MMC-SD-SDDMF-0095B-KINGFONT
Abstract: TFT-G240320LTSW-118W-E BD557 1376408-1 MINI_USB-AB p231d X192 J4G3 MINI-USB-AB Kingfont
Text: GND 2k RESET_IN V3A VREF P0.10-TXD2 P0.12-PORT-PWR-B P0.18-MOSI P0.22 P0.26-AOUT P1.3-MCICMD P1.11-MCIDAT2 P1.19 P1.23-LCDVD13 BDQM1 BCAS BBLS1 BWE BA23 BA21 BA19 BA17 P3.31-BD31 P3.29-PWM1.6-BD29 P3.27-PWM1.4-BD27 P3.25-PWM1.2-BD25 P3.23-BD23 P3.21-DTR1-BD21
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1N4148
22uF/10V
33F/5
FDV303N
10-EINT0
11-LCDCLKIN
8-LCDVD16
28-SCL-A-LCDVD22
29-SDA-A-LCDVD23
15-SCK
MMC-SD-SDDMF-0095B-KINGFONT
TFT-G240320LTSW-118W-E
BD557
1376408-1
MINI_USB-AB
p231d
X192
J4G3
MINI-USB-AB
Kingfont
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Untitled
Abstract: No abstract text available
Text: WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SDRAM: 100 MHz The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in a
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WED9LAPC2B16P8BC
LUCTAPC640
WED9LAPC2B16P8BC
WED9LAPC2B16P8BI
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M39P0R1080E4
Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD
Text: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)
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M39P0R9080E4
M39P0R1080E4
TFBGA165
64-bit
M39P0R1080E4
M39P0R9080E4
M58PR001LE
M58PR512LE
M39P0R09080E4
BCAS SD
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TAPC640
Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC
Text: WED9LAPC2B16P8BC 4M x 32 SDR AM / 2M x 8 SDR AM SDRAM SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TTAPC640 APC640 A TM PORT CONTROLLER ATM DESCRIPTION FEATURES n Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in
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WED9LAPC2B16P8BC
TAPC640
WED9LAPC2B16P8BC
WED9LAPC2C16V4BC,
APC2B16P8BC
WED9LAPC2C16V4BC
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QE R549
Abstract: qe r542 QE R745 Qe R532 qe R610 QE R528 QE R732 EV-64120 QE R552 LEVEL1-LXT970
Text: EV-48004A-24 Evaluation Board for the GT-48004A Preliminary Revision 1.0ip 4/13/98 http://www.galileoT.com info@galileoT.com Tel 408 367-1400 Fax (408)367-1401 EV-48004A-24 Evaluation Board for the GT-48004A 1. Introduction The EV-48004A-24 Evaluation Board for the GT-48004A implements a 24-port 10/100 Ethernet switch in a formfactor
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EV-48004A-24
GT-48004A
EV-48004A-24
GT-48004A
24-port
100Mbps
QE R549
qe r542
QE R745
Qe R532
qe R610
QE R528
QE R732
EV-64120
QE R552
LEVEL1-LXT970
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Untitled
Abstract: No abstract text available
Text: 128MB, 256MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb F-die with 72-bit ECC Revision 1.0 January. 2004 Rev. 1.0 January. 2004 128MB, 256MB Registered DIMM SDRAM Revision History Revision 0.0 December, 2003 - First release
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128MB,
256MB
168pin
128Mb
72-bit
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TAPC640
Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC b-cas 153 tss
Text: White Electronic Designs WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged
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WED9LAPC2B16P8BC
TAPC640
WED9LAPC2B16P8BC
WED9LAPC2C16V4BC,
WED9LAPC2C16P8BC
WED9LAPC2C16P8BI
WED9LAPC2C16V4BC
b-cas
153 tss
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K4S280432E
Abstract: M390S1723ET1-C7A M390S1723ETU-C7A M390S3320ET1-C7A M390S3320ETU-C7A M390S3323ET1-C7A
Text: 128MB, 256MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb E-die with 72-bit ECC Revision 1.3 February. 2004 Rev. 1.3 February. 2004 128MB, 256MB Registered DIMM SDRAM Revision History Revision 1.0 November, 2002 - First release
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128MB,
256MB
168pin
128Mb
72-bit
K4S280432E
M390S1723ET1-C7A
M390S1723ETU-C7A
M390S3320ET1-C7A
M390S3320ETU-C7A
M390S3323ET1-C7A
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B1A12
Abstract: No abstract text available
Text: 128MB, 256MB Registered DIMM Preliminary SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb F-die with 72-bit ECC Revision 0.0 December. 2003 Rev. 0.0 December. 2003 128MB, 256MB Registered DIMM Preliminary SDRAM Revision History Revision 0.0 December, 2003
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128MB,
256MB
168pin
128Mb
72-bit
B1A12
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Untitled
Abstract: No abstract text available
Text: 128MB, 256MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb F-die with 72-bit ECC Revision 1.3 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 May 2004 128MB, 256MB Registered DIMM
