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    BCR112 Price and Stock

    Infineon Technologies AG BCR112E6327HTSA1

    TRANS PREBIAS NPN 50V SOT23
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    DigiKey BCR112E6327HTSA1 Reel 78,000 3,000
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    BCR112E6327HTSA1 Cut Tape 3,177 1
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    BCR112E6327HTSA1 Digi-Reel 1
    • 1 $0.36
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    Avnet Americas BCR112E6327HTSA1 Reel 4 Weeks 39,000
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    Mouser Electronics BCR112E6327HTSA1 25,557
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    Verical BCR112E6327HTSA1 246,000 3,000
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    BCR112E6327HTSA1 18,000 3,000
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    Arrow Electronics BCR112E6327HTSA1 246,000 4 Weeks 3,000
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    BCR112E6327HTSA1 18,000 4 Weeks 3,000
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    BCR112E6327HTSA1 Cut Strips 113 4 Weeks 1
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    Bristol Electronics BCR112E6327HTSA1 2,475 23
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    BCR112E6327HTSA1 3,000
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    Quest Components BCR112E6327HTSA1 1,980
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    BCR112E6327HTSA1 2,400
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    TME BCR112E6327HTSA1 5,260 25
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    Infineon Technologies AG BCR 112T E6327

    TRANS PREBIAS NPN 50V 0.1A SC75
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    DigiKey BCR 112T E6327 Reel 15,000
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    Infineon Technologies AG BCR 112F E6327

    TRANS PREBIAS NPN 50V TSFP-3
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    DigiKey BCR 112F E6327 Reel 39,000
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    Infineon Technologies AG BCR 112L3 E6327

    TRANS PREBIAS NPN 50V TSLP-3
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    DigiKey BCR 112L3 E6327 Reel 30,000
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    Infineon Technologies AG BCR112WE6327BTSA1

    TRANS PREBIAS NPN 50V SOT323
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    BCR112 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BCR112 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 Original PDF
    BCR112 Infineon Technologies R1=4.7 k ? R2=4.7 k ? Original PDF
    BCR112 Infineon Technologies Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 4.7 kOhm; R2: 4.7 k?; hFE (min): 20.0; Vi (on) (min): 1.0 2mA / 0.3V; Original PDF
    BCR112 Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR112 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BCR112 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BCR112 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BCR112E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original PDF
    BCR112E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN DGTL AF SOT-23 Original PDF
    BCR112E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 0.2W SOT23-3 Original PDF
    BCR112F Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR112FE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R Original PDF
    BCR112FE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 Original PDF
    BCR 112F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 Original PDF
    BCR112L3 Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR112L3E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSLP-3-4 T/R Original PDF
    BCR112L3E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSLP-3 Original PDF
    BCR 112L3 E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSLP-3 Original PDF
    BCR112T Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR112TE6327 Infineon Technologies Digital Transistors - R1=4.7 kOhm, R2=4.7 kOhm Original PDF

    BCR112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCR112W

    Abstract: VSO05561
    Text: BCR112W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323


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    PDF BCR112W VSO05561 EHA07184 OT323 Nov-29-2001 BCR112W VSO05561

    BCR112W

    Abstract: VSO05561 WFs transistor
    Text: BCR112W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323


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    PDF BCR112W VSO05561 EHA07184 OT323 Jul-16-2001 BCR112W VSO05561 WFs transistor

    WFs transistor

    Abstract: WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


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    PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W

    WFs transistor

    Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


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    PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23

    Untitled

    Abstract: No abstract text available
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see


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    PDF BCR112. BCR112U: BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F

    BCR112

    Abstract: No abstract text available
    Text: BCR112 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23


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    PDF BCR112 VPS05161 EHA07184 Jul-16-2001 BCR112

    BCR112

    Abstract: No abstract text available
    Text: BCR112 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23


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    PDF BCR112 VPS05161 EHA07184 Nov-29-2001 BCR112

    BCR108W

    Abstract: BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see


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    PDF BCR112. BCR112U: BCR112/F BCR112W EHA07184 BCR112 BCR112F OT323 BCR108W BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23

    WFs transistor

    Abstract: WFs SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


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    PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23

    WFs transistor

    Abstract: No abstract text available
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1


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    PDF BCR112. BCR112 BCR112W EHA07184 OT323 dissipationBCR112, BCR112W, 2011-0components WFs transistor

    Untitled

    Abstract: No abstract text available
    Text: &*< :// 5HFHLYH 'RZQFRQYHUWHU ,& IRU *+] • Fully Integrated Two-Stage Preamplifier, Mixer, LO-Buffer, IF Amplifier and two Switched Attenuators • Very high Input-IP3 of typical +5 dBm at max. gain and +28 dBm at min. gain • • • • • Very low LO-Power demand of typ. -5 to 0 dBm


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    PDF QS9000 ISO9001

    smd marking gc

    Abstract: smd marking code vd T1006 Q62702-G98 CGY 8 pin rxic
    Text: GaAs MMIC CGY 360 Data Sheet • • • • • • • • WLL receive downconverter IC for 3.5 GHz Fully Integrated Two-Stage Preamplifier, Mixer, LO-Buffer, IF Amplifier and two Switched Attenuators Very high Input-IP3 of typical + 5 dBm at max. gain and + 28 dBm at min. gain


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    PDF MW-16 Q62702-G98 EHT08785 GPW05969 smd marking gc smd marking code vd T1006 Q62702-G98 CGY 8 pin rxic

    74XX32

    Abstract: transistor B c167 p61 smd transistor SAC-C167 C1167 transistor c167 smd transistor P63 SABC16X 74HC32 BCR112
    Text:


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    PDF C16x-Family 74XX32 transistor B c167 p61 smd transistor SAC-C167 C1167 transistor c167 smd transistor P63 SABC16X 74HC32 BCR112

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    w 3425 nf

    Abstract: smd code book BCR112 3425 nf smd marking code vd Q62702-G82 SMD MARKING CODE L6 smd marking AB 6 PIN smd marking code book MW-16
    Text: GaAs MMIC CGY 353 Data Sheet • • • • • 3-stage power amplifier for 3.5 GHz applications Linear Output power 31 dBm Gain of 21 dB typ. Operating voltage 7 V typ. Unconditionally stable MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF MW-16 Q62702-G82 BCR112 EHT08776 GPW05969 w 3425 nf smd code book BCR112 3425 nf smd marking code vd Q62702-G82 SMD MARKING CODE L6 smd marking AB 6 PIN smd marking code book MW-16

    74LX1G125

    Abstract: BCR112 F525L SD10 STW8009 SD524
    Text: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of STMicroelectronics have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - STMicroelectronics NV is replaced with ST-NXP Wireless.


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    PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    BFP620F

    Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
    Text: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for


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    PDF SC-75 SC-75) B114-H7900-X-X-7600 BFP620F TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


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    PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    BCR553

    Abstract: BCR108W sot323 BCR133 SOT-23 cimax
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics TA=25°C Case j. /x VCEO V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W


    OCR Scan
    PDF 10mA/5V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR553 BCR108W sot323 SOT-23 cimax

    Untitled

    Abstract: No abstract text available
    Text: CGY360 W L L R e ceive D o w n c o n v e rte r 1C fo r 3 .5G H z • Fully Integrated Two-Stage Preamplifier, Mixer, LO-Buffer, IF Amplifier and two Switched Attenuators • Very high lnput-IP3 of typical +5 dBm at max. gain and +28 dBm at min. gain • Very low LO-Power demand of typ. -5 to 0 dBm


    OCR Scan
    PDF CGY360 MW-16 S9000 IS09001