Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The
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MSM511001B
576-Word
MSM511001B
R1001B
D0177fiD
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FST 460 TRANSISTOR
Abstract: m5205 oki MSM6258 FST 460 KBR 6.0 MSM6258V QFP44-P-910-V1K Transistor FST 460 4813b MSM6258VJS
Text: O K I Semiconductor ISM6258/MSM6258V ADPCM SPEECH PROCESSOR FOR SOLID STATE RECORDER TO CUSTOMERS FOR NEW CIRCUIT DESIGN For a new circuit design, i t is recom m ended to use not the MSM6258, b u t the M SM6388/ MSM6588 as described later. The MSM6258 has an 8-bit AD converter and
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ISM6258/MSM6258V
MSM6258,
MSM6388/
MSM6588
MSM6258
MSM6388/MSM6588
12-bit
MSM6388
FST 460 TRANSISTOR
m5205 oki
FST 460
KBR 6.0
MSM6258V
QFP44-P-910-V1K
Transistor FST 460
4813b
MSM6258VJS
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T462 transistor
Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
Text: 4bE D rtTTT - • b 7 2 4 2 4 D O D D ' m û ô ITS H O K I J I O K I S E M I C O N D U C T O R GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 262,144 W O R D X1-BIT S D Y N A M IC R A M GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.
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b72424D
MSM51C256
DIP/18
MSM51C256-80
MSM51C25efore
T462 transistor
EZ613
transistor t462
MSM51C256-10
MSM51C256RS
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6310 PCM RECORDING & PLAYBACK LSI GENERAL DESCRIPTION The M SM 6310 is a PCM recording & playback LSI which is manufactured using O ki's low power CM OS silicon gate technology. The M SM 6310 is designed for the purpose of endless loop recording by 8-bit PCM.
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MSM6310
2200Hz
1700Hz
3600Hz
2700Hz
4000Hz
7500Hz
200ki2
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor_ MSM518129/L_ 131,072-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM518129/L is a 131,072-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM518129/L achieves high integration, high-speed operation, and low-power
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MSM518129/L_
072-Word
MSM518129/L
26/24-pin
MSM518129L
cycles/16
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sm 0038 tsop
Abstract: sm 0038 sm 0038 PIN DIAGRAM D2720
Text: O K I S em ic o n d u c to r M SC23T/D 2720A -X X BS9 2,097,152-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M em ory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SOJ
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MSC23T/D2720A-XXBS9
152-Word
72-Bit
MSC23T/D2720A-xxBS9
16-Mb
168-pin
72-bit
sm 0038 tsop
sm 0038
sm 0038 PIN DIAGRAM
D2720
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23441 -xxBS10/DS10 [FrtlSmSuisirf 4,194,304-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23441-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages m ounted with
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MSC23441
-xxBS10/DS10
304-Word
40-Bit
MSC23441-xxBS10/DS10
16-Mb
MSM5116400)
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514100C/CL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514100C /C L is a 4 , 1 9 4 ,3 0 4 -w o r d * 1-bit dynam ic RAM fabricated in OKI's C M O S silicon gate technology. The M SM 514100C /C L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal CM O S. The M SM 514100C /C L is
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MSM514100C/CL
304-Word
514100C
leina26/20-p
J/20-p
r26/20-p
514100CL
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1812 8 /L_ 131,072-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM518128/L achieves high integration, high-speed operation, and low-power
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072-Word
MSM518128/L
26/24-pin
MSM518128L
cycles/16
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OLP221Q GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD2210 is a high output GaAIAs infrared light emission micro-diode sealed with collimator lens in transparent epoxy resin. FEATURES • Parallel beam • 910 nm wavelength at peak emission
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OLP221Q
OLD2210
QLD2210
b75424G
OLD221Q
L724240
OLD2210
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MSM5265GS-BK
Abstract: MSM5265GS-K 6 pin 2D 1002 MSM5265GS "LCD Drivers" 12 pin 7 segment display pin configuration oki lcd driver MSM5265 QFP100-P-1420-BK QFP100-P-1420-K
Text: O K I Semiconductor MSM5265 8O-DOT LCD DRIVER GENERAL DESCRIPTION The M SM 5265 is an LC D driver w hich can directly drive up to 80 segm ents in the static display mode, w hile 160 segm ents in the 1 / 2 duty dynam ic display mode. The M SM 5265 is fabricated w ith low pow er C M O S m etal gate technology, consisting of a 160stage shift register, 160-bit data latch, 80 sets of LC D drivers and a com m on signal generator.