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128MB,
256MB
168pin
128Mb
72-bit
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K4S280432F
Abstract: M390S1723FT1-C7A M390S1723FTU-C7A M390S3320FT1-C7A M390S3320FTU-C7A M390S3323FT1-C7A b-cas
Text: 128MB, 256MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb F-die with 72-bit ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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128MB,
256MB
168pin
128Mb
72-bit
K4S280432F
M390S1723FT1-C7A
M390S1723FTU-C7A
M390S3320FT1-C7A
M390S3320FTU-C7A
M390S3323FT1-C7A
b-cas
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js83
Abstract: 28f040 JS98 edo dram 72-pin simms 64mb JS108 JS-105 74LS373SC JS31-JS32 JS107 BYU25
Text: 32-bit i960Jx Galileo-5 Evaluation & Development Preliminary May 96, Rev. 1.0 System NOTE: Always contact Galileo Technology for possible updates before starting a design. FEATURES • Flexible evaluation, benchmark, software, and hardware development system for the GT-32090 System
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32-bit
i960Jx
GT-32090
MON960)
i960Jx
33MHz
16MHz
66MHz
js83
28f040
JS98
edo dram 72-pin simms 64mb
JS108
JS-105
74LS373SC
JS31-JS32
JS107
BYU25
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K4S280432E
Abstract: M390S1723ET1-C7A M390S1723ETU-C7A M390S3320ET1-C7A M390S3320ETU-C7A M390S3323ET1-C7A
Text: 128MB, 256MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb E-die x4, x8 1,700 / 1,500 / 1,200mil Height & 72-bit ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 128MB, 256MB Registered DIMM SDRAM Revision History Revision 1.0 (Nov., 2002)
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128MB,
256MB
168pin
128Mb
200mil
72-bit
K4S280432E
M390S1723ET1-C7A
M390S1723ETU-C7A
M390S3320ET1-C7A
M390S3320ETU-C7A
M390S3323ET1-C7A
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D12U
Abstract: No abstract text available
Text: M377S6428MT1 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S6428MT1 PC100 Registered DIMM M377S6428MT1 SDRAM DIMM (Intel 1.0 ver. Base)
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M377S6428MT1
PC100
M377S6428MT1
64Mx72
64Mx4,
64Mx4
D12U
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M390S3253HU1
Abstract: No abstract text available
Text: 256MB, 512MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb H-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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256MB,
512MB
168pin
256Mb
64Mx4
K4S560432H
PC133
M390S3253HU1
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CDC2510A
Abstract: KMM375S6427T-GL KMM375S6427T-G0 KMM375S6427T-G8 KMM375S6427T-GH
Text: Preliminary KMM375S6427T SDRAM MODULE KMM375S6427T SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S6427T is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S6427T consists of eighteen CMOS Stacked
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KMM375S6427T
KMM375S6427T
64Mx72
64Mx4,
64Mx4
400mil
18-bits
24-pin
CDC2510A
KMM375S6427T-GL
KMM375S6427T-G0
KMM375S6427T-G8
KMM375S6427T-GH
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b1a12
Abstract: No abstract text available
Text: White Electronic Designs WV3DG72256V-AD2 PRELIMINARY 2GB – 2x128Mx72 SDRAM, REGISTERED FEATURES DESCRIPTION Burst Mode Operation Auto and Self Refresh capability LVTTL compatible inputs and outputs Serial Presence Detect with EEPROM Fully synchronous: All signals are registered on the
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2x128Mx72
WV3DG72256V-AD2
WV3DG72256V
256Mx4
128Mx4)
100MHz
133MHz
b1a12
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CDC2510A
Abstract: KMM377S3227BT1-GL MA2180
Text: SDRAM MODULE Preliminary KMM377S3227BT1 Revision History Revision 4 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. REV. 5 July 1998 Preliminary KMM377S3227BT1 SDRAM MODULE KMM377S3227BT1 SDRAM DIMM (Intel 1.0 ver. Base)
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KMM377S3227BT1
KMM377S3227BT1
32Mx72
32Mx4,
32Mx4
400mil
18-bits
CDC2510A
KMM377S3227BT1-GL
MA2180
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CDC2509
Abstract: MA2180
Text: SDRAM MODULE Preliminary KMM377S3227BT Revision History Revision .2 Jan. 1998 •DC Characteristics values are changed. : ICC2 N & ICC3 N •STANDARD TIMING DIAGRAM is changed . •All AC parameters are measured by module tap reference(refer to page#5) •CAS Latency is based on Reg. DIMM (In case of Unbuff. DIMM CAS Latency is 1 CLK earlier than this)
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KMM377S3227BT
200mA.
