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    MMBT2369A Price and Stock

    onsemi MMBT2369ALT1G

    TRANS NPN 15V 0.2A SOT23-3
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    DigiKey MMBT2369ALT1G Cut Tape 19,959 1
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    onsemi SMMBT2369ALT1G

    TRANS NPN 15V 0.2A SOT23-3
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    DigiKey SMMBT2369ALT1G Cut Tape 14,854 1
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    onsemi MMBT2369A

    TRANS NPN 15V 0.2A SOT23-3
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    onsemi MMBT2369ALT1

    TRANS NPN 15V 0.2A SOT23
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    onsemi MMBT2369ALT3G

    TRANS NPN 15V 0.2A SOT23-3
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    DigiKey MMBT2369ALT3G Reel 30,000
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    MMBT2369A Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT2369A Fairchild Semiconductor NPN Switching Transistor Original PDF
    MMBT2369A Fairchild Semiconductor NPN Switching Transistor Original PDF
    MMBT2369A Galaxy Semi-Conductor Holdings NPN General Purpose Amplifier Original PDF
    MMBT2369A PanJit Semiconductors NPN GENERAL PURPOSE SWITCHING TRANSISTOR Original PDF
    MMBT2369A Fairchild Semiconductor NPN Switching Transistor Scan PDF
    MMBT2369A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MMBT2369A National Semiconductor NPN SWitching Transistors Scan PDF
    MMBT2369A National Semiconductor High Speed Saturated Switching Transistors Scan PDF
    MMBT2369A National Semiconductor Surface Mount Transistors Scan PDF
    MMBT2369A National Semiconductor Sulface Mount Transistors Scan PDF
    MMBT2369A National Semiconductor NPN Switching Transistor Scan PDF
    MMBT2369AL On Semiconductor Switching Transistor Original PDF
    MMBT2369ALT1 Leshan Radio Company Switching Transistors(NPN Silicon) Original PDF
    MMBT2369ALT1 On Semiconductor Switching Transistor NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT2369ALT1 On Semiconductor Switcing Transistors Original PDF
    MMBT2369ALT1 On Semiconductor Switching Transistor Original PDF
    MMBT2369ALT1G On Semiconductor Switching Transistor NPN Original PDF
    MMBT2369ALT3 On Semiconductor Switching Transistor Original PDF
    MMBT2369ALT3G On Semiconductor Switching Transistor NPN Original PDF
    MMBT2369A_NL Fairchild Semiconductor NPN Switching Transistor Original PDF

    MMBT2369A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot 23 marking code 1ja

    Abstract: No abstract text available
    Text: MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, MMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6


    Original
    PDF MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G AEC-Q101 OT-23 MMBT2369LT1/D sot 23 marking code 1ja

    MMBT2369LT1

    Abstract: MMBT2369ALT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A 2N2369 SOT-23
    Text: MOTOROLA Order this document by MMBT2369LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR 3 NPN Silicon 1 BASE *Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original
    PDF MMBT2369LT1/D MMBT2369LT1 MMBT2369ALT1* MMBT2369LT1/D* MMBT2369LT1 MMBT2369ALT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A 2N2369 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original
    PDF MMBT2369 MMBT2369A OT-23 O-236) UL94V-0 MMBT2369

    2N2369 SOT-23

    Abstract: MMBT2369LT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1
    Text: LESHAN RADIO COMPANY, LTD. Switching Transistors NPN Silicon 3 COLLECTOR MMBT2369LT1 MMBT2369ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector–Emitter Voltage V CEO 15 Vdc Collector–Emitter Voltage V CES 40 Vdc CASE 318–08, STYLE 6


    Original
    PDF MMBT2369LT1 MMBT2369ALT1 236AB) 2N2369 SOT-23 MMBT2369LT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2011/65/EU directives.


    Original
    PDF MMBT2369A 200mA 2011/65/EU IEC61249 OT-23, MIL-STD-750,

    2N2369 SOT-23

    Abstract: marking code m1j transistor MMBT2369LT1 2N2369 2N3227 MMBT2369 MMBT2369A MMBT2369ALT1 MMBT2369ALT1G MMBT2369LT1G
    Text: MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage


    Original
    PDF MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 OT-23 MMBT2369LT1/D 2N2369 SOT-23 marking code m1j transistor MMBT2369LT1 2N2369 2N3227 MMBT2369 MMBT2369A MMBT2369ALT1G MMBT2369LT1G

    MMBT2369ALT1G

    Abstract: MMBT2369LT1G 1N916 MMBT2369 MMBT2369A
    Text: MMBT2369LT1G, MMBT2369ALT1G Switching Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15


    Original
    PDF MMBT2369LT1G, MMBT2369ALT1G MMBT2369LT1/D MMBT2369ALT1G MMBT2369LT1G 1N916 MMBT2369 MMBT2369A

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF MMBT2369L, MMBT2369AL MMBT2369LT1/D

    MMBT2369

    Abstract: No abstract text available
    Text: MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, MMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6


    Original
    PDF MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G MMBT2369LT1/D MMBT2369

