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    BA471 Search Results

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    BA471 Price and Stock

    Murata Manufacturing Co Ltd PRF21BA471QB5RA

    Thermistor PTC 470Ohm 50% 2-Pin 0805 Embossed T/R - Tape and Reel (Alt: PRF21BA471QB5RA)
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    Avnet Americas PRF21BA471QB5RA Reel 12 Weeks 4,000
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    Mouser Electronics PRF21BA471QB5RA 4,000
    • 1 $0.42
    • 10 $0.327
    • 100 $0.293
    • 1000 $0.226
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    Bristol Electronics PRF21BA471QB5RA 3,589
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    TTI PRF21BA471QB5RA Reel 4,000
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    Avnet Abacus PRF21BA471QB5RA 11 Weeks 4,000
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    Symmetry Electronics PRF21BA471QB5RA 1
    • 1 $0.315
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    Murata Manufacturing Co Ltd PRF18BA471QB5RB

    Thermistor PTC 470Ohm 50% 2-Pin 0603 Paper T/R - Tape and Reel (Alt: PRF18BA471QB5RB)
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    Avnet Americas PRF18BA471QB5RB Reel 12 Weeks 4,000
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    Mouser Electronics PRF18BA471QB5RB 717
    • 1 $0.25
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    • 100 $0.164
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    TTI PRF18BA471QB5RB Reel 68,000 4,000
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    Avnet Abacus PRF18BA471QB5RB 4,000 11 Weeks 4,000
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    Chip1Stop PRF18BA471QB5RB 66
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    Symmetry Electronics PRF18BA471QB5RB 1
    • 1 $0.194
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    Murata Manufacturing Co Ltd PRF18BA471QS5RB

    Thermistor PTC 470Ohm 50% 2-Pin 0603 Paper T/R - Tape and Reel (Alt: PRF18BA471QS5RB)
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    Avnet Americas PRF18BA471QS5RB Reel 12 Weeks 4,000
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    Mouser Electronics PRF18BA471QS5RB 552
    • 1 $0.3
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    • 100 $0.207
    • 1000 $0.152
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    TTI PRF18BA471QS5RB Reel 20,000 4,000
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    Avnet Abacus PRF18BA471QS5RB 11 Weeks 4,000
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    Symmetry Electronics PRF18BA471QS5RB 1
    • 1 $0.311
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    Panasonic Electronic Components EEEHBA471UAP

    Aluminum Electrolytic Capacitor, 470 uF, 10 V, ± 20%, 2000 hours @ 105°C, Radial Can - SMD - Tape and Reel (Alt: EEE-HBA471UAP)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas EEEHBA471UAP Reel 21 Weeks 500
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    RS EEEHBA471UAP Bulk 25
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    TME EEEHBA471UAP 500
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    Ameya Holding Limited EEEHBA471UAP 500
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    Avnet Abacus EEEHBA471UAP Reel 23 Weeks 2,000
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    Panasonic Electronic Components EEE-HBA471UAP

    Aluminum Electrolytic Capacitors - SMD 470UF 10V HB SMD
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    Mouser Electronics EEE-HBA471UAP
    • 1 $0.91
    • 10 $0.583
    • 100 $0.466
    • 1000 $0.331
    • 10000 $0.28
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    Newark EEE-HBA471UAP Reel 500
    • 1 $0.369
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    Master Electronics EEE-HBA471UAP
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    Find more BA471 price and stock on Findchips.com

    BA471 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---

    BA379

    Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
    Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S1215ETC K8S1215EBC K8S1215EZC 512Mb 64FBGA, 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh 0110000h-011FFFFh BA379 BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258

    BA339

    Abstract: ba406 K8F1315ETM
    Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb inh-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh BA339 ba406 K8F1315ETM

    ba508

    Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- ba508 BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329

    BA339

    Abstract: AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64
    Text: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb couldresul0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh 0070000h-007FFFFh BA339 AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64

    transistor A1624

    Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
    Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K5N1229ACD-BQ12 512Mb 128Mb transistor A1624 ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N

    BA339

    Abstract: ba379 BA489
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 ba379 BA489

    BA505

    Abstract: BA389 PIN Diode BA339 ba308 BA379 BA343 ba473 BA512 ba508 BA306
    Text: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb 0030000h-003FFFFh 0020000h-002FFFFh 0010000h-001FFFFh 000C000h-000FFFFh 0008000h-000BFFFh 0004000h-0007FFFh 0000000h-0003FFFh 00000h BA505 BA389 PIN Diode BA339 ba308 BA379 BA343 ba473 BA512 ba508 BA306

    BA425

    Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA425 BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418

    BA306

    Abstract: BA339
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA306 BA339

    varistor 10c 471

    Abstract: varistor 10f 471 R04J8 10f 471 varistor H60H63 R04J 10c 471 44 varistor pdf/25/256262
    Text: !お願い 製品によっては守らないと発煙、発火等にいたる可能性のある定格や!注意（保管・使用環境、定格上の注意、実装上の注意、取扱上の注意）を当PDFカタログに記載して おりますので必ずご覧ください。なお、当PDFカタログには、代表的な仕様のみを記載しておりますので、ご注文にあたっては詳細な仕様が記載されている納入仕様書の内容


    Original     		PDF R04J8 R04-8 51/60V 24/30/32V 56/80V 125/140V 250/265V 125/250/265V varistor 10c 471 varistor 10f 471 10f 471 varistor H60H63 R04J 10c 471 44 varistor pdf/25/256262

    BA512

    Abstract: BA389 PIN Diode BA333 ba508 BA379 BA306 BA507 BA341 BA459 BA343
    Text: K8C10 11 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification K8C10(11)INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C10 512Mb fah-007FFFFh 0060000h-006FFFFh 0050000h-005FFFFh 0040000h-004FFFFh 0030000h-003FFFFh 0020000h-002FFFFh 0010000h-001FFFFh BA512 BA389 PIN Diode BA333 ba508 BA379 BA306 BA507 BA341 BA459 BA343

    BA471

    Abstract: K8F12 BA459 BA313 BA318 BA343 BA379 BA402 BA514 BA280
    Text: Advanced Information K8F12 13 15ET(B)M Flash Memory 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8F12 512Mb 00000h 0000000h-00001FFh 64-Ball 08MAX BA471 BA459 BA313 BA318 BA343 BA379 BA402 BA514 BA280

    100uF 25V Electrolytic Capacitor

    Abstract: electrical home wiring hb ax aerospace Capacitor 0.01 uF ax 2008 capacitor 1000 uf 25v CE CAPACITOR PANASONIC ups circuit 25V Electrolytic capacitor datasheet ammeter
    Text: To: DIGI-KEY Issue No. : CE-VHBA4-CE-0 Date of Issue : August 20, 2007 Classification : New , Changed PRODUCT SPECIFICATION FOR APPROVAL Product Description Customer Part Number : Aluminum Electrolytic Capacitor : Product Part Number : V type HB series High. temp. Pb free reflow type


    Original     		PDF