Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON MT5LC1001 1 MEG X 1 SRAM SlMICCNDUÍTO* IN C I SRAM 1 MEG X 1 SRAM LOW VOLTAGE PIN ASSIGNMENT Top View • AU I / O pins are 5V tolerant • High speed: 1 5 ,1 7 ,2 0 and 25ns • High-perform ance, low-power, CM OS double-metal process
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MT5LC1001
28-Pin
bill54e
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E1115
Abstract: No abstract text available
Text: MICRON SE MICONDUCTOR INC b?E D BB fe1115 4'ì OOOTHSfl STT tB MRN ADVANCE MT5LC1001 1 MEG X 1 SRAM M IC R O N SRAM 1 MEG X 1 SRAM LOW VOLTAGE • All I /O pins are 5V tolerant • High speed: 15,17,20,25, 35 and 45ns • High-performance, low-power, CMOS double-metal
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e1115
MT5LC1001
28-Pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT5LC1001 1 MEG X 1 SRAM M IC R O N 1 MEG X 1 SRAM LOW VOLTAGE FEATURES • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3 power supply • Easy memory expansion with CE option • All inputs and output are TTL compatible
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MT5LC1001
28-Pin
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S18A
Abstract: No abstract text available
Text: MICRO N S E M I C O N D U C T O R INC b'lE T> m b l U S H 6 O D O T T l ? SIB • MRN AVAILABLE AUGUST 94 MICRON I S18A 1 MEG SRAM DIE SEMICONDUCTOR INC SRAM DIE 1 MEG SRAM 1 Meg X 1, 256K x 4 and 128K x 8 FEATURES DIE OUTLINE Top View) • • • • High speed: 12,15 and 20ns
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150mm
210x5
334x12
135x135
S18A
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201A3
Abstract: No abstract text available
Text: ADVANCE M T5LC 1001 1 MEG X 1 SRAM |U|IC=RON SRAM 1 MEGx 1 SRAM LOW VOLTAGE • All I/O pins are 5V tolerant • High speed: 15,17,20, 25, 35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3 power supply • Easy memory expansion with CE option
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28-Pin
T5LC1001
MT5LC1001
201A3
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RC145
Abstract: No abstract text available
Text: PRELIMINARY M T 5 L C 1 001 1 MEG X 1 SRAM I^ IIC R O N SRAM 1 MEG X 1 SRAM LOW VOLTAGE • All I / O pins are 5V tolerant • High speed: 1 5 ,1 7 ,2 0 and 25ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3 power supply
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28-Pin
RC145
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