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    TDK Corporation C3225JB2A105K200AA

    CAP CER 1UF 100V JB 1210
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    DigiKey C3225JB2A105K200AA Cut Tape 318 1
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    C3225JB2A105K200AA Digi-Reel 318 1
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    Avnet Americas C3225JB2A105K200AA Reel 36 Weeks 1,000
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    C3225JB2A105K Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C3225JB2A105K200AA TDK Ceramic Capacitors, Capacitors, CAP CER 1UF 100V 10% JB 1210 Original PDF

    C3225JB2A105K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    C3216X7R2J472M115AA

    Abstract: C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Mid Voltage 100 to 630V Capacitors Type: Issue date: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] January 2013 TDK MLCC Global Catalog


    Original     		PDF C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C3216X7R2J472M115AA C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb

    C3225X7R2A334K

    Abstract: C3225X7R2A225K C3225 CC1210 C3225X7R2A105K C3225C0G2A223J
    Text: 1/3 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.


    Original     		PDF

    C5750JF1H226ZT

    Abstract: AN3263 C3225JB2A105KT tdk MRF6V4300N MRF6V4300NBR1 JESD22-A113 Resistor mttf C3225JB2A105KT AN1955 MRF6V4300NR1
    Text: Document Number: MRF6V4300N Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 C5750JF1H226ZT AN3263 C3225JB2A105KT tdk MRF6V4300N MRF6V4300NBR1 JESD22-A113 Resistor mttf C3225JB2A105KT AN1955

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Mid Voltage 100 to 630V Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Oct 2013 004-01 / 20131003 / mlcc_commercial_midvoltage_en


    Original     		PDF C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210]

    AN3263

    Abstract: MRF6V4300N AN1955 MRF6V4300NBR1 MRF6V4300NR1 C3225JB2A105KT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 AN3263 MRF6V4300N AN1955 MRF6V4300NBR1 C3225JB2A105KT

    T68000

    Abstract: c2012jb c3225 transistor C5750JB2J224K C1608 X7R C1608 C3225 C4532 C5750 CC0603
    Text: 1/8 Mid Voltage Multilayer Ceramic Chip Capacitors C Series FEATURES • The unique design structure for mid voltage enables a compact size with high voltage withstanding. • Rated voltage Edc: 100, 250 and 630V. • C3225, C4532 and C5750 types are specific to reflow soldering.


    Original     		PDF C3225, C4532 C5750 digit50JB2A684K C5750JB2A684M C5750JB2A105K C5750JB2A105M C5750JB2A155K C5750JB2A155M C5750JB2A225K T68000 c2012jb c3225 transistor C5750JB2J224K C1608 X7R C1608 C3225 CC0603

    C3225JB2A474K

    Abstract: C3225X5R2A225K C3225C0G2J682J C3225JB2A105M
    Text: 11/16 C Series C3225 (EIA CC1210) Type Conformity to RoHS Directive FEATURES • The unique design structure for mid voltage enables a compact size with high voltage withstanding. • Rated voltage Edc: 100, 250 and 630V. • C3225 type is specific to reflow soldering.


    Original     		PDF C3225 CC1210) C3225 60ppm/ 30ppm/ 8A105K C3225JB2A105M C3225JB2A155K C3225JB2A155M C3225JB2A225K C3225JB2A474K C3225X5R2A225K C3225C0G2J682J

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    CC0603

    Abstract: C1608 C5750JB2A475K C3216X7R2A105M
    Text: 1/16 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.


    Original     		PDF MMRF1013H MMRF1013HR5 MMRF1013HSR5 MMRF1013HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6

    C3225JB2A474K

    Abstract: C3225X7R2A225K C3225JB2A225K C3225X7R2A105K C3225JB2A105K C3225X7R2E104K C3225C0G2E103J C3225 CC1210 C3225X5R2A155K
    Text: 1/3 ご使用上の注意事項 本製品をご使用の前に必ずお読みください。 安全上のご注意 注 意 1. 本カタログに記載の製品を人命または社会的に甚大な損失を与える恐れのある用途でご使用をご検討される場合には必ず弊


    Original     		PDF CC3225 CC1210) 00250630V 60ppm/ 30ppm/ 700pF 000pF Direct225X7R2A334K C3225JB2A474K C3225X7R2A225K C3225JB2A225K C3225X7R2A105K C3225JB2A105K C3225X7R2E104K C3225C0G2E103J C3225 CC1210 C3225X5R2A155K

    Untitled

    Abstract: No abstract text available
    Text: 1/8 Mid Voltage Multilayer Ceramic Chip Capacitors C Series FEATURES • The unique design structure for mid voltage enables a compact size with high voltage withstanding. • Rated voltage Edc: 100, 250 and 630V. • C3225, C4532 and C5750 types are specific to reflow soldering.


    Original     		PDF C3225, C4532 C5750 C5750JB2A684M C5750JB2A105K C5750JB2A105M C5750JB2A155K C5750JB2A155M C5750JB2A225K C5750JB2A225M

    TDK Ferrite Balun

    Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 TDK Ferrite Balun FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP

    CC5750

    Abstract: C3216X7R2J102M C5750X7R2A105K c2012x7r2e223k C3216C0G2J681J C1608 c3216c0g C3216 C3225 C5750
    Text: 積層セラミックチップコンデンサ 中耐圧 C シリーズ Type: C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: April 2007 ●製品をより正