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    LTN150XG-L05

    Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756
    Text: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A


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    BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A LTN150XG-L05 ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756 PDF

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


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    K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106 PDF

    BA100 diode

    Abstract: BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125
    Text: K5C6417YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 16M Bit (1Mx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft August 29, 2001 1.0 Revised - Changed F-Vcc Max. Value (from 3.0V to 3.3V)


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    K5C6417YT 4Mx16) 1Mx16) 81-Ball 80x11 08MAX BA100 diode BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125 PDF

    transistor sr61

    Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
    Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    K5T6432YT 4Mx16) 2Mx16) 81-Ball 80x11 transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    BA100 diode

    Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
    Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)


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    KADxx0300B 2Mx16) 69-Ball 10MAX BA100 diode BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode PDF

    BA107

    Abstract: ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 48FBGA 047MAX BA107 ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941 PDF

    BA961

    Abstract: BA43 48FBGA samsung nor flash ba107
    Text: K8D6x16UTM / K8D6x16UBM NOR FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 48FBGA 047MAX BA961 BA43 samsung nor flash ba107 PDF

    BA107

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX BA107 PDF

    BA114

    Abstract: BA107 samsung ba92 BA122
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 48FBGA 047MAX BA114 BA107 samsung ba92 BA122 PDF

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


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    KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp PDF

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112 PDF

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 PDF

    TH50VSF3680AASB

    Abstract: A12F TH50VSF3681AASB BA72 BA111 BA96 BA110 ba95 BA102 BA85
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


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    TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) TH50VSF3680AASB A12F TH50VSF3681AASB BA72 BA111 BA96 BA110 ba95 BA102 BA85 PDF

    samsung nor flash

    Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB
    Text: NOR FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8A6415ET couldre17. 54MHz A0-A21 00000FH 00001FH 00002FH 000000H samsung nor flash BA102 BA127 Diode BA134 samsung nor K8A6415EBB PDF

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


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    KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100 PDF

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


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    KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402 PDF

    BA99

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    K8A6415ET 54MHz A0-A21 00000FH 00001FH 00002FH 000000H BA99 PDF

    BA102

    Abstract: BA127 Diode diode ba102 BA114
    Text: TC58FVT641/B641FT/XB-70,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 BA102 BA127 Diode diode ba102 BA114 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, PDF

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


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    TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 PDF

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


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    TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58FYM6 T/B 2A (FT/XB) 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FYM6T2A/B2A features commands for


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    TC58FYM6 64MBIT TC58FYM6T2A/B2A 67108864-bit, PDF

    BA102

    Abstract: diode ba102 diode ba103 BA127 Diode BA102 equivalent BA111 Ba91 diode ba110 ba119 BA127
    Text: TH50VSF3682/3683AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3682/3683AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


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    TH50VSF3682/3683AASB TH50VSF3682/3683AASB 608-bit 864-bit 69-pin XXXh/60h) BPA/60h) XXXh/40h) BA102 diode ba102 diode ba103 BA127 Diode BA102 equivalent BA111 Ba91 diode ba110 ba119 BA127 PDF