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    STMicroelectronics STP30N20

    MOSFET N-CH 200V 30A TO220AB
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    onsemi NTP30N06

    MOSFET N-CH 60V 27A TO220AB
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    onsemi NTP30N20G

    MOSFET N-CH 200V 30A TO220AB
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    onsemi NTP30N06L

    MOSFET N-CH 60V 30A TO220AB
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    STMicroelectronics STP30NM50N

    MOSFET N-CH 500V 27A TO220-3
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    Chip1Stop STP30NM50N 949
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    TP30N Datasheets Context Search

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    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP30N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP30N 06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		PDF MTP30N06VL/D TP30N 21A-06

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « TP30N06 TP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E TP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		PDF STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E TP30N05 S TP30N05FI SGS-THOMSON ¡m era « TP30N05 TP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		PDF STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220

    HI SPEED, HI CURRENT, TO-220, TRANSISTOR

    Abstract: No abstract text available
    Text: SGS-THOMSON IIL IIO T *! TP30N05 TP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP30N 05 S TP30N 05FI V dss RDS on 50 V 50 V 0 .0 5 n 0 .0 5 Q Id ' 30 A 18 A . • . . . . AVALANCHE RU G G EDN ESS TECHNOLOG Y 100% AVALANCHE TESTED


    OCR Scan     		PDF STP30N05 STP30N05FI TP30N ATT220 STP30N05/FI HI SPEED, HI CURRENT, TO-220, TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s tp 3 0 n 0 5 ilLiCTIIMDe TP30N 05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE TP30N 05 S TP30N 05FI • • . ■ ■ . ■ ■ V dss R DS on Id 50 V 50 V < 0.05 a < 0.05 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF STP30N TP30N

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


    OCR Scan     		PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E

    Untitled

    Abstract: No abstract text available
    Text: TP30NE06 TP30NE06FP N - CHANNEL 60V - 0.042 Q - 30A - T0-220/T0-220FP _ STripFET POWER MOSFET PRELIM IN A R Y DATA TYPE V dss R D S o n Id TP30N E06 TP30NE06FP 60 V 60 V < 0 .0 5 0 Q < 0 .0 5 0 Q 30 A 17 A . TYPICAL RDS(on) = 0.042 Q


    OCR Scan     		PDF STP30NE06 STP30NE06FP T0-220/T0-220FP STP30N

    Untitled

    Abstract: No abstract text available
    Text: TP30NE06 TP30NE06FP N - CHANNEL 60V - 0.042 £2 - 30A - T0-220/T0-220FP _ STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id TP30NE06 TP30NE06FP 60 V 60 V < 0 .0 5 0 Q. < 0 .0 5 0 Q, 30 A 17 A . TYPICAL Ros(on) = 0.042 Ç1


    OCR Scan     		PDF STP30NE06 STP30NE06FP T0-220/T0-220FP STP30NE06/FP O-22QFP

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    MTP3055EL

    Abstract: MTP n-channel mosfet to 220 TD3055EL 221A-06 TP12N10 Power MOSFETs Cross Reference Guide motorola TO-252 TP25N10
    Text: TT TMOS TMOS Power MOSFETs Logic Level Power MOSFETs ISOLATED TO-220 CASE 221D-02 MTA PREFIX T0-220AB CASE 221A-06 (MTP PREFIX TO-251* CASE 369-05 (MTD PREFIX) TO-252 CASE 369A-09 (MTD PREFIX) Logic level M O SFETs are fu lly en ha nce d w ith 5 volts applied to the gate.


    OCR Scan     		PDF O-220 221D-02 T0-220AB 21A-06 O-251* O-252 69A-09 O-22QAB) TP12N10EL TA11N10ELSÙ MTP3055EL MTP n-channel mosfet to 220 TD3055EL 221A-06 TP12N10 Power MOSFETs Cross Reference Guide motorola TO-252 TP25N10

    Kelvin KM 300 resistor

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F b3b7254 □ Ü ‘i67ô4 ÔT1 • M O T b bflE D MOTOROLA m SEM IC O N D U C T O R i TECHNICAL DATA TP30N08M P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-M ode S ilicon G ate w ith C u rren t Sensing C apability


    OCR Scan     		PDF b3b7254 Kelvin KM 300 resistor

    MTP30N08M

    Abstract: AN569 MC34129 sensefet high voltage current mirror mosfet current mirror 314B03
    Text: M O T O R O L A SC X S T R S / R F b 3 b 7 2 5 4 □ Ü ‘iô7ô4 ôTl • MOTb bflE » MOTOROLA SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor IM-Channel Enhancement-Mode Silico n Gate w ith Current Sensing Capability TM OS S E N S E F E T DEVICE


    OCR Scan     		PDF MC34129 MTP30N08M AN569 sensefet high voltage current mirror mosfet current mirror 314B03

    12N60FI

    Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90


    OCR Scan     		PDF 2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118 2SK1119 2SK1120 2SK1154 2SK1156 12N60FI K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL

    7N90FI

    Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
    Text: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0


    OCR Scan     		PDF TP40N STP45N 05LFI Z11FI TP30N STK22N STP25N 7N90FI 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


    OCR Scan     		PDF 2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code

    Untitled

    Abstract: No abstract text available
    Text: P I SGS-TUOMSON TP30N06 TP30N06FI I1LìI O T 2 *S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE TP30N06 TP30N 06FI V dss RoS(on 60 V 60 V 0.05 0.05 n il Id 30 A 18 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STP30N06 STP30N06FI STP30N O-220 ISOWATT220 STP30N06/FI