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    BSD113D Search Results

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    NR421DS

    Abstract: 455KHZ NR461 88-108
    Text: 'NATL SE M^O ND z z {DISCRETE} 650 î 130 NATL SEMICOND, z bSD113D DISCRETE D D 3 S t il 7 28C 35617 National Semiconductor Q. <0 s i f ic EflC D 1 T '- 'Z / ' z NR461ÌNPN) low-noise RF/IF transistor features ITI package and lead coding • • Low Ccb for excellent RF stability


    OCR Scan     		PDF bSD113D NR461 455KHz to-92 800KHz 100/JV/M 280/A//M 10KHz: -28dB 15KHz NR421DS 88-108

    MMBT201

    Abstract: No abstract text available
    Text: NATL SEMICGND DISCRETE H E D I bSD113D □ U3V d J. d U | • o National Semiconductor * Z IO T-2 7-/3 3 to o MMBT201 PN201 TUG/10100-5 PNP General Purpose Amplifier . Electrical Characteristics Ta = 25°C unless otherwise noted Min Parameter Symbol Max Units


    OCR Scan     		PDF MMBT201 bSD113D T-27-/3 TL/G/10100-5 TL/G/10100-1 MMBT201

    n 5j

    Abstract: NJ 20 U1 W NSDu95 SK-I 10
    Text: NATL SEMICOND {DISCRETE} 2fl bSD113D 00354b5 L T-33-31 This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r NATL SENICOND {DISCRETE} 50 D E | b S 0 1 1 3 G DC^SMbt fl | ~ ^ T-33-31 NATL I« SZ ÌEMI C O N D , DISCRETE 28C


    OCR Scan     		PDF bSD113D 003S4b5 T-33-31 bS0113G 650t130 n 5j NJ 20 U1 W NSDu95 SK-I 10

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Diodes bSD113D Discrete POWER & Signal Technologies National Sem iconductor " Surface Mount Diodes ÜÜM0MÖ5 Computer Diodes by Descending Bv LEADLESS GLASS PACKAGE 71S Device No. Package No. FDLL914 LL-34 (V) Min Ir (nA) Max 100 25 Bv C V


    OCR Scan     		PDF bSD113D FDLL914A FDLL914B FDLL916 FDLL914 LL-34

    2N3819 NATIONAL SEMICONDUCTOR

    Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
    Text: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k


    OCR Scan     		PDF bSD113D D3I14ci, 2N3819 T0-92 2N4416 PN4416 MMBF4416 O-236* 2N5245 2N3819 NATIONAL SEMICONDUCTOR National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 2N5246

    NDP505A

    Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
    Text: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80


    OCR Scan     		PDF O-220AB NDP710A NDP710AE NDP710B NDP710BE NDP610A NDP610AE NDP610B NDP610BE NDP510A NDP505A NDP705AE NDP605A NDP405B NDP510AE NDP510B

    92PU45

    Abstract: SE9300 100C DOBS435
    Text: NATL SEHICOND {DISCRETE* 5fi DE | bSD113D 00BS4B2 2 | NPN Transistors This Material Copyrighted By Its Respective Manufacturer SEMICOND 6501130 2fl {DISCRETE} NATL SEMICOND, DE~| b S 0 1 1 3 D in o in o in o 8 8 in o in o o o o o o O 200 200 in ' in in in


    OCR Scan     		PDF bSD113D DOBS435 T-29-29 003SM3S 92PU45 SE9300 100C DOBS435

    MMBT4209

    Abstract: 2N4209 MMBT3646 transistor t0 92 2N5771 MMBT5771 PN2369 PN2369A PN3646 PN4275
    Text: bflE » • bSD113D □□3TS31 7 ME High Speed Saturated Switching Transistors continued Devices VcEOIauit) (Volts) Min 15 ton (ns) Max mA M M BT3646 18 28 PN2369 12 18 PN2369A 12 PN3646 18 NPN PUP PN4275 12 10 hFE @ t0n @ < c (ns) Max INSCS CD V C E (tat)« lc Iß


