NR421DS
Abstract: 455KHZ NR461 88-108
Text: 'NATL SE M^O ND z z {DISCRETE} 650 î 130 NATL SEMICOND, z bSD113D DISCRETE D D 3 S t il 7 28C 35617 National Semiconductor Q. <0 s i f ic EflC D 1 T '- 'Z / ' z NR461ÌNPN) low-noise RF/IF transistor features ITI package and lead coding • • Low Ccb for excellent RF stability
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bSD113D
NR461
455KHz
to-92
800KHz
100/JV/M
280/A//M
10KHz:
-28dB
15KHz
NR421DS
88-108
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PDF
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MMBT201
Abstract: No abstract text available
Text: NATL SEMICGND DISCRETE H E D I bSD113D □ U3V d J. d U | • o National Semiconductor * Z IO T-2 7-/3 3 to o MMBT201 PN201 TUG/10100-5 PNP General Purpose Amplifier . Electrical Characteristics Ta = 25°C unless otherwise noted Min Parameter Symbol Max Units
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MMBT201
bSD113D
T-27-/3
TL/G/10100-5
TL/G/10100-1
MMBT201
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PDF
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n 5j
Abstract: NJ 20 U1 W NSDu95 SK-I 10
Text: NATL SEMICOND {DISCRETE} 2fl bSD113D 00354b5 L T-33-31 This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r NATL SENICOND {DISCRETE} 50 D E | b S 0 1 1 3 G DC^SMbt fl | ~ ^ T-33-31 NATL I« SZ ÌEMI C O N D , DISCRETE 28C
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bSD113D
003S4b5
T-33-31
bS0113G
650t130
n 5j
NJ 20 U1 W
NSDu95
SK-I 10
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface Mount Diodes bSD113D Discrete POWER & Signal Technologies National Sem iconductor " Surface Mount Diodes ÜÜM0MÖ5 Computer Diodes by Descending Bv LEADLESS GLASS PACKAGE 71S Device No. Package No. FDLL914 LL-34 (V) Min Ir (nA) Max 100 25 Bv C V
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OCR Scan
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bSD113D
FDLL914A
FDLL914B
FDLL916
FDLL914
LL-34
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2N3819 NATIONAL SEMICONDUCTOR
Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
Text: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k
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OCR Scan
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bSD113D
D3I14ci,
2N3819
T0-92
2N4416
PN4416
MMBF4416
O-236*
2N5245
2N3819 NATIONAL SEMICONDUCTOR
National 2N3819
2n3819 surface mount
2N5247
MMBFJ304
MMBFJ305
N CHANNEL JFET 2N3819
2N5951
2N5246
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PDF
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NDP505A
Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
Text: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80
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OCR Scan
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O-220AB
NDP710A
NDP710AE
NDP710B
NDP710BE
NDP610A
NDP610AE
NDP610B
NDP610BE
NDP510A
NDP505A
NDP705AE
NDP605A
NDP405B
NDP510AE
NDP510B
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PDF
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92PU45
Abstract: SE9300 100C DOBS435
Text: NATL SEHICOND {DISCRETE* 5fi DE | bSD113D 00BS4B2 2 | NPN Transistors This Material Copyrighted By Its Respective Manufacturer SEMICOND 6501130 2fl {DISCRETE} NATL SEMICOND, DE~| b S 0 1 1 3 D in o in o in o 8 8 in o in o o o o o o O 200 200 in ' in in in
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bSD113D
DOBS435
T-29-29
003SM3S
92PU45
SE9300
100C
DOBS435
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PDF
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MMBT4209
Abstract: 2N4209 MMBT3646 transistor t0 92 2N5771 MMBT5771 PN2369 PN2369A PN3646 PN4275
Text: bflE » • bSD113D □□3TS31 7 ME High Speed Saturated Switching Transistors continued Devices VcEOIauit) (Volts) Min 15 ton (ns) Max mA M M BT3646 18 28 PN2369 12 18 PN2369A 12 PN3646 18 NPN PUP PN4275 12 10 hFE @ t0n @ < c (ns) Max INSCS CD V C E (tat)« lc Iß
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OCR Scan
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bSD113D
311S31
MMBT3646
O-236*
PN2369
T0-92
PN2369A
PN3646
MMBT4209
2N4209
MMBT3646
transistor t0 92
2N5771
MMBT5771
PN2369
PN2369A
PN3646
PN4275
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PDF
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MMBT4209
Abstract: No abstract text available
Text: bflE T> m bSD113D D03TS31 High Speed Saturated Switching Transistors continued Devices VcEO(siot) (Volts) Min 15 NPN ion PHP h FE @ I j V c E(ta l)«lc *T mA (MHz) Mfn P o (Amb) Package (mW) @25°C MMBT3646 18 28 300 30 30 0.2 30 3.0 350 TO-236* 350 PN2369
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OCR Scan
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bSD113D
D03TS31
MMBT3646
PN2369
PN2369A
PN3646
PN4275
2N4209
2N5771
MMBT4209
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PDF
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B5G1
Abstract: BSS138
Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products
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OCR Scan
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BSS138
OT-23
B5G1
BSS138
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PDF
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NDB7052L
Abstract: NDP7052L
Text: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using
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NDP7052L/
NDB7052L
bSD113D
NDP7052L
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PDF
