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    NDB506B Search Results

    NDB506B Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDB506B National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB506B National Semiconductor TO-263AB DMOS Power MOSFET Scan PDF
    NDB506BE National Semiconductor TO-263AB DMOS Power MOSFET Scan PDF
    NDB506BEL National Semiconductor TO-263AB Logic Level DMOS Power MOSFETS Scan PDF
    NDB506BL National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB506BL National Semiconductor TO-263AB Logic Level DMOS Power MOSFETS Scan PDF

    NDB506B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    NDP506A

    Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
    Text: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP506A NDP506B NDB506A NDB506B 125-C bSD113D 0D4D21D zener diode 4B3 NDB506B

    NDP506BL

    Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
    Text: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		PDF NDP506AL NDP506BL NDB506AL NDB506BL S01130 0GM0215 bSD1130 Zener diode DW NDP506A NDB506BL

    b527

    Abstract: tic 263a NDP506A
    Text: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's


    OCR Scan     		PDF NDP506A NDP506B NDB506A NDB506B bSD113D b527 tic 263a

    NDB406B

    Abstract: NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL NDB610AEL NDB610AL NDB610BEL NDB610BL
    Text: _ . m bfiE D Power M O S F E T S continued bSD113Q 23b M N S C S TO-263AB Logic Level DMOS NATL SEMICOND (DISCRETE) N Channel N Channel r DS(OB)@ lo ^ B S (Volts) Min 100 Device Po b (Amps) (Watts) (mfì) (Amps/Volts) Max Max Max NDB710AEL 38 21/5 42 42


    OCR Scan     		PDF bSD113D O-263AB NDB710AEL NDB710AL NDB710BEL NDB710BL NDB610AEL NDB610AL NDB610BEL NDB610BL NDB406B NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL

    NDB406B

    Abstract: NDB605A National Semiconductor Discrete catalog NDB506B NDB510A NDB510AE NDB510B NDB610A NDB610AE NDB610B
    Text: böE D NATL TO-263AB DMOS SE I UCOND N Channel 100 Device NDB710A Po *D Amps (Watts) (mQ) (Amps/Volts) Max Max Max 38 21/10 42 42 21/10 40 65 13/10 26 (Volts) Min 150 80 80 12/10 NDB606B 24 120 7.5/10 15 150 6.5/10 13 250 4/10 8 300 3.5/10 7 NDB506A 60 NDB708A


    OCR Scan     		PDF O-263AB bSG113Q NDB710A NDB710AE NDB710B NDB710BE NDB610A NDB610AE NDB610B NDB610BE NDB406B NDB605A National Semiconductor Discrete catalog NDB506B NDB510A NDB510AE NDB510B NDB610A NDB610AE NDB610B