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MSM5265_
MSM5265
160-stage
160-bit
MSM5265
L7E4240
0022Tbl
MSM5265GS-BK
MSM5265GS-K
6 pin 2D 1002
MSM5265GS
"LCD Drivers"
12 pin 7 segment display pin configuration
oki lcd driver
QFP100-P-1420-BK
QFP100-P-1420-K
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L1ASI
Abstract: MSM5116400
Text: O K I Semiconductor MSC23437-XXBS9/DS9 Pir@D3[finiSenary 4,194,304-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23437-xxBS9/DS9 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access Memory Module composed of nine 16-Mb DRAMs in SOJ MSM5116400 packages mounted with
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MSC23437-xxBS9/DS9
304-Word
36-Bit
MSC23437-xxBS9/DS9
16-Mb
MSM5116400)
72-pin
L1ASI
MSM5116400
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TSCC 1100
Abstract: SI03
Text: 5ôE D • b 7 2 4 2 4 D □ 0 1 3 4 7 b =12a « O K I J O K I O K I s e m i c o n d S E M I C O N D U C T O R GR OU P u c t o r - r ^ - ¿ 3 - 1 ? M S M 5 1 4 2 5 2 262,144-Word x 4-Bit MULTIPORT DYNAMIC RAM <Fast Page Mode» <Fast Page Mode> DESCRIPTION
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b75424o
001347b
MSM514252
144-Word
MSM514252
TSCC 1100
SI03
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FST 460 transistor
Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
Text: O K I Semiconductor ISM6258/MSM6258V ADPCM S P E E C H P R O C E S S O R FO R SO LID ST A T E R E C O R D E R TO C U S T O M ER S FO R NEW C IR C U IT DESIGN For a new circuit design, it is recommended to use not the M SM 6258, but the M SM 6388/ M SM 6588 as described later.
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ISM6258/MSM6258V
6388/M
12-bit
MSM6258
MSM6588.
7542M0
MSM6258/MSM6258V
MSM80C85
b7E4240
FST 460 transistor
80c85
UTM RESISTOR 210-9
sc2305
Transistor FST 461
QFP44-P-910-V1K
Transistor FST 460
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D016
Abstract: MSM51V16165A
Text: O K I Sem iconductor MSM5 1 V16165A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16165A is
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MSM51V16165A
576-Word
16-Bit
MSM51V16165A
42-pin
50/44-pin
D016
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PDF
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Untitled
Abstract: No abstract text available
Text: OKI T35L electronic components Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T35L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package. FEATURES
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2424G
b724240
b7242MG
b724E40
b72424D
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC5301B-01 CO M M O N /SEG M EN T DRIVER WITH RAM G E N E R A L D E S C R IP T IO N The MSC5301B-01 is an LCD driver LSI w ith a built-in RAM. This allows greater flexibility by bit m apping this on board RAM to control individual sections on the LCD panel. It can form the
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MSC5301
MSC5301B-01
DGM35b
b724240
MSC5301B-01
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m5298
Abstract: OKI M5298 display parallel lcd 4x20 pin diagram of lcd display 4x20 18 pin DOT MATRIX MSM5299B MSM5299BGS MSM6255GS QFP100-P-1420-K QFP100-P-1420-VIK
Text: 4bE D • O K I O K I b 7 2 4 2 4 0 0 0 1 1 7 S 1 41b H O K I J S E M I C O N D U C T O R GR OU P semiconductor MSM5299B_ T -S Z -t$ -0 7 DOT MATRIX LCD 80 DOT SEGMENT DRIVER GENERAL DESCRIPTION The O K I MSM5299BGS is a dot matrix LCD 's segment driver L S I which is fabricated by CMOS low
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MSM5299B
T-S2-13-07
MSM5299BGS
80-bit
m5298
OKI M5298
display parallel lcd 4x20
pin diagram of lcd display 4x20
18 pin DOT MATRIX
MSM5299B
MSM6255GS
QFP100-P-1420-K
QFP100-P-1420-VIK
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Untitled
Abstract: No abstract text available
Text: O K I electronic components 0PA256C-1 Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, 1-dimensional diode array com prised of PN junction photodetector diodes and CCDs charge coupled devices . By using a 2-phase clock pulse, transfer pulse, an d reset
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0PA256C-1
OPA256C-1
256-bit,
OPA256C-1
b724540
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U2765
Abstract: 1750 Hz TONE fsk modem ic design HF modem DTMF MSM6888BGS-VK MSM6888BRS AM receiver 28 dip
Text: OKI Semiconductor MSM6888B_ Multi-Function Telecommunication LSI G EN ER A L D ES C R IPTIO N The M SM 6888B provides three kinds of functions w h ich are often applied for telephone term inal equipm ent. Those are D T M F generator, D T M F receiver and lo w speed 300 bps F S K m odem defined as V.21
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MSM6888B
6888B
6888B
b7242MG
U2765
1750 Hz TONE
fsk modem ic
design HF modem
DTMF
MSM6888BGS-VK
MSM6888BRS
AM receiver 28 dip
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM7510_ 300 bps Full Duplex FSK Modem - ITU-T V.21 GENERAL DESCRIPTION T he M S M 7510 is u sefu l for the IT U -T V .21 m o d em , for exam p les, low co st b uilt-in m o d em s, teleco n tro l sy ste m s, h o m e se cu rity sy stem s, etc.
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MSM7510_
7512B
2424D
DD25DS1
0D22DS2
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ST chn 624
Abstract: chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724 MSM6588
Text: O K I Semiconductor MSM6588 M S M 6588 contents GENGERAL D ESCRIPTION . 568 FEATURES. 568
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MSM6588
MSM6588
MSM6388
MSM6588.
0Dlbfl45
096MHz
b724240
ST chn 624
chn 712
LSPM2
CHN 618
chn 631
chn 648 equivalent
CHN 602
CHN 612
h724
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