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    BCR108 Price and Stock

    Rochester Electronics LLC BCR108WH6433XTMA1

    TRANS PREBIAS NPN 50V SOT323
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    DigiKey BCR108WH6433XTMA1 Bulk 200,000 6,571
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    Infineon Technologies AG BCR108E6327HTSA1

    TRANS PREBIAS NPN 50V SOT23
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    DigiKey BCR108E6327HTSA1 Reel 75,000 3,000
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    BCR108E6327HTSA1 Cut Tape 286 1
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    BCR108E6327HTSA1 Digi-Reel 1
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    Avnet Americas BCR108E6327HTSA1 Reel 4 Weeks 39,000
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    Mouser Electronics BCR108E6327HTSA1 103,192
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    Verical BCR108E6327HTSA1 78,000 39,000
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    Infineon Technologies AG BCR 108 B6327

    TRANS PREBIAS NPN 50V SOT23
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    DigiKey BCR 108 B6327 Reel 30,000
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    Infineon Technologies AG BCR 108T E6327

    TRANS PREBIAS NPN 50V 0.1A SC75
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    Infineon Technologies AG BCR 108L3 E6327

    TRANS PREBIAS NPN 50V TSLP-3
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    DigiKey BCR 108L3 E6327 Reel 30,000
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    Find more BCR108 price and stock on Findchips.com

    BCR108 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BCR108 Infineon Technologies Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V Original PDF
    BCR108 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 Original PDF
    BCR108 Infineon Technologies R1=2.2 k ? R2=47k ? Original PDF
    BCR108 Infineon Technologies Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 2.2 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; Original PDF
    BCR108 Siemens NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit Original PDF
    BCR108 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BCR108 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BCR108 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BCR108B6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 Original PDF
    BCR108B6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R Original PDF
    BCR 108 B6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3 Original PDF
    BCR108E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 Original PDF
    BCR108E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original PDF
    BCR108E6327 Infineon Technologies Digital Transistors - R1=2.2 kOhm, R2=47kOhm Original PDF
    BCR108E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 0.2W SOT23-3 Original PDF
    BCR108E6359 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R Original PDF
    BCR108E6433 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 Original PDF
    BCR 108E6433 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original PDF
    BCR108E6433 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R Original PDF
    BCR108E6433HTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3 Original PDF

    BCR108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCR108W

    Abstract: VSO05561
    Text: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR108W VSO05561 EHA07184 OT323 Nov-29-2001 BCR108W VSO05561

    BCR108W

    Abstract: VSO05561
    Text: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR108W VSO05561 EHA07184 OT323 Jul-16-2001 BCR108W VSO05561

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S SEMH10
    Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10

    BCR108

    Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108S BCR108W BCW66 bcr1

    marking WHs

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174 BCR108S marking WHs

    BCR108S

    Abstract: VPS05604
    Text: BCR108S NPN Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604


    Original     		PDF BCR108S VPS05604 EHA07174 OT363 Nov-29-2001 BCR108S VPS05604

    marking WHS sot23

    Abstract: transistor marking code whs
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3


    Original     		PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108L3 marking WHS sot23 transistor marking code whs

    BCR108

    Abstract: EHA07184
    Text: BCR108 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR108 WHs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR108 VPS05161 EHA07184 Nov-29-2001 BCR108 EHA07184

    BCR108T

    Abstract: SC75
    Text: BCR108T NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR108T WHs Pin Configuration 1=B 2=E Package 3=C SC75


    Original     		PDF BCR108T VPS05996 EHA07184 Jul-16-2001 BCR108T SC75

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F

    BCR108S

    Abstract: VPS05604
    Text: BCR108S NPN Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604


    Original     		PDF BCR108S VPS05604 EHA07174 OT363 Jul-12-2001 BCR108S VPS05604

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S SEMH10
    Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W

    BCR108

    Abstract: No abstract text available
    Text: BCR108 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR108 WHs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR108 VPS05161 EHA07184 Jul-16-2001 BCR108

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. BCR108/F/L3 BCR108T/W BCR108S EHA07174 EHA07184 BCR108 BCR108F BCR108L3 BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1

    bav99

    Abstract: BAV-99S-E6327 bav99 infineon
    Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W


    Original     		PDF BAV99. BAV99S BAV99 BAV99W BAV99U BAV99U BAV-99S-E6327 bav99 infineon

    sot23 s1a marking

    Abstract: marking code S1A sot23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23

    Untitled

    Abstract: No abstract text available
    Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see


    Original     		PDF BCR141. BCR141S BCR141S: BCR141 BCR141W EHA07184 EHA07174 BCR141S

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S

    BAS16

    Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
    Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U


    Original     		PDF BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W

    marking code INFINEON

    Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


    Original     		PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W marking code INFINEON BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W

    BCR553

    Abstract: BCR108W sot323 BCR133 SOT-23 cimax
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics TA=25°C Case j. /x VCEO V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W


    OCR Scan     		PDF 10mA/5V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR553 BCR108W sot323 SOT-23 cimax

    Sot-363 whs

    Abstract: marking code WHs
    Text: SIEMENS BCR108S NPN Silicon D igital Transistor Array • Switching circuit, inverter, interface circuit, 4 5_ _ driver circuit • Two galvanic internal isolated Transistors in on package » Built in bias resistor (R1=2.2kß, R2=47k£i) 3 2 1 BCR108S WHs


    OCR Scan     		PDF BCR108S VPS05604 Q62702-C2414 OT-363 Sot-363 whs marking code WHs