Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage
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MD7IC2251N
MD7IC2251N
MD7IC2251NR1
MD7IC2251GNR1
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j327
Abstract: j327 transistor AFT09S282 transistor j326 J161 mosfet transistor j334 AFT09S282NR3 ATC600F4R7BT250XT AFT09S282N
Text: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
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AFT09S282N
AFT09S282NR3
AFT09S282N
j327
j327 transistor
AFT09S282
transistor j326
J161 mosfet transistor
j334
AFT09S282NR3
ATC600F4R7BT250XT
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MD8IC970NR1
Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage
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MD8IC970N
MD8IC970NR1
MD8IC970GNR1
GRM31MR71H105KA88L
MD8IC
SG73P2AT
ipc sm 840
GRM188R71C104K01D
ATC600F4R7BT250XT
TO270
ATC600S5R6JT250XT
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GRM31CR61H225KA88L
Abstract: j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050GNR1 MD7IC2050NBR1 MD7IC2050NR1 A114
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage
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MD7IC2050N
MD7IC2050N
MD7IC205ubsidiaries,
MD7IC2050NR1
MD7IC2050GNR1
MD7IC2050NBR1
GRM31CR61H225KA88L
j692
AN1955
AN1977
AN1987
JESD22
MD7IC2050NBR1
A114
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gsc3
Abstract: GRM188R71C104K01D ATC600F4R7BT250XT
Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage
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MD8IC970N
MD8IC970NR1
MD8IC970N
gsc3
GRM188R71C104K01D
ATC600F4R7BT250XT
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ATC600F4R7BT250XT
Abstract: ATC600F390JT250XT
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage
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MD7IC2251N
MD7IC2251NR1
MD7IC2251GNR1
ATC600F4R7BT250XT
ATC600F390JT250XT
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Untitled
Abstract: No abstract text available
Text: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage
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MD7IC2050N
MD7IC2050N
MD7IC2050NR1
MD7IC2050GNR1
MD7IC2050NBR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
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AFT09S282N
AFT09S282NR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage
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MD8IC970N
MD8IC970N
MD8IC970NR1
MD8IC970GNR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with
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MRFE6S9201H
MRFE6S9201HR3
MRFE6S9201HSR3
MRFE6S9201HR3
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T491C106K050AT
Abstract: ATC600F1R0BT250XT Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with
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MRFE6S9201H
MRFE6S9201HR3
MRFE6S9201HSR3
MRFE6S9201HR3
T491C106K050AT
ATC600F1R0BT250XT
Chemi-Con DATE CODES
A114
A115
AN1955
C101
JESD22
MRFE6S9201H
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T491C106K050AT
Abstract: A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 ATC600F4R7BT250XT
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with
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MRFE6S9201H
MRFE6S9201HR3
MRFE6S9201HSR3
MRFE6S9201HR3
T491C106K050AT
A114
A115
AN1955
C101
JESD22
MRFE6S9201H
MRFE6S9201HSR3
ATC600F4R7BT250XT
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81A7031-50-5F
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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A2T07D160W04S
A2T07D160W04SR3
81A7031-50-5F
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GSC351-HYB1900
Abstract: J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin MD7IC2050GNR1
Text: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage
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MD7IC2050N
MD7IC2050N
MD7IC2050NR1
MD7IC2050GNR1
MD7IC2050NBR1
GSC351-HYB1900
J3328
GRM31CR61H225K
j692
J3027
AN1955
AN1977
AN1987
Soshin
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ATC600S470JT250XT
Abstract: SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35
Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 1, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage
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MD8IC970N
MD8IC970N
MD8IC970NR1
ATC600S470JT250XT
SG73P2AT
GRM31MR71H105KA88L
GRM188R71C104K01D
RK73H2ATTD10R0F
Soshin GSC362
J506 equivalent
SG73P2ATTD
Rogers RO4350B
R8C35
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