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    AVALANCHE TRANSISTOR Search Results

    AVALANCHE TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    AVALANCHE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX415

    Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


    Original     		PDF ZTX415 200mA 620pF 100mA 20MHz 100MHz ZTX415 transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c

    edge emitter LED

    Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
    Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


    Original     		PDF OT323 ZUMT413 20MHz 10KHz edge emitter LED AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


    Original     		PDF ZTX415 100mA 200mA 620pF

    FMMT415

    Abstract: No abstract text available
    Text: FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation


    Original     		PDF FMMT415 FMMT417 100mA 200mA FMMT415

    AVALANCHE TRANSISTOR

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BAT54C SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers *


    Original     		PDF BAT54C OT323 ZUMT413 20MHz 10KHz AVALANCHE TRANSISTOR

    a2231

    Abstract: laser LED AVALANCHE TRANSISTOR FMMT413 31AA u 413 DSA003693 CCP4 VF130
    Text: SOT23 NPN SILICON PLANAR AVALANCHE PROVISIONAL FMMT413 TRANSISTOR DATASHEET ISSUE 2- MARCH I 1 1996 FEATURES * Avalanche * 50A Peak avalanche mode operation * Low inductance current E c packaging APPLICATIONS * Laser LED drivers * Fast edge * High speed PARTMARKING


    Original     		PDF FMMT413 VF130V, FMMT413 a2231 laser LED AVALANCHE TRANSISTOR 31AA u 413 DSA003693 CCP4 VF130

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor

    BUZ72A

    Abstract: No abstract text available
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF BUZ72A 100oC 175oC O-220 BUZ72A

    STP6N60FI

    Abstract: No abstract text available
    Text: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STP6N60FI 100oC ISOWATT220 STP6N60FI

    STD2N50

    Abstract: No abstract text available
    Text: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STD2N50 100oC O-251) O-252) O-251 O-252 STD2N50

    STD3N30

    Abstract: No abstract text available
    Text: STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N30 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 300 V < 1.4 Ω 3A TYPICAL RDS(on) = 1.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STD3N30 100oC O-251) O-252) O-251 STD3N30

    STP20N06

    Abstract: STP20N06FI
    Text: STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI VDSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP20N06 STP20N06FI 100oC 175oC O-220 ISOWATT220 STP20N06 STP20N06FI

    STP3N100

    Abstract: STP3N100FI
    Text: STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N100 STP3N100FI • ■ ■ ■ ■ ■ VDSS R DS on ID 1000 V 1000 V <5Ω <5Ω 3.5 A 2A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP3N100 STP3N100FI 100oC O-220 ISOWATT220 STP3N100 STP3N100FI

    MTP6N6

    Abstract: MTP6N60
    Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF MTP6N60 100oC O-220 MTP6N6 MTP6N60

    P-032B

    Abstract: P032B STK4N25
    Text: STK4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N25 • ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STK4N25 100oC OT-82 OT-194 P-032B P032B STK4N25

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation *


    OCR Scan     		PDF 001G35S

    AVALANCHE TRANSISTOR

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * * Fast edge generation High speed pulse generators


    OCR Scan     		PDF 100hA ZTX413 20MHz AVALANCHE TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


    OCR Scan     		PDF 001G35S

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche m ode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


    OCR Scan     		PDF 1070perations

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSUE 2 - MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


    OCR Scan     		PDF FMMT413 FMMT413 7057fl 20MHz

    Untitled

    Abstract: No abstract text available
    Text: I BUZ11 BUZ11FI MAGNA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED,


    OCR Scan     		PDF BUZ11 BUZ11FI BUZ11 O-220 ISOWATT220

    STK2N50

    Abstract: No abstract text available
    Text: SGS-THOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N 50 ' V dss R d s oii Id 500 V 6 Ü 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION


    OCR Scan     		PDF STK2N50 OT-82 OT-194 STK2N50

    STP3N60

    Abstract: stp3n60xi ISOWATT221
    Text: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION


    OCR Scan     		PDF STP3N60XI ISOWATT221 GC24I60 CC24170 GC3S79Q STP3N60 stp3n60xi ISOWATT221

    LD18A

    Abstract: STV18N20 DG73
    Text: £jï SGS-THOMSON M@IMllLiCTl Gl<£i STV18N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vdss RDS on Id STV18N20 200 V < 0.18 ft 18 A • . . . . TYPICAL Rds(ON) = 0.145 Q AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 10OPC


    OCR Scan     		PDF STV18N20 STV18N20 7T2T237 0073bb7 0068039-C 0073bbfl LD18A DG73