100Min
540Min)
250Max
35Max)
010Max
32Mx4
KM44S32037BT
CDC2509
MA2180
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N3 3kv SEC
Abstract: N10 3Kv sec N10 3Kv 74HCT595 ALED12 DLED11 EPM7128S-100 LXT970 FLED11 ELED11
Text: A B C D E MAIN-CFG JTAG&TEST PAL A[3:0] +12V -12V IntF~ IdSelF[1:0] GntF[1:0] ReqF[1:0] 25M-A[7:0] 25M-B[7:0] 25M-A[7:0] 25M-B[7:0] +12V -12V idself[1:0] gntf[1:0] reqf[1:0] intd idsele[1:0] gnte[1:0] reqe[1:0] idseld[1:0] gntd[1:0] reqd[1:0] rst~ rst clk1
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25M-A
25M-B
N3 3kv SEC
N10 3Kv sec
N10 3Kv
74HCT595
ALED12
DLED11
EPM7128S-100
LXT970
FLED11
ELED11
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WV3DG72256V-AD2
Abstract: b1a12
Text: White Electronic Designs WV3DG72256V-AD2 PRELIMINARY 2GB – 2x128Mx72 SDRAM, REGISTERED FEATURES DESCRIPTION Burst Mode Operation The WV3DG72256V is a 2x128Mx72 synchronous DRAM module which consists of eighteen 256Mx4 stack SDRAM components stacked from 128Mx4 in TSOP II package,
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WV3DG72256V-AD2
2x128Mx72
WV3DG72256V
256Mx4
128Mx4)
100MHz
133MHz
WV3DG72256V-AD2
b1a12
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CDC2510A
Abstract: KMM377S6427T1GL
Text: SDRAM MODULE Preliminary KMM377S6427T1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. REV. 4 July 1998 Preliminary KMM377S6427T1 SDRAM MODULE KMM377S6427T1 SDRAM DIMM (Intel 1.0 ver. Base)
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KMM377S6427T1
KMM377S6427T1
64Mx72
64Mx4,
64Mx4
400mil
18-bits
CDC2510A
KMM377S6427T1GL
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PC133 registered reference design
Abstract: No abstract text available
Text: M390S3320BT1 PC133 Registered DIMM Revision History Revision 0.0 Sep. 1999 • PC133 first published REV. 0 Sep. 1999 PC133 Registered DIMM M390S3320BT1 M390S3320BT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD
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M390S3320BT1
PC133
M390S3320BT1
32Mx72
32Mx4,
PC133 registered reference design
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CDC2509
Abstract: Intel 1.2 ver Base M377S3253AT3 M377S3253AT3-C1H M377S3253AT3-C1L
Text: M377S3253AT3 PC100 Registered DIMM Revision History Revision 0.0 Oct.13, 1999 Rev. 0.0 Oct.1999 PC100 Registered DIMM M377S3253AT3 M377S3253AT3 SDRAM DIMM (Intel 1.2 ver Base) 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD
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M377S3253AT3
PC100
M377S3253AT3
32Mx72
32Mx8,
32Mx8
CDC2509
Intel 1.2 ver Base
M377S3253AT3-C1H
M377S3253AT3-C1L
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