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    ATC600F3R3BT250XT Search Results

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    Kyocera AVX Components 600F3R3BT250XT

    Silicon RF Capacitors / Thin Film 250volts 3.3pF NP0
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    Mouser Electronics 600F3R3BT250XT 2,460
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    TTI 600F3R3BT250XT Reel 19,000 500
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    ATC600F3R3BT250XT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth


    Original     		PDF MRF8P23160WH MRF8P23160WHR3 MRF8P23160WHSR3 MRF8P23160WHR3

    MD8IC970NR1

    Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT

    gsc3

    Abstract: GRM188R71C104K01D ATC600F4R7BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970NR1 MD8IC970N gsc3 GRM188R71C104K01D ATC600F4R7BT250XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.


    Original     		PDF MMRF1013H MMRF1013HR5 MMRF1013HSR5 MMRF1013HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970N MD8IC970NR1 MD8IC970GNR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3

    T491C106K050AT

    Abstract: ATC600F1R0BT250XT Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3 T491C106K050AT ATC600F1R0BT250XT Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6S9201H

    T491C106K050AT

    Abstract: A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 ATC600F4R7BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3 T491C106K050AT A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HSR3 ATC600F4R7BT250XT

    81A7031-50-5F

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F

    MRF8P23160WHSR

    Abstract: MRF8P23160WHR3 MRF8P23160WHS C3225X7R2A106KT tuner 2300 cw120 J-038
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth


    Original     		PDF MRF8P23160WH MRF8P23160WHR3 MRF8P23160WHSR3 MRF8P23160WHSR MRF8P23160WHS C3225X7R2A106KT tuner 2300 cw120 J-038

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6

    ATC600S470JT250XT

    Abstract: SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 1, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970N MD8IC970NR1 ATC600S470JT250XT SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35

    MRF8P29300H

    Abstract: ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6 MRF8P29300H ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT