Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0334_3 ] 2013/10/16 Ultra Violet Laser Diode NDU4316E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 390-400nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm (
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UTZ-SC0334
NDU4316E
CW120mW
390-400nm
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UTZ-SC0331
Abstract: ndv4916e NM424
Text: [ UTZ-SC0331_2 ] 2012/10/02 Violet Laser Diode NDV4916E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 410-420nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm ( + .03
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UTZ-SC0331
NDV4916E
CW120mW
410-420nm
ndv4916e
NM424
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UTZ-SC0332
Abstract: No abstract text available
Text: [ UTZ-SC0332_2 ] 2012/10/02 Violet Laser Diode NDV4A16E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 420-425nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm ( + .03
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UTZ-SC0332
NDV4A16E
CW120mW
420-425nm
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NDV4313
Abstract: Nichia 405 120 mW 405nm photodiode Nichia 405 nm laser laser diode 405nm Nichia laser 405 nichia laser diode IEC60825-1 Nichia 405 violet laser diode
Text: [ UTZ-SC0134_3 ] 2008/02/22 Violet Laser Diode NDV4313 Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 405nm • Can Type:φ5.6 with Photo Diode Unit mm + .03 - ( 1.6 ) Φ Φ 5.6 (90° ) Absolute Maximum Ratings (Tc=25°C)
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UTZ-SC0134
NDV4313
CW120mW
405nm
NDV4313
Nichia 405 120 mW
405nm photodiode
Nichia 405 nm laser
laser diode 405nm
Nichia laser 405
nichia laser diode
IEC60825-1
Nichia 405
violet laser diode
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Nichia 405 nm laser
Abstract: Nichia laser laser diode 405nm NDV4316 Nichia laser 405 UTZ-SC0338
Text: [ UTZ-SC0338_2 ] 2013/01/09 Violet Laser Diode NDV4316 Outline Dimension Features 1.6 + .03 5.6 Unit (mm) Φ • Optical Output Power: CW120mW • Peak Wavelength: 405nm • Can Type: φ5.6 Floating Mounted with Photo Diode and Zener Diode Φ (90°) Emitting Point
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UTZ-SC0338
NDV4316
CW120mW
405nm
Nichia 405 nm laser
Nichia laser
laser diode 405nm
NDV4316
Nichia laser 405
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0334_3 ] 2013/10/16 Ultra Violet Laser Diode NDU4316E Engineering Sample Features Outline Dimension • Optical Output Power: CW120mW • Peak Wavelength: 390-400nm • Can Type:5.6 Floating Mounted with Photo Diode and Zener Diode
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UTZ-SC0334
NDU4316E
CW120mW
390-400nm
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CW1200
Abstract: CG2900 AMPLIFIER 5GHZ wifi wifi 2.4 ghz Coexistence STLC4560 SMPS CIRCUIT DIAGRAM USING TRANSISTORS WiFi block diagram bluetooth test mode ericsson switch
Text: CW1200 - IEEE 802.11abgn WLAN Extended battery life in connected mobile devices The CW1200 is a single-chip Wi-Fi device with integrated power amplifier PA that reduces footprint and increases battery life for mobile devices. Advanced features extend range and performance in multi-radio platforms.
