Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The
|
OCR Scan
|
PDF
|
MSM511002B
576-Word
MSM511002B
b7242HG
E4240
|
TRANSISTOR AH-10
Abstract: MSM511002A-70
Text: 5ÔE D • b?242MÜ D0127fl3 113 H O K I J O K I O K I M S M s e m SEMI CONDUCTOR ic o n d u c t o r ÊROUP ~ T * ' ~ U - 2 3 - i 5 ' 5 1 1 0 0 2 A _ 1,048,576-WORD X 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The
|
OCR Scan
|
PDF
|
242MG
MSM511002A_
576-WORD
MSM511002A
TRANSISTOR AH-10
MSM511002A-70
|
IVD12
Abstract: PABX current rating MSA4709 IVD10 4w-2w hybrid transister IV-D-20 900J2 DQG7512 FREE transisters
Text: O K I SEMICONDUCTOR GROUP 23E D • O K I semiconductor MSA4709_ b7 2 4 2 4 0 0007512 _ ' ~r-7s-n-n SUBSCRIBER LINE IN TERFACE CIRCUIT G EN ER A L DESCRIPTION The MSA4709 is designed to provide BSH functions and to meet PABX transmission performance
|
OCR Scan
|
PDF
|
DQG7512
MSA4709
MSA4709
4700pF
12showsatVBB
150Kil
IV-D-25
b724240
g007535
IVD12
PABX current rating
IVD10
4w-2w hybrid
transister
IV-D-20
900J2
DQG7512
FREE transisters
|
M50 .0022
Abstract: MSM5116400
Text: O K I Semiconductor MSC23841-XXBS20/DS20 8,388,608-Word by 40-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 23841-xxBS20/D S20 is a fully decoded 8,388,608-word x 40-bit CM OS Dynamic Random Access Memory Module composed of twenty 16-Mb DRAMs in SOJ M SM5116400 packages mounted
|
OCR Scan
|
PDF
|
MSC23841-XXBS20/DS20
608-Word
40-Bit
MSC23841-xxBS20
/DS20
16-Mb
MSM5116400)
72-pin
M50 .0022
MSM5116400
|
D08-15
Abstract: No abstract text available
Text: Preliminary OKI Semiconductor MSM5 4 3 2 1 2 8 _ 131,072 -Word x 32 Bit DYNAMIC RAM : HYPER PAGE MODE TYPE DESCRIPTION The MSM5432128 is a new generation Graphic DRAM organized in 131,072-word by 32-bit configuration. The technology used to fabricate the MSM5432128 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM5432128
072-word
32-bit
64-pin
SSOP64-P-525/Q
MSM54321ndustrial
D08-15
|
HA 16630
Abstract: 910nm Infrared Emitting Diode OLD224 INFRARED EMITTING DIODE TO18 1000 nm light emitting diode
Text: O K I electronic OLD224 components GaAlAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAl As infrared light em ission micro-diode sealed w ith a transparent epoxy resin in a TO-18 case. Its light em ission w ave length is peaks at 910 nm. Because of its high
|
OCR Scan
|
PDF
|
OLD224
OLD224
b754240
001603b
L72H240
HA 16630
910nm
Infrared Emitting Diode
INFRARED EMITTING DIODE TO18
1000 nm light emitting diode
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C221ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C221ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C221ZB operates on a single 5 V power supply and is TTL compatible. Since the
|
OCR Scan
|
PDF
|
MSM27C221ZB
144-Word
MSM27C221ZB
32-pin
|
TfiS SEMICONDUCTOR GROUP
Abstract: MSM514400 MSM514400-10 S4240 24B4G
Text: 4b E D • b7S4240 O K I QODTbDS TfiS B O K I J SEMICONDUCTOR M S M 5 1 4 4 0 0 7 - GROUP V * - 2 3 1,048,576-WORD X 4-BIT DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 5 1 4 4 0 0 isa new generation dynamic R A M organized as 1,048,576 w ords by 4 bits.
|
OCR Scan
|
PDF
|
b724240
MSM514400
576-WORD
MSM514400isa
26-pin
20-pin
msm5144oo-
b75424Q
TfiS SEMICONDUCTOR GROUP
MSM514400-10
S4240
24B4G
|
U2765
Abstract: 1750 Hz TONE fsk modem ic design HF modem DTMF MSM6888BGS-VK MSM6888BRS AM receiver 28 dip
Text: OKI Semiconductor MSM6888B_ Multi-Function Telecommunication LSI G EN ER A L D ES C R IPTIO N The M SM 6888B provides three kinds of functions w h ich are often applied for telephone term inal equipm ent. Those are D T M F generator, D T M F receiver and lo w speed 300 bps F S K m odem defined as V.21
|
OCR Scan
|
PDF
|
MSM6888B
6888B
6888B
b7242MG
U2765
1750 Hz TONE
fsk modem ic
design HF modem
DTMF
MSM6888BGS-VK
MSM6888BRS
AM receiver 28 dip
|
LF400
Abstract: No abstract text available
Text: O K I electronic components OL395N-20/20P, OL395N-40/20P, OL395N-60/20P, OL395N-80/20P, 0L395N-100/20P_ 1.3 |im High-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL395N-20/ 20P, ÜL395N-40/20P, OL395N-60/20P, OL395N-80/20P, OL395N-100/20P are
|
OCR Scan
|
PDF
|
OL395N-20/20P,
OL395N-40/20P,
OL395N-60/20P,
OL395N-80/20P,
0L395N-100/20P_
OL395N-20/
L395N-40/20P,
OL395N-100/20P
LF400
|
Untitled
Abstract: No abstract text available
Text: O K I S em iconductor MSC23B27A-XXBS2/PS2 262,144-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23B27A-xxBS2/DS2 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs 256K x 16 in SOJ packages
|
OCR Scan
|
PDF
|
MSC23B27A-XXBS2/PS2
144-Word
32-Bit
MSC23B27A-xxBS2/DS2
72-pin
MSC23B27A-xxBS2
|