277A
Abstract: No abstract text available
Text: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
|
Original
|
TY080S120A6OU
TY080S120S6PU
TY093S120A6OU
TY102S120A6OU
TY102S120S6PU
TY119S120A6OU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
277A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
|
Original
|
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
|
Original
|
TY080S120A6OU
TY080S120S6PU
TY093S120A6OU
TY102S120A6OU
TY102S120S6PU
TY119S120A6OU
11-Mar-11
|
PDF
|