    OCR Scan     		PDF bSD113D 311S31 MMBT3646 O-236* PN2369 T0-92 PN2369A PN3646 MMBT4209 2N4209 MMBT3646 transistor t0 92 2N5771 MMBT5771 PN2369 PN2369A PN3646 PN4275

    MMBT4209

    Abstract: No abstract text available
    Text: bflE T> m bSD113D D03TS31 High Speed Saturated Switching Transistors continued Devices VcEO(siot) (Volts) Min 15 NPN ion PHP h FE @ I j V c E(ta l)«lc *T mA (MHz) Mfn P o (Amb) Package (mW) @25°C MMBT3646 18 28 300 30 30 0.2 30 3.0 350 TO-236* 350 PN2369


    OCR Scan     		PDF bSD113D D03TS31 MMBT3646 PN2369 PN2369A PN3646 PN4275 2N4209 2N5771 MMBT4209

    B5G1

    Abstract: BSS138
    Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan     		PDF BSS138 OT-23 B5G1 BSS138

    NDB7052L

    Abstract: NDP7052L
    Text: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using


    OCR Scan     		PDF NDP7052L/ NDB7052L bSD113D NDP7052L

    NDP506A

    Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
    Text: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP506A NDP506B NDB506A NDB506B 125-C bSD113D 0D4D21D zener diode 4B3 NDB506B

    Tf 227

    Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
    Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector


    OCR Scan     		PDF PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 bS01130 0040bc Tf 227 MMBT2369A MMPQ2369 PN2369A SOIC-16

    TF411

    Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
    Text: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and


    OCR Scan     		PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 NMT2222 S0113D bSD113D 004Dbl7 TF411 national PN2222A IC VS 1307 I-00 MMPQ2222 NMT2222 PN2222A PZT2222A TR46

    ksd113

    Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
    Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100


    OCR Scan     		PDF bS01130 D0B70fll NSD206 O-202 NSDU56 NSDU57 ksd113 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92

    MMBT3906

    Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
    Text: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­


    OCR Scan     		PDF MMBT3906 MMPQ3906 PZT3906 2N3906 MMBT3906 OT-23 MMPQ3906 SOIC-16 OT-223 model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23

    MMBT3946

    Abstract: MMBT3415 MMBTA20
    Text: Surface Mount Devices National Semiconductor Surface Mount Transistors CO m t-4 O O 2 General Purpose Amplifiers and Switches—NPN C a se Style VCBO V Min VCEO (V) Min VEBO (V) Min TO-236 (49) 75 45 6 MMBT100A TO-236 (49) 75 45 6 50 60 300 100 220 MMBT101


    OCR Scan     		PDF MMBT100 O-236 S33jA3Q MMBT3946 MMBT3415 MMBTA20

    NDC7003P

    Abstract: 034A
    Text: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDC7003P bSD113D NDC7003P 034A

    BD371C-10

    Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
    Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o


    OCR Scan     		PDF b50113D L5D1130 T-03-01 BD371C-10 BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6

    MPSA18 BC550

    Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
    Text: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F


    OCR Scan     		PDF LSD113D 0D3152M BC546 T0-92 BC846 O-236* BC556 BC856 2N2484 MPSA18 BC550 marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national

    DG40B

    Abstract: DY TRANSISTOR PN918
    Text: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R


    OCR Scan     		PDF PN918 MMBT918 PN918 OT-23 bSD113D Q40bQc DG40B DY TRANSISTOR

    2N5458 NATIONAL SEMICONDUCTOR

    Abstract: 2N5457 2N5459 2n5458
    Text: Semiconductor 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 SOT-23 S Mark: 6 D / 6 1 S / 6 L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from


    OCR Scan     		PDF 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 2N5459 2N5458 NATIONAL SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: BAS16 Discrete POWER & Signal Technologies & National Semiconductor" BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol t a =25 c um^s otherwise noted Parameter Value Units Wiv Working Inverse Voltage


    OCR Scan     		PDF BAS16 BAV99 bSD113G DD4DS41 100ii bSD113D

    2NS087

    Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
    Text: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.


    OCR Scan     		PDF 2N5086 2N5087 MMBT5086 MMBT5087 OT-23 b501130 bSD113D 2NS087 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5087 MMBT5087 T092 0013581