vsb3200
Abstract: vsb320
Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b
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Original
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PDF
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TY045S200S6OT
TY054S200S6OT
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vsb3200
vsb320
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VSB2200S
Abstract: No abstract text available
Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b
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Original
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PDF
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TY045S200S6OT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VSB2200S
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vsb3200
Abstract: VSB2200S V30200C VSB3200S
Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b
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Original
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PDF
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TY045S200S6OT
TY054S200S6OT
11-Mar-11
vsb3200
VSB2200S
V30200C
VSB3200S
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MBR10100CT equivalent
Abstract: No abstract text available
Text: New Product TY.S100.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 100 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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TY045S100S6OT
TY054S100S6OT
TY066S100A6OT
TY080S100A6OU
TY080S100S6PU
TY093S100S6PU
TY093S100A6OU
TY102S100A6OU
TY102S100S6OU
TY119S100A6OV
MBR10100CT equivalent
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S3060
Abstract: No abstract text available
Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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S060A6.
TY059S060A6OT
TY078S060A6PU
TY085S060A6OU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S3060
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Untitled
Abstract: No abstract text available
Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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S080A6.
TY056S080A6OT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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death metal diagram
Abstract: No abstract text available
Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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S080A6.
TY056S080A6OT
TY073S080A6PT
TY085S080A6OU
TY102S080A6OU
11-Mar-11
death metal diagram
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MBR10100CT equivalent
Abstract: No abstract text available
Text: New Product TY.S100.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 100 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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TY045S100S6OT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
MBR10100CT equivalent
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MBR10100CT equivalent
Abstract: 277A equivalent 89216 TI ASSEMBLY CODE v30100c v80100
Text: New Product TY.S100.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 100 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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TY045S100S6OT
TY054S100S6OT
TY066S100A6OT
TY080S100A6OU
TY080S100S6PU
TY093S100S6PU
TY093S100A6OU
TY102S100A6OU
TY102S100S6OU
TY119S100A6OV
MBR10100CT equivalent
277A equivalent
89216
TI ASSEMBLY CODE
v30100c
v80100
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Untitled
Abstract: No abstract text available
Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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S060A6.
TY059S060A6OT
TY078S060A6PU
TY085S060A6OU
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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S060A6.
TY059S060A6OT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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S080A6.
TY056S080A6OT
TY073S080A6PT
TY085S080A6OU
TY102S080A6OU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
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Original
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PDF
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SX081H150A4OU
SX081H150A4OU
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
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Original
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PDF
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S150A6.
TY056S150A6OT
TY080S150A6OU
TY093S150A6OU
TY102S150A6OU
11-Mar-11
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277A
Abstract: No abstract text available
Text: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
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Original
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PDF
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TY080S120A6OU
TY080S120S6PU
TY093S120A6OU
TY102S120A6OU
TY102S120S6PU
TY119S120A6OU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
277A
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Untitled
Abstract: No abstract text available
Text: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
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Original
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PDF
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
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Original
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PDF
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SX081H150A4OU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
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Original
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PDF
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S150A6.
TY056S150A6OT
TY080S150A6OU
TY093S150A6OU
TY102S150A6OU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
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Original
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PDF
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SX081H150A4OU
SX081H150A4OU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
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Original
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PDF
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TY080S120A6OU
TY080S120S6PU
TY093S120A6OU
TY102S120A6OU
TY102S120S6PU
TY119S120A6OU
11-Mar-11
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SX050
Abstract: sx061 SX DO-214AA
Text: New Product SX.H100.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 100 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
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Original
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PDF
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SX050H100S4PT
SX061H100S4PT
SX067H100S4PT
SX093H100A4OU
SX119H100S4PU
08trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
SX050
sx061
SX DO-214AA
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SX073H060S4PT
Abstract: No abstract text available
Text: New Product SX.H060.4. Series www.vishay.com Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 60 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
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Original
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PDF
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SX073H060A4OT
SX073H060S4PT
SX110H060S4PU
SX128H060S4OV
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
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Original
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PDF
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SX073H045A4OT
SX073H045S4PT
SX085H045S4PU
SX110H045A4OU
SX110H045S4PU
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product SX.H100.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 100 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
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Original
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PDF
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SX050H100S4PT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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