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    TT220

    Abstract: transistor t220 BUZ71 dc to ac TT 220
    Text: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,


    OCR Scan     		PDF BUZ71 BUZ71FI BUZ71 500ms TT220 transistor t220 BUZ71 dc to ac TT 220

    3Na60

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON 3NA60 S T P 3 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3N A60FI V dss R DS(on) Id 600 V 600 V < 4 a <4 a 2.9 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING


    OCR Scan     		PDF 3NA60 STP3NA60 A60FI

    7NA60

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON 7NA60 S T P 7 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7N A 60 STP7NA60FI • • . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1 a < 1 a 7.2 A 4 .4 A T Y P IC A L RDS(on) = 0.92 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING


    OCR Scan     		PDF STP7NA60FI 7NA60

    DD 127 D TRANSISTOR

    Abstract: JIS B 0409
    Text: *57 TYPE STP30N06 STP30N06FI • • . ■ ■ . ■ ■ SGS-THOMSON s t p 3 on o6 ilLiCTIIMDe STP30N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V 60 V < 0 .0 5 a < 0 .0 5 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF STP30N STP30N06 STP30N06FI DD 127 D TRANSISTOR JIS B 0409

    tt2201

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON stpsnaso iL iO M iQ £ I S T P 8 N A5 0 F I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8N A50FI V dss R DS(on) Id 500 V 500 V < 0.85 a < 0.85 a 8 A 4.5 A . T Y P IC A L R Ds (on) = 0.7 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING


    OCR Scan     		PDF STP8NA50 A50FI tt2201

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON VB921Z VB921ZFI Rl M[EL[iOT KS HIGH VOLTAGE IGNITION COIL DRIVER PO W ER IC ADVANCE DATA . . • . NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB921Z and VB921ZFI are monolithic high


    OCR Scan     		PDF VB921Z VB921ZFI VB921Z VB921ZFI

    RF540

    Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
    Text: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q


    OCR Scan     		PDF 540/FI-541/FI 542/FI-543/FI IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI RF540 b17a q02c IRF540 application

    BUZ11

    Abstract: BUZ11FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche
    Text: = 7 SGS-THOMSON kT # BUZ11 B U Z 1 1 FI RjlOICœiilLKB'f IBOMDei N - C HANNEL EN H A N C EM EN T MODE PO W ER MOS TR A N SISTO R S TYPE BU Z11 BU Z11FI • . . . . . . V dss R DS on Id 50 V 50 V < 0 .0 4 Q. < 0 .0 4 Q. 36 A 21 A TY P IC A L R D S (on) = 0.03


    OCR Scan     		PDF BUZ11 BUZ11FI O-220 ISOWATT220 BUZ11FI BUZ11/FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche

    T410

    Abstract: Triac T435 triac 800V 1A WT-410
    Text: f= 7 ^ •T # S G S -T H O M S O N T 4 io M E E S m iig T O iM tg S _ T 4 3 5 HIGH PERFORMANCE TRIACS FEATURES 4A • V drm = 400 V to 800 V . SENSITIVE GATE : lGT< 1 0 m A . HIGH COMMUTATION : dl/dt c>3.5 A/ms ■ ITRM S = DESCRIPTION The T410 / T435 high voltage TRIAC Families


    OCR Scan     		PDF T0220AB, OT194 ISOWATT220AB 194/SO ATT220AB T410 Triac T435 triac 800V 1A WT-410

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s tp 2 5 n o6 ilLiCTIIMDe STP25N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N 06 S TP25N 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0.065 a < 0.065 a 25 A 16 A T Y P IC A L RDS(on) = 0.048 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF STP25N TP25N

    Triac T405

    Abstract: M/T405
    Text: / = 7 SGS-THOMSON ^ 7# Ik LHÈTTMIiDgi T405 HIGH PERFORMANCE TRIACS FEATURES 4A • V drm = 400 V to 600 V . SENSITIVE GATE: IGt < 5 mA ■ LOW Ih < 10 mA ■ ITRM S = DESCRIPTION The T405 high voltage TRIAC Families are high performance planar diffused PNPN devices