    PN2369A

    Abstract: IC NE 556 Rise time 1 ns MMBT2369A MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23
    Text: PN2369A MMBT2369A MMPQ2369 C B E E E B B E B E C TO-92 BE SOT-23 B C SOIC-16 Mark: 1S C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*


    Original
    PDF PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 PN2369A MMBT2369A IC NE 556 Rise time 1 ns MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original
    PDF MMBT2369A 200mA 2002/95/EC OT-23, MIL-STD-750,

    2N2369 SOT-23

    Abstract: MMBT2369ALT1 1N916 2N2369 2N3227 MMBT2369 MMBT2369LT1
    Text: ON Semiconductort MMBT2369LT1 MMBT2369ALT1* Switching Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage


    Original
    PDF MMBT2369LT1 MMBT2369ALT1* r14525 MMBT2369LT1/D 2N2369 SOT-23 MMBT2369ALT1 1N916 2N2369 2N3227 MMBT2369 MMBT2369LT1

    MMBT2369A

    Abstract: Transistor General Purpose Transistor FE SOT
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original
    PDF MMBT2369A 200mA 2002/95/EC OT-23, MIL-STD-750, MMBT2369A Transistor General Purpose Transistor FE SOT

    switching transistor 331

    Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A 1073 PN222N label
    Text: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol


    Original
    PDF PN2369A MMBT2369A PN2369A OT-23 switching transistor 331 CBVK741B019 F63TNR MMBT2369A PN2222N 1073 PN222N label

    2N2369 SOT-23

    Abstract: MMBT2369LT1 2N3227 marking code m1j transistor 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1 M1JX
    Text: MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage


    Original
    PDF MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 r14525 MMBT2369LT1/D 2N2369 SOT-23 MMBT2369LT1 2N3227 marking code m1j transistor 1N916 2N2369 MMBT2369 MMBT2369A M1JX

    switching transistor 331

    Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A
    Text: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol


    Original
    PDF PN2369A MMBT2369A PN2369A OT-23 switching transistor 331 CBVK741B019 F63TNR MMBT2369A PN2222N

    MMBT2369A

    Abstract: MMBT2369
    Text: MMBT2369 / MMBT2369A NPN Silicon Switching Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 15 V Collector Emitter Voltage VCES 40 V Emitter Base Voltage


    Original
    PDF MMBT2369 MMBT2369A OT-23 100MHz MMBT2369A

    MMBT2369LT1

    Abstract: MMBT2369 MMBT2369A MMBT2369ALT1
    Text: MMBT2369LT1 / MMBT2369ALT1 NPN Silicon Switching Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Base Voltage VCBO 40 Vdc Collector Emitter Voltage VCEO 15 Vdc Collector Emitter Voltage VCES 40 Vdc Emitter Base Voltage


    Original
    PDF MMBT2369LT1 MMBT2369ALT1 OT-23 10mAdc, 10Vdc, 100MHz 10mAdc 10mAdc MMBT2369 MMBT2369A MMBT2369ALT1

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-13 1.1 2.9 ±0.1 0.4 Type Code 1 1.3±0.1 2.5 max 3 2 Power dissipation


    Original
    PDF MMBT2369 MMBT2369A OT-23 O-236) UL94V-0 MMBT2369

    S100 NPN Transistor

    Abstract: S100 transistor SHD431101S
    Text: SHD431101 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 645, REV. B NPN SWITCHING TRANSISTOR SHD431101S - S-100 JANTX Screening SHD431101ST - S-100 (JANTX) Screening, Solder dipped • Hermetic, Ceramic Package • Electrically Equivalent to MMBT2369A


    Original
    PDF SHD431101 SHD431101S S-100 SHD431101ST MMBT2369A S100 NPN Transistor S100 transistor

    Tf 227

    Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
    Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector


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    PDF PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 bS01130 0040bc Tf 227 MMBT2369A MMPQ2369 PN2369A SOIC-16

    PN2369A

    Abstract: No abstract text available
    Text: S i M 1 C O N B U C T O P3 PN2369A MMBT2369A B / MMPQ2369 SOT-23 MMPQ2369 SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d fo r high s p e e d s a tu ra tio n sw itc h in g a t c o llec to r c u rre n ts of 1 0 m A to 1 0 0 m A . S o u rc e d from P ro c e s s 2 1 .


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    PDF PN2369A MMBT2369A PN2369A MMPQ2369 OT-23 SOIC-16

    TG 2309

    Abstract: MMBT2369LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR NPN Silicon 'M o to ro la Preferred D evice BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value C ollector-E m itter Voltage v CEO 15 Vdc C ollector-E m itter Voltage


    OCR Scan
    PDF MMBT2369LT1 MMBT2369ALT1* OT-23 O-236AB) MMBT2369ALT1 TG 2309

    PN2369A

    Abstract: MMBT2369A MMPQ2369 transistor GC cd rjr ce transistor
    Text: s s vis z;-c; molj z t o h PN2369A MMBT2369A MMPQ2369 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Màximum RdtinÇjS T A = 2 5 ° C u n le s s o th e r w is e n o te d


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    PDF PN2369A MMBT2369A MMPQ2369 MMPQ2369 transistor GC cd rjr ce transistor