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Vishay Semiconductors VSB2200S-M3/54 DIODE SCHOTTKY 200V 2A DO204AL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VSB2200S-M3/54	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Semiconductors VSB2200S-M3/73 DIODE SCHOTTKY 200V 2A DO204AL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VSB2200S-M3/73	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now

VSB2200S Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
VSB2200S-M3/54		Vishay General Semiconductor	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 200V 2A DO204AL		Original	PDF
VSB2200S-M3/73		Vishay Semiconductor Diodes Division	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 2A 200V AXIAL		Original	PDF

VSB2200S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VSB2200S Abstract: No abstract text available Text: VSB2200S www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106	Original	PDF	VSB2200S 22-B106 DO-204AL DO-41) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VSB2200S
VSB2200S Abstract: No abstract text available Text: New Product VSB2200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106	Original	PDF	VSB2200S 22-B106 DO-204AL DO-41) 2002/95/EC 2002/96/EC 11-Mar-11 VSB2200S
VSB2200S Abstract: No abstract text available Text: New Product VSB2200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106	Original	PDF	VSB2200S 22-B106 DO-204AL DO-41) 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. VSB2200S
VSB2200S Abstract: No abstract text available Text: New Product VSB2200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106	Original	PDF	VSB2200S 22-B106 DO-204AL DO-41) 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. VSB2200S
vsb3200 Abstract: vsb320 Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b	Original	PDF	TY045S200S6OT TY054S200S6OT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 vsb3200 vsb320
VSB2200S Abstract: No abstract text available Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b	Original	PDF	TY045S200S6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VSB2200S
vsb3200 Abstract: VSB2200S V30200C VSB3200S Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b	Original	PDF	TY045S200S6OT TY054S200S6OT 11-Mar-11 vsb3200 VSB2200S V30200C VSB3200S