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CW1200
11abgn
IEEE802
11abgn
Symbian/S60,
CW1200FL
CG2900
AMPLIFIER 5GHZ wifi
wifi 2.4 ghz
Coexistence
STLC4560
SMPS CIRCUIT DIAGRAM USING TRANSISTORS
WiFi block diagram
bluetooth test mode
ericsson switch
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0332_2 ] 2012/10/02 Violet Laser Diode NDV4A16E Engineering Sample Features Outline Dimension • Optical Output Power: CW120mW • Peak Wavelength: 420-425nm • Can Type:5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm
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UTZ-SC0332
NDV4A16E
CW120mW
420-425nm
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0331_2 ] 2012/10/02 Violet Laser Diode NDV4916E Engineering Sample Features Outline Dimension • Optical Output Power: CW120mW • Peak Wavelength: 410-420nm • Can Type:5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm
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UTZ-SC0331
NDV4916E
CW120mW
410-420nm
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0338_2 ] 2013/01/09 Violet Laser Diode NDV4316 Features Outline Dimension 1. 6 + .0 3 6 5. Unit (mm) Φ • Optical Output Power: CW120mW • Peak Wavelength: 405nm • Can Type:5.6 Floating Mounted with Photo Diode and Zener Diode
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UTZ-SC0338
NDV4316
CW120mW
405nm
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NDU4316E
Abstract: Nichia laser UTZ-SC0334 39-040-0
Text: [ UTZ-SC0334_2 ] 2012/10/02 Ultra Violet Laser Diode NDU4316E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 390-400nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm (
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UTZ-SC0334
NDU4316E
CW120mW
390-400nm
NDU4316E
Nichia laser
39-040-0
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20161HS
MRF8P20161HSR3
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ATC600F0R1BT250XT
Abstract: No abstract text available
Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
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MRF8P18265H
MRF8P18265HR6
MRF8P18265HSR6
ATC600F0R1BT250XT
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth
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MRF8P23160WH
MRF8P23160WHR3
MRF8P23160WHSR3
MRF8P23160WHR3
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Untitled
Abstract: No abstract text available
Text: ATC HIGH POWER RESISTIVE Surface Mount Chip Resistors Style CS Top View Style CS1 and Style CW General Specifications • Resistance: 100 Ω standard, other Ω values available • Resistive Tolerance: ±2% standard • Temperature Coefficient: <150 ppm/˚C
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MIL-PRF-55342
CS12010TxxxxG
CS12525TxxxxG
CS13725TxxxxG
CS13737TxxxxG
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Untitled
Abstract: No abstract text available
Text: ATC HIGH POWER RESISTIVE Surface Mount Chip Resistors Style CS Top View Style CS1 and Style CW1 General Specifications • Resistance: 100 Ω standard, other Ω values available • Resistive Tolerance: ±2% standard • Temperature Coefficient: <150 ppm/˚C
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MIL-PRF-55342
CS12010TxxxxG
CS12525TxxxxG
CS13725TxxxxG
CS13737TxxxxG
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mosfet J442
Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20161HS
MRF8P20161HSR3
mosfet J442
ATC600F2R0BT250XT
J442
CW12010T0050G
ATC600F100JT250XT
CW12010T0050GBK
AN1955
96VDD
J596
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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AFT20P140--4WN
AFT20P140-4WNR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to
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A2T26H160--24S
A2T26H160-24SR3
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LTE impedance tuner
Abstract: MRF8HP21080 CW12010T0100G MRF8HP21080HR3 J952 j179 j934 CW12010T0100GBK J9-22 j922
Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
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MRF8HP21080H
MRF8HP21080HR3
MRF8HP21080HSR3
LTE impedance tuner
MRF8HP21080
CW12010T0100G
J952
j179
j934
CW12010T0100GBK
J9-22
j922
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luxtron 800
Abstract: fr108 FT10301N0050J FT10800N0050J02 FT10515N0050J DK004 LT11020T0050J FT103 ft10515n0050j01 resistor catalog
Text: AMERICAN TECHNICAL CERAMICS HIGH POWER RESISTIVE PRODUCTS AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Table of Contents ATC: Company
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MOSFET J162
Abstract: CW12010T0050G
Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to
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AFT26H160--4S4
AFT26H160-4S4R3
MOSFET J162
CW12010T0050G
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CW12010T0100G
Abstract: CW11005T0100G CW13725 lt 010 RO-4350 CW1100 RO4350 CW12525
Text: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Surface Mount Chip Resistors Top View Overcoat Style CW General Specifications • Resistance: 50 and 100 Ω standard. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C
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MIL-PRF-55342
CW11005T0100G
CW12010T0100G
CW12525T0100G
CW13725T0100G
CW13737T0100G
CW13725
lt 010
RO-4350
CW1100
RO4350
CW12525
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Untitled
Abstract: No abstract text available
Text: AURORA, IL. 60 5 0 5 CONNOR-W INFIELD PHONE 6 3 0 8 5 1 - 4 7 2 2 CORPORATION H C 4 9 /U FAX (6 3 0 ) 8 5 1 - 5 0 4 0 QUARTZ CRYSTAL UNIT CW120 12 .0 0 0 0 0 0 MHz SPECIFICATIONS Frequency Holder Style Mode o f O scillation Tolerance @25'C O'C to +7CTC Tolerance
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OCR Scan
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CW120
50ppm
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