DIODE 20B2
Abstract: TP4213 TP2658 SHEET15 30B4 diode 37 TV samsung lcd Schematic circuit diagram TP5000 alviso-GM 30B4 BA92-03859A
Text: SAMSUNG X06 GUO LEI ZHOU JUN DRAW Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : CPU : Chip Set : Remarks : CHEN TAO CHECK KEVIN LEE APPROVAL X06 BA92-03859A BA41-00529A MP 1.0 2005-6-25 Dothan Intel Alviso + ICH6-M Internal Gfx. Aquila-So
|
Original
|
PDF
|
Sheet10.
Sheet11.
Sheet12.
Sheet13.
Sheet14.
Sheet15.
Sheet16.
Sheet17.
Sheet18.
Sheet19.
DIODE 20B2
TP4213
TP2658
SHEET15
30B4 diode
37 TV samsung lcd Schematic circuit diagram
TP5000
alviso-GM
30B4
BA92-03859A
|
transistor sr61
Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
|
Original
|
PDF
|
K5T6432YT
4Mx16)
2Mx16)
81-Ball
80x11
transistor sr61
BA107
transistor BA29
BA27 chip transistor
BA106
BA99
SAMSUNG MCP
A21-A7
transistor ba31
ba30 transistor
|
BA188
Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K8S5615ETC
256Mb
44FBGA,
no180000h-018FFFFh
0170000h-017FFFFh
0160000h-016FFFFh
0150000h-015FFFFh
0140000h-014FFFFh
0130000h-013FFFFh
0120000h-012FFFFh
BA188
BA255
BA242
BA138
BA234
BA205
BA238
BA251
BA188 co
BA213
|
k8a55
Abstract: BA251 samsung nor flash BA253 BA217 BA155 ba198
Text: Rev. 1.0, Nov. 2010 K8A56 57 ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K8A56
256Mb
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
0070000h-007FFFFh
k8a55
BA251
samsung nor flash
BA253
BA217
BA155
ba198
|
samsung nor flash
Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB
Text: NOR FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K8A6415ET
couldre17.
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
samsung nor flash
BA102
BA127 Diode
BA134
samsung nor
K8A6415EBB
|
BA99
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K8A6415ET
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
BA99
|
BA100 diode
Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance
|
Original
|
PDF
|
K5C6481NT
4Mx16)
512Kx16)
512Kx10
81-Ball
80x11
BA100 diode
BA102
ba107
Samsung MCP
BA125 Diode
diode ba102
BA134
BA100
BA106
|
BA100 diode
Abstract: BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125
Text: K5C6417YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 16M Bit (1Mx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft August 29, 2001 1.0 Revised - Changed F-Vcc Max. Value (from 3.0V to 3.3V)
|
Original
|
PDF
|
K5C6417YT
4Mx16)
1Mx16)
81-Ball
80x11
08MAX
BA100 diode
BA133 diode
diode ba102
SAMSUNG MCP
BA102 diode
BA102
bufer
BA114
BA122
BA125
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.2, Sep. 2010 K8S6815ET B D 64Mb D-die SLC NOR FLASH 7.5x5, 44FBGA, 8M Partition, x16, Muxed Burst, 8Banks 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K8S6815ET
44FBGA,
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
058000h-05FFFFh
050000h-057FFFh
048000h-04FFFFh
040000h-047FFFh
038000h-03FFFFh
|
BA260
Abstract: BA139 BA138 BA138 diode BA205 BA169 BA251 ba209 BA114 ba148
Text: K8A2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K8A2815ET
128Mb
54MHz
A0-A22
00000FH
00001FH
00002FH
000000H
BA260
BA139
BA138
BA138 diode
BA205
BA169
BA251
ba209
BA114
ba148
|
BA379
Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K8S1215ETC
K8S1215EBC
K8S1215EZC
512Mb
64FBGA,
0150000h-015FFFFh
0140000h-014FFFFh
0130000h-013FFFFh
0120000h-012FFFFh
0110000h-011FFFFh
BA379
BA506
BA438
BA508
BA306
ba473
BA431
BA356
BA471
ba258
|
BA258
Abstract: ba146 BA148 ba198 BA204
Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K8S2815ET
128Mb
00003FH
00007FH
0000BFH
000000H
44-Ball
BA258
ba146
BA148
ba198
BA204
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.0, Nov. 2010 K8A2815ET B E 128Mb E-die NOR FLASH 8M x16, Sync Burst, Page Mode, Multi Bank 1.7V to 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K8A2815ET
128Mb
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
058000h-05FFFFh
050000h-057FFFh
048000h-04FFFFh
040000h-047FFFh
038000h-03FFFFh
|
BA100 diode
Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)
|
Original
|
PDF
|
KADxx0300B
2Mx16)
69-Ball
10MAX
BA100 diode
BA115
BA116
BA961
SAMSUNG MCP
ba841
ba7 transistor
BA124
BA127
BA133 diode
|
|
|
Untitled
Abstract: No abstract text available
Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
|
Original
|
PDF
|
K8C54
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
|
BA95
Abstract: 8A0000
Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
|
Original
|
PDF
|
K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
BA95
8A0000
|
Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
|
Original
|
PDF
|
K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
|
samsung electronics ba41
Abstract: BA175
Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
samsung electronics ba41
BA175
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K8S2815ET
128Mb
44FBGA,
078000h-07FFFFh
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
058000h-05FFFFh
050000h-057FFFh
048000h-04FFFFh
|
Untitled
Abstract: No abstract text available
Text: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
|
BA961
Abstract: BA43 48FBGA samsung nor flash ba107
Text: K8D6x16UTM / K8D6x16UBM NOR FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1
|
Original
|
PDF
|
K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
48FBGA
047MAX
BA961
BA43
samsung nor flash
ba107
|
BA114
Abstract: BA107 samsung ba92 BA122
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
|
Original
|
PDF
|
K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
48FBGA
047MAX
BA114
BA107
samsung ba92
BA122
|
Untitled
Abstract: No abstract text available
Text: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K8C56
256Mb
couldr13
A0-A23
000000FH
000001FH
000002FH
0000000H
|
BA107
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
|
Original
|
PDF
|
K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
BA107
|