Untitled
Abstract: No abstract text available
Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
|
Original
|
PDF
|
S150A6.
TY056S150A6OT
TY080S150A6OU
TY093S150A6OU
TY102S150A6OU
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
|
Original
|
PDF
|
S150A6.
TY056S150A6OT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)
|
Original
|
PDF
|
S150A6.
TY056S150A6OT
TY080S150A6OU
TY093S150A6OU
TY102S150A6OU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|