN1015, APN1016, 4/00A CR10-101J-T colpitts oscillator using 741 Colpitts VCO design APN1010 varactor diode for Colpitts oscillator kyocera sot 23-5 Tuner Applications APN1006 meander-line VCO circuit diagram 1.2 ghz tuner

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan
    PDF OT-23) NE68018

    HE 85500

    Abstract: st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 fr 3709 z E 13009 L
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW CO ST • SM A LL AND ULTRA SM ALL SIZE PACKAGES • LOW VO LTA G E/LO W CU R R EN T OPERATION • HIGH GAIN BANDW IDTH PRODUCT: fT o f 12 GHz • NO ISE FIG UR ES O F 1.5 dB AT 2.0 GHZ


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    PDF NE685 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 HE 85500 st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 fr 3709 z E 13009 L