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NDP506A
Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
Text: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP506A
NDP506B
NDB506A
NDB506B
125-C
bSD113D
0D4D21D
zener diode 4B3
NDB506B
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PDF
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Tf 227
Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector
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OCR Scan
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PN2369A
MMBT2369A
MMPQ2369
OT-23
SOIC-16
bS01130
0040bc
Tf 227
MMBT2369A
MMPQ2369
PN2369A
SOIC-16
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PDF
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TF411
Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Text: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and
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PN2222A
MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
NMT2222
S0113D
bSD113D
004Dbl7
TF411
national PN2222A
IC VS 1307
I-00
MMPQ2222
NMT2222
PN2222A
PZT2222A
TR46
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ksd113
Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100
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OCR Scan
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bS01130
D0B70fll
NSD206
O-202
NSDU56
NSDU57
ksd113
NSD6181
2N4355
2N4354
2N6726
2N6727
MPSA92
151a100
MPSW92
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PDF
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MMBT3906
Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
Text: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch
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OCR Scan
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MMBT3906
MMPQ3906
PZT3906
2N3906
MMBT3906
OT-23
MMPQ3906
SOIC-16
OT-223
model of 2n3906
2N3906
MMBT3906 spice
2n3906 2a
E5 sot223
MMBT3906 SOT-23
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PDF
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MMBT3946
Abstract: MMBT3415 MMBTA20
Text: Surface Mount Devices National Semiconductor Surface Mount Transistors CO m t-4 O O 2 General Purpose Amplifiers and Switches—NPN C a se Style VCBO V Min VCEO (V) Min VEBO (V) Min TO-236 (49) 75 45 6 MMBT100A TO-236 (49) 75 45 6 50 60 300 100 220 MMBT101
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OCR Scan
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MMBT100
O-236
S33jA3Q
MMBT3946
MMBT3415
MMBTA20
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PDF
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NDC7003P
Abstract: 034A
Text: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDC7003P
bSD113D
NDC7003P
034A
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PDF
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BD371C-10
Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o
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OCR Scan
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b50113D
L5D1130
T-03-01
BD371C-10
BD371D
BF494
BF936
yc 236
b055
BC338-25 NATIONAL SEMICONDUCTOR
BD371B
BD371C
BD371C-6
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PDF
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MPSA18 BC550
Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
Text: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F
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OCR Scan
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LSD113D
0D3152M
BC546
T0-92
BC846
O-236*
BC556
BC856
2N2484
MPSA18 BC550
marking 2C
marking 2D BC846
National Semiconductor Discrete catalog
MPSA18 BC558
BC184 BC550
tr bc548
2N3117
bc857 to 92
2N5210 national
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PDF
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DG40B
Abstract: DY TRANSISTOR PN918
Text: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R
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OCR Scan
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PN918
MMBT918
PN918
OT-23
bSD113D
Q40bQc
DG40B
DY TRANSISTOR
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PDF
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2N5458 NATIONAL SEMICONDUCTOR
Abstract: 2N5457 2N5459 2n5458
Text: Semiconductor 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 SOT-23 S Mark: 6 D / 6 1 S / 6 L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from
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OCR Scan
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2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
2N5459
2N5458 NATIONAL SEMICONDUCTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS16 Discrete POWER & Signal Technologies & National Semiconductor" BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol t a =25 c um^s otherwise noted Parameter Value Units Wiv Working Inverse Voltage
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OCR Scan
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BAS16
BAV99
bSD113G
DD4DS41
100ii
bSD113D
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PDF
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2NS087
Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
Text: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.
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2N5086
2N5087
MMBT5086
MMBT5087
OT-23
b501130
bSD113D
2NS087
2N5087 NATIONAL SEMICONDUCTOR
2NS086
2N5087
MMBT5087
T092
0013581
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PDF
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