YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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Untitled
Abstract: No abstract text available
Text: 712T237 D04LEGÔ 7bb •SGTH / = 7 SGS-THOMSON Ä 7# S T P 3 N 100X 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100XI . . ■ . . ■ V dss RDS on Id 1000 V <61! 1.6 A AVALANCHE RUGGED TECHNO LOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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712T237
D04LEGÃ
100XI
ISOWATT221
STP3N100XI
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Untitled
Abstract: No abstract text available
Text: 7^2^537 OOMblfl? IDI •S6TH SGS-THOMSON S T P 3 N80XI id U O T * ! N - CHANNEL ENHANC EM ENT MODE POW ER MOS TRAN SISTO R TYPE STP3N80XI ■ . ■ ■ . ■ ■ V dss RDS on Id 800 V < 4 .5 n 1 .7 A TYPICAL RDS(on) = 3.9 Q AVALANCHE RUGGED TECHNOLOGY
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N80XI
STP3N80XI
ISOWATT221
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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STP3N60
Abstract: stp3n60xi ISOWATT221
Text: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION
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STP3N60XI
ISOWATT221
GC24I60
CC24170
GC3S79Q
STP3N60
stp3n60xi
ISOWATT221
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ISOWATT221
Abstract: stp8n50xi
Text: SGS-THOMSON STP8N50XI [M S^ OiLiCT[RMD(gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP8N 50XI 500 V I R d s ( o ii 0 .8 5 I LI Id 4 .5 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STP8N50XI
ISOWATT221
ISOWATT221
stp8n50xi
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Untitled
Abstract: No abstract text available
Text: r z T SCS-THOMSON ^ 7 # raaeB iiLi SîB©oase8 SGSF313 SGSF313PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS , HIGH VOLTAGE CAPABILITY (450V V c e o * VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT le = 2.5A, IB1 = 0.5A, V b e o H = -5V . LOW SATURATION VOLTAGE
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SGSF313
SGSF313PI
ISOWATT22Û
E81734
SGSF313PI
T0-220
ISOWATT220
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IRFP450FI
Abstract: IRF540FI ISOWATT221 Tech MOS Technology STLT20FI
Text: GENERAL INFORMATION The Power M OS devices presented in this databook are made using well proven SGS-THOMSON tech nology. SGS-THO MSO N Power MOS technology stands, with equal stature, firmly alongside the com pany's wide range of devices in Power BIPOLAR and
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BUZ71FI
STLT19FI
STLT20FI
IRFZ20FI
IRF520FI
IRF530FI
IRF540FI
IRF620FI
IRF820FI
IRF821
IRFP450FI
ISOWATT221
Tech MOS Technology
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ISOWATT221
Abstract: stp4n80xi stp4n80
Text: SGS-THOMSON STP4N80XI 1ILD N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE RDS on V dss STP4N 80XI 8 00 V ¡ i 3 .5 £2 Id 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW INPUT CAPACITANCE . LOW GATE CHARGE
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STP4N80XI
ISOWATT221
THOMSON-----------------------709
0C2075C»
GC20760
ISOWATT221
stp4n80xi
stp4n80
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ISOWATT221
Abstract: stp3n80xi
Text: £ fj SGS-THOMSON STP3N80XI i!Ll ir^©D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP3N 80XI 4.5 a 800 V 1 .7 A . . . . . • AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT CAPACITANCE
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STP3N80XI
ISOWATT221
GC3425D
ISOWATT221
stp3n80xi
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FREDFETs
Abstract: No abstract text available
Text: COMMITMENT FOR INNOVATION Following its long tradition for innovative power devices, SGS-THOMSON has continued to intro duce new POWER MOS technologies and pro ducts. Diffusion furnaces This has been possible due to the com pany’s lead ing and well established expertise already acquired
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ISOWATT218
ISOWATT220.
ISOWATT221
ISOWATT220
ISOWATT218.
FREDFETs
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Untitled
Abstract: No abstract text available
Text: M 7^5^537 r = 7 Ä T# Otmbggg 03k • S 6 T H _ S G S -T H O M S O N G * [fä m [I g * S S T P 4 N 8 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP4N80XI . . ■ . . . . Voss R D S (on Id 800 V < 3.5 Q 2 A TYPICAL R D S (o n ) = 2.9 Q
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STP4N80XI
ISOWATT221
0Q4b22fl
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GC2269
Abstract: No abstract text available
Text: SGS-THOMSON STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 50XI . . • . . V dss RoS on Id 500 V 4 il 1,7 A AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLICATION O RIENTED CHARACTERIZATION
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STP3N50XI
ISOWATT221
GC22690
GC2269
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