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    BCR108W Price and Stock

    Rochester Electronics LLC BCR108WH6433XTMA1

    TRANS PREBIAS NPN 50V SOT323
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    DigiKey BCR108WH6433XTMA1 Bulk 200,000 6,571
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    Rochester Electronics LLC BCR108WH6327XTSA1

    TRANS PREBIAS NPN 50V SOT323
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    DigiKey BCR108WH6327XTSA1 Bulk 69,000 6,571
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    Infineon Technologies AG BCR108WH6433XTMA1

    TRANS PREBIAS NPN 50V SOT323
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    DigiKey BCR108WH6433XTMA1 Reel 40,000
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    Avnet Americas BCR108WH6433XTMA1 Reel 4 Weeks 7,912
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    Rochester Electronics BCR108WH6433XTMA1 40,000 1
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    Infineon Technologies AG BCR108WH6327XTSA1

    TRANS PREBIAS NPN 50V SOT323
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    DigiKey BCR108WH6327XTSA1 Reel 36,000
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    BCR108WH6327XTSA1 Reel 4 Weeks 7,912
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    Mouser Electronics BCR108WH6327XTSA1
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    Rochester Electronics BCR108WH6327XTSA1 69,000 1
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    Chip1Stop BCR108WH6327XTSA1 21,000
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    EBV Elektronik BCR108WH6327XTSA1 27,000 5 Weeks 3,000
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    New Advantage Corporation BCR108WH6327XTSA1 21,000 1
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    Win Source Electronics BCR108WH6327XTSA1 28,000
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    Infineon Technologies AG BCR108WE6327BTSA1

    TRANS PREBIAS NPN 50V SOT323
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    BCR108W Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCR108W Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR108W Infineon Technologies Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V Original PDF
    BCR108W Infineon Technologies R1=2.2 k ? R2=47 k ? Original PDF
    BCR108W Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-323 Original PDF
    BCR108W Infineon Technologies Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 2.2 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; Original PDF
    BCR108W Siemens NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) Original PDF
    BCR108W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BCR108WE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 Original PDF
    BCR108WE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-323 T/R Original PDF
    BCR108WE6327 Infineon Technologies Digital Transistors - R1=2.2 kOhm, R2=47 kOhm Original PDF
    BCR108WE6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 Original PDF
    BCR108WH6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 Original PDF
    BCR108WH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 Original PDF
    BCR108WH6433 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 Original PDF
    BCR108WH6433XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 Original PDF

    BCR108W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCR108W

    Abstract: VSO05561
    Text: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR108W VSO05561 EHA07184 OT323 Nov-29-2001 BCR108W VSO05561

    BCR108W

    Abstract: VSO05561
    Text: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR108W VSO05561 EHA07184 OT323 Jul-16-2001 BCR108W VSO05561

    bav99

    Abstract: BAV-99S-E6327 bav99 infineon
    Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W


    Original     		PDF BAV99. BAV99S BAV99 BAV99W BAV99U BAV99U BAV-99S-E6327 bav99 infineon

    Untitled

    Abstract: No abstract text available
    Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see


    Original     		PDF BCR141. BCR141S BCR141S: BCR141 BCR141W EHA07184 EHA07174 BCR141S

    BAS16

    Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
    Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U


    Original     		PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W

    marking code INFINEON

    Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


    Original     		PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W marking code INFINEON BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W

    Untitled

    Abstract: No abstract text available
    Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L


    Original     		PDF BAS40. /BAS140W Q1011) BAS140W BAS40-02L BAS40 BAS40-04 BAS40-05 BAS40-05W BAS40-06

    BAT15-02LRH

    Abstract: BAT15-04W BAT15 BAT15-03W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R RF schottky diode
    Text: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W


    Original     		PDF BAT15. BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R BAT15-02LRH BAT15-04W BAT15 BAT15-03W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R RF schottky diode

    bc817

    Abstract: No abstract text available
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		PDF BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W OT323 BC817-40 BC817-40W bc817

    BCR108W

    Abstract: BCR142 BCR142F BCR142W BCW66
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR142/W BCR142F C 3 R1 R2


    Original     		PDF BCR142. BCR142/W BCR142F EHA07184 BCR142 BCR142W OT323 BCR108W BCR142 BCR142F BCR142W BCW66

    marking code MS SOT323

    Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860

    BAS125

    Abstract: BAS125-04W BAS125-05W BAS125-06W BAS125-07W MARKING 14S
    Text: BAS125. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BAS125. BAS125-04W BAS125-05W BAS125-06W BAS125-07W OT323 BAS125 BAS125-04W BAS125-05W BAS125-06W BAS125-07W MARKING 14S

    BCR133

    Abstract: infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR133. BCR133S: BCR133/W BCR133S EHA07184 EHA07174 BCR133 OT363 BCR133 infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking

    BCR135

    Abstract: BCR108W BCR135F BCR135S BCR135W BCW66
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		PDF BCR135. BCR135S: BCR135/F BCR135W BCR135S EHA07184 EHA07174 BCR135 BCR135F BCR135 BCR108W BCR135F BCR135S BCR135W BCW66

    BAS170W

    Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
    Text: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)


    Original     		PDF BAS70. /BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BCR108W BFS17W
    Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free RoHS compliant 3 2 1 package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFS17W OT323 RF NPN POWER TRANSISTOR C 10-12 GHZ BCR108W BFS17W

    Untitled

    Abstract: No abstract text available
    Text: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see


    Original     		PDF BCR119. BCR119S: BCR119/F/W BCR119S EHA07264 EHA07265 BCR119 BCR119F

    Untitled

    Abstract: No abstract text available
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR142 BCR142W C 3 R1 R2 1 B


    Original     		PDF BCR142. BCR142 BCR142W EHA07184 OT323

    Untitled

    Abstract: No abstract text available
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		PDF BCR135. BCR135S: BCR135/F BCR135W BCR135S EHA07184 EHA07174 BCR135 BCR135F

    bav99

    Abstract: A7s SOT23 SOT-23 marking A7s
    Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W


    Original     		PDF BAV99. BAV99S BAV99 BAV99W BAV99S BAV99U bav99 A7s SOT23 SOT-23 marking A7s

    Untitled

    Abstract: No abstract text available
    Text: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2 =47 kΩ • BCR148S: Two internally isolated transistors with good matching in one multichip package • BCR148S: For orientation in reel see


    Original     		PDF BCR148. BCR148S: BCR148 BCR148W BCR148S EHA07184 EHA07174

    Untitled

    Abstract: No abstract text available
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2 =47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		PDF BCR135. BCR135S: BCR135 BCR135W BCR135S EHA07184 EHA07174

    BCR553

    Abstract: BCR108W sot323 BCR133 SOT-23 cimax
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics TA=25°C Case j. /x VCEO V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W


    OCR Scan     		PDF 10mA/5V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR553 BCR108W sot323 SOT-23 cimax