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    SGS Semiconductor Ltd STD17N06L

    N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Power Field-Effect Transistor, 17A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA STD17N06L 3,580
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    SGS Semiconductor Ltd STD17N06

    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Power Field-Effect Transistor, 17A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA STD17N06 2,325
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    • 1000 -
    • 10000 -
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    STD17N06 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STD17N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD17N06-1 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STD17N06-1 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STD17N06L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N06L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N06L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD17N06L-1 STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STD17N06LT4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Original PDF
    STD17N06LT4 STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STD17N06T4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STD17N06T4 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF

    STD17N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STD17N05L

    Abstract: STD17N06L
    Text: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05L 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD17N05L STD17N06L 100oC 175oC O-251) O-252) O-251 O-252 STD17N05L STD17N06L

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    STD17N05L

    Abstract: STD17N06L
    Text: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V DSS R DS on ID STD17N05L TYPE 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD17N05L STD17N06L 100oC 175oC O-251) O-252) O-251 O-252 STD17N05L STD17N06L

    STD17N05L

    Abstract: STD17N06L
    Text: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05L 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD17N05L STD17N06L 100oC 175oC O-251) O-252) O-251 O-252 STD17N05L STD17N06L

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    L9380

    Abstract: L9380-TR SO20 U405
    Text: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1


    Original     		PDF L9380 L9380 L9380-TR L9380-TR SO20 U405

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    L9380

    Abstract: L9380-TR SO20 L9380-TR-LF B60N06
    Text: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1


    Original     		PDF L9380 L9380 L9380-TR L9380-LF L9380-TR SO20 L9380-TR-LF B60N06

    B60N06

    Abstract: L9380 SO20 charge pump mosfet driver external
    Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION


    Original     		PDF L9380 L9380 B60N06 SO20 charge pump mosfet driver external

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    L9380

    Abstract: SO20 voltage comparator IC 5 pin B60N06
    Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION FOR CHANNEL 1 AND 2


    Original     		PDF L9380 L9380 SO20 voltage comparator IC 5 pin B60N06

    irf840 power supply

    Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60
    Text: April 2000 TO-220 VDSS RDS on max (V) (Ω) -60 30 34 50 55 60 75 80 100 150 200 250 300 Type ID(cont) DEVICES REPLACED (A) REMARKS 0.2 0.004 0.006 0.0065 0.009 0.01 0.01 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L 12


    Original     		PDF O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L STP60NE03L-12 STP50NF03L irf840 power supply STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60

    B60N06

    Abstract: SMB7W01-200
    Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION


    Original     		PDF L9380 L9380 D98AT391 L9380-TR B60N06 SMB7W01-200

    17N06L

    Abstract: No abstract text available
    Text: £ jï S G S -1H 0 M S 0 N ULKgraMOeS S T D 17N0 5 L S T D 17N0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.0 8 5 Q. 17 A STD17N06L 60 V < 0.0 8 5 Q. 17 A • . . . . . . . TYPICAL RDS(on) = 0.065 £2


    OCR Scan     		PDF STD17N05L STD17N06L O-251) O-252) 17N06L

    transistor A4t 85

    Abstract: No abstract text available
    Text: S G S -T H O M S O N S T D 1 7 N 0 5 L r a n c œ iiiL iC T iû iia D e i S T D 1 7 N 0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.085 Û 17 A STD17N06L 60 V < 0.085 Q 17 A TYPICAL RDS(on) = 0.065 D,


    OCR Scan     		PDF STD17N05L STD17N06L O-251) O-252) O-252 O-251 STD17N05L/STD17N06L 0068772-B GG72721 transistor A4t 85

    17N06

    Abstract: No abstract text available
    Text: ¿57 S G S -T H O M S O N ¡m e ra « S T D 17N05 S T D 17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss R DS on Id STD17N05 50 V < 0.085 Q. 17 A STD17N06 60 V < 0.085 Q. 17 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF 17N05 17N06 STD17N05 STD17N06 O-251) O-252) O-251 O-252 STD17N05/STD17N06 17N06

    D17N05

    Abstract: 7n05 7n06
    Text: *57 SGS-THOMSON iL iO M iQ s td i7N05 £ I S T D 1 7 N 0 6 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE R DS(on) Id STD17N05 V 50 V < 0.085 a 17 A STD17N06 60 V < 0.085 ß 17 A dss • • . ■ ■ . ■ ■ T Y P IC A L RDS(on) = 0.06 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF STD17N05 STD17N06 D17N05 7n05 7n06