    OCR Scan     		PDF T0220AB, OT194 ISOWATT220AB 194/SO ATT220AB Triac T405 M/T405

    IRF74Q

    Abstract: IRF 740 N transistor irf 740 IRF740FI IRF743 IRF 740 IRFJ40 IRF741 ci 741 IRF740
    Text: 3GE P • 7^2^237 G02cîô01 T ■ [Z T S G S -T H O M S O N 4 7#b S G S-THOMSON TYPE IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI Vqss 400 V 400 V 350 V 350 V 400 V 400 V 350 V 350 V 'T - 'S eî - \ 3 IRF 740/FI-741/FI IRF 742/FI-743/FI


    OCR Scan     		PDF 740/FI-741/FI 742/FI-743/FI IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI IRF74Q IRF 740 N transistor irf 740 IRF 740 IRFJ40 ci 741

    TT220

    Abstract: TP15N05L
    Text: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI


    OCR Scan     		PDF MTP15N05L/FI MTP15N06L/FI MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI TT220 500ms TT220 TP15N05L

    RE540

    Abstract: stp7n
    Text: SGS-THOMSON * 5 7NA40 STP7N A40FI stp iLiO M iQ £I 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA40 STP7N A40FI • • . ■ ■ . ■ V dss R DS(on) Id 400 V 400 V < 1a < 1a 6.5 A 4.1 A T Y P IC A L RDS(on) = 0.82 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING


    OCR Scan     		PDF 7NA40 A40FI STP7NA40 RE540 stp7n

    MTP3N6

    Abstract: No abstract text available
    Text: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS


    OCR Scan     		PDF MTP3N60 MTP3N60FI TP3N60 TP3N60FI 100KHz ATT22Q 500ms MTP3N6

    TT220

    Abstract: transistor IRF 531 IRF 530 transistor 531
    Text: rZ 7 SGS-THOMSON A T Æ . IRF 530/FI-531/FI IRF 532/FI-533/FI IH D Ê IM ÎIlL U tô M K O D È S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA • • • • TYPE V DSS R DS on IRF530 IRF530FI 100 V 100 V 0.16 0.16 IRF531 IRF531FI


    OCR Scan     		PDF 530/FI-531/FI 532/FI-533/FI IRF530 IRF530FI IRF531 IRF531FI IRF532 IRF532FI IRF533 IRF533FI TT220 transistor IRF 531 IRF 530 transistor 531

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON iL iO M K I stp36Nosl STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF 36Nosl STP36N05LFI STP36N05L STP36N 05LFI

    rf620

    Abstract: No abstract text available
    Text: *57 IR F 620 IR F 6 2 0 F I S G S -T H O M S O N iL iO M K I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 620 IR F 620 F I 1 . 1 . V dss RDS on Id 200 V 200 V < 0 .8 £2 < 0.8 a 6 A 4 A T Y P IC A L R Ds(on) = 0.55 A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF

    36N06

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON iL iO M K I stp36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF 36N06L STP36N06LFI STP36N05L STP36N 05LFI 36N06

    OT 306

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s t p 3 6 n o6 STP36N 06FI ilLiCTIIMDe N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0 .0 4 a < 0 .0 4 a 36 A 21 A T Y P IC A L RDS(on) = 0.03 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF STP36N STP36N06 STP36N06FI OT 306

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s tp 3 0 n 0 5 ilLiCTIIMDe STP30N 05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N 05 S TP30N 05FI • • . ■ ■ . ■ ■ V dss R DS on Id 50 V 50 V < 0.05 a < 0.05 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF STP30N TP30N

    p15n05

    Abstract: C5443 5N05L 5N05 15N05L 15n05 CS4420 P15N05L
    Text: *57 SGS-THOMSON stp 15no5l ilLiCTIIMDe S T P 1 5 N 05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 15N05L S T P 15N05LFI • . . ■ ■ . ■ ■ V dss R DS on 50 V 50 V < 0.15 a < 0.15 a Id 15 10 A A T Y P IC A L RDS(on) = 0.115 £2


    OCR Scan     		PDF 15no5l 05LFI 15N05L 15N05LFI p15n05 C5443 5N05L 5N05 15n05 CS4420 P15N05L