MT41LC256K32D4
Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
Text: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏
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MT4LC4M4G6
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4M4G6 4 MEG x 4 BURST EDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, program m ed by executing WCBR cycle after initialization • Single pow er supply: +3.3V ±5% • All inputs a n d o u tp u ts are LVTTL com patible w ith 5V
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048-cycle
24/26-Pin
MT4LC4M4G6
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tc 97101
Abstract: D472
Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out
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MT9LD272
MT18LD472
168-pin,
048-cycle
T18LCW
tc 97101
D472
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MT4LC4M4G6
Abstract: No abstract text available
Text: I TECHNOLOGY. INC. DRAM 4 MEG x 4 3.3V, BURST E D O FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single +3.3V ±5% power supply • All inputs and outputs are LVTTL-compatible with 5V
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048-cycle
24/26-Pin
00131ti4
MT4LC4M4G6
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MT4LC4M4G6
Abstract: No abstract text available
Text: ADVANCE M IC n a iS I I MT4LD T 164A B, MT8LD264A B, MT16LD464A B 1,2, 4 MEG X 64 BURST EDO DRAM MODULES 1, 2, 4 MEG X 64 BURST EDO DRAM MODULE 8, 16, 32 MEGABYTE, 3.3V, NONBUFFERED, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (DIMM)
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MT8LD264A
MT16LD464A
168-Pin
168-pin,
024-cycle
048-cycle
MT8LD264AB.
MT4LC4M4G6
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MT4LC4M4G6
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4IW4GS 4 M EG x4 BURSTEDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V
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048-cycle
26-Pin
000xBwhere
MT4LC4M4G6
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Untitled
Abstract: No abstract text available
Text: M T4LC 4M 4G 6 4 MEG x 4 B U RST EDO DRAM DRAM 4 MEG x 4 3.3V, BURST EDO FEATURES • • • • • • • • OPTIONS 24/26-Pin SOJ D A -2 DJ • R e fresh S ta n d a r d (2,048 c y c le s at 3 2 m s) N one P art N u m b e r E x a m p le : M T 4 L C 4 M 4 G 6 D J-5 2
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048-cycle
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T41C
Abstract: T41C-4M
Text: PRELIMINARY H/rT4LC4M4Gtff S M BK jc* BURST EDO DRAWT BURST EDO DRAM FEATURES • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V
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048-cycle
26-Pin
000xB
A8-A10
000x8
T41C
T41C-4M
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