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    BDY92 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY92 Central Semiconductor Power Transistors Original PDF
    BDY92 Philips Semiconductors Silicon Diffused Power Transistors Original PDF
    BDY92 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=70 Original PDF
    BDY92 Central Semiconductor TO-3 Case Power Transistors Scan PDF
    BDY92 Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF
    BDY92 General Electric High-speed silicon N-P-N planar transistor. 80V, 40W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=70 Scan PDF
    BDY92 Mullard Quick Reference Guide 1977/78 Scan PDF
    BDY92 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDY92 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY92 Unknown Transistor Replacements Scan PDF
    BDY92 Unknown Transistor Replacements Scan PDF
    BDY92 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY92 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY92 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY92 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY92 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY92 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY92 Unknown Shortform Electronic Component Datasheets Short Form PDF

    BDY92 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BDY92

    Abstract: No abstract text available
    Text: BDY92 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    BDY92 O204AA) 31-Jul-02 BDY92 PDF

    Untitled

    Abstract: No abstract text available
    Text: J.E.I±£U ^zmi-L-onaLictoi Lpioaucti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY92 Silicon NPN Power Transistor DESCRIPTION • High DC Current Gain: h FE =30-120@l c =5A • Excellent Safe Operating Area


    Original
    BDY92 PDF

    BDY92

    Abstract: No abstract text available
    Text: BDY92 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    BDY92 O204AA) 18-Jun-02 BDY92 PDF

    BDY92

    Abstract: No abstract text available
    Text: BDY92 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    BDY92 O204AA) 16-Jul-02 BDY92 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    BDY90

    Abstract: BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
    Text: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15


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    2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C BDY90 BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C PDF

    Untitled

    Abstract: No abstract text available
    Text: BDY90 BDY91 BDY92 bb53T31 0020037 2 N AHER PHILIPS/DISCRETE J 25E D r - 3 3 - a SILIC O N D IFFU SED PO W ER T R A N SIST O R S High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, switching regulators and switching control amplifiers.


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    BDY90 BDY91 BDY92 bb53T31 PDF

    BDY92

    Abstract: BDY91 BDY90 9946 BDV91 IEC134 TO3 philips
    Text: N A M E R {3 ^ 5 3 1 3 1 P H I L I P S / D Q 2 I S Q C 3 7 Q R E T BDY90 BDY91 BDY92 2 5 E 5 E J D y T - 3 3 -ÍH SILICON DIFFUSED POWER TRANSISTORS High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, • switching regulators and switching control amplifiers.


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    0Q20037 BDY90 BDY91 BDY92 r-33-iH BDY90 BDV91 BDY92 BDY91 9946 IEC134 TO3 philips PDF

    BDY92

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON ^ 7# 5 BDY90/1/2 HIGH CURRENT, HIGH SPEED TRANSISTORS D E S C R IP T IO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case intended for use in switching and linear appli­ cations in military and industrial equipment.


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    BDY90/1/2 BDY90, BDY91, BDY92 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ • 7*^ 537 ODEflMfl? 3 ■ . H 7 3 3 - U _ SGS-THOMSON ij^O g^(ô [liL[l(gïï[Hj lj«a©i_ BDY90/1/2 SG S-THOMSON 3QE » HIGH CURRENT, HIGH SPEED TRANSISTORS DESCRIPTIO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal


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    BDY90/1/2 BDY90, BDY91, BDY92 BDY91 BDY92 300ns, PDF

    BDY92

    Abstract: 1117 ADC Gain bandwidth BDY90 BDY90 BDY91
    Text: 01 3875081 G E S OL ID DE 1 3fl7S0fll 0G17S71 3 STATE Pro Electron Pow er Transistors .— 0 IE 17571' D T~ 2?~f - » 6DY90, BDY91, BDY92


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    3fl750fll QD17S71 BDY91, BDY92 02CS-275I6 RCA-BDY90, 92CS-33605 D017S74 1117 ADC Gain bandwidth BDY90 BDY90 BDY91 PDF

    Untitled

    Abstract: No abstract text available
    Text: " P - 3 3 BDY90, BDY91, BDY92 HA RR IS S E M I C O N D S E C T O R — I I File Num ber SbE D High-Speed Silicon N-P-N Planar Transistors 1289 M 3 D 2 27 1 D G M G 7 1 0 21b • H A S TERMINAL DESIGNATIONS Devices for Switching and Amplifier Circuits in Industrial and Commercial


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    BDY90, BDY91, BDY92 92CS-27516 O-204AA RCA-BDY90, BDY92 PDF

    BDY90

    Abstract: No abstract text available
    Text: BDY90, BDY91, BDY92 F ile N u m b e r High-Speed Silicon N-P-N Planar Transistors 1289 TERM INAL DESIGNATIONS Devices fo r S w itchin g and A m plifier C ircuits in Industrial and C o m m erc ial A p p licatio n s Features: 92CS-27516 • M a x im u m o p e r a tin g a re a c u rv e s


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    BDY90, BDY91, BDY92 92CS-27516 BDY90 PDF

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


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    0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    BDV56

    Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
    Text: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”


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    2N2218 2N2218A 2N2219 2N2219A 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 BDV56 BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    buw34

    Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0


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    2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C buw34 BUW35 2N6675 BU208A buw44 bdx85 BU208 BUX80 2N6674 PDF

    BDW52

    Abstract: BDY90 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C BDW52A BDW52B
    Text: Power Transistors TO-3 Case Continued TYPE NO. *C (A) NPN PNP Pd (W) MAX BVc b O BV c e O @lc hFE *TYP v CE(SAT) @ lc *r *TYP (A) (A) (MHZ) (V) (V) MIN MIN MIN MAX 8.0 20 . 5.0 15 15 00 MIN MAX 2N6674 15 175 350 300 2N6675 15 175 450 400 8.0 20 . 5.0


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    2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C BDY90 2N6674 2N6675 PDF

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


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    BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF