BCR141S |
|
Infineon Technologies
|
NPN Silicon Digital Transistor Array |
|
Original |
PDF
|
BCR141S |
|
Infineon Technologies
|
Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 22.0 kOhm; R2: 22.0 k?; hFE (min): 50.0; Vi (on) (min): 1.0 2mA / 0.3V; |
|
Original |
PDF
|
BCR141S |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
|
Original |
PDF
|
BCR141S |
|
Siemens
|
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface, driver circuit) |
|
Original |
PDF
|
BCR141SE6327 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
|
Original |
PDF
|
BCR141SE6327BTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
|
Original |
PDF
|
BCR141SE6727 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
|
Original |
PDF
|
BCR 141S E6727 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
|
Original |
PDF
|
BCR141SH6327 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
|
Original |
PDF
|
BCR141SH6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
|
Original |
PDF
|
BCR141SH6727 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
|
Original |
PDF
|
BCR 141S H6727 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
|
Original |
PDF
|