M58PR001LE Search Results

M58PR001LE Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M58PR001LE		Numonyx	512-Mbit or 1-Gbit (x 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories		Original	PDF
M58PR001LE		STMicroelectronics	256-Mbit, 512-Mbit or 1-Gbit (x 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories		Original	PDF
M58PR001LE96ZAD5		Numonyx	512-Mbit or 1-Gbit (x 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories		Original	PDF

M58PR001LE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CR10 Abstract: M58PR001LE M58PR256LE M58PR512LE a*12864 Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program	Original	M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit CR10 M58PR001LE M58PR256LE a*12864	PDF
P46H Abstract: TFBGA105 Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers	Original	M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit P46H TFBGA105	PDF
Untitled Abstract: No abstract text available Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	M58PR512LE M58PR001LE 512-Mbit 8819h	PDF
Untitled Abstract: No abstract text available Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	M58PR512LE M58PR001LE 512-Mbit M58PR512LE96ZB5	PDF
st MCP Abstract: No abstract text available Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	M58PR512LE M58PR001LE 512-Mbit M58PR001LE96Z5E M58PR001LE st MCP	PDF
TFBGA105 Abstract: CR10 M58PR001LE M58PR512LE Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program	Original	M58PR512LE M58PR001LE 512-Mbit TFBGA105 TFBGA105 CR10 M58PR001LE	PDF
M39P0R1080E4 Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD Text: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)	Original	M39P0R9080E4 M39P0R1080E4 TFBGA165 64-bit M39P0R1080E4 M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD	PDF
MX29GL256 Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes	Original	AT49SV163D 48-Pin 48-Ball S29AS016J EN29SL800 S29AS00gest MX29GL256 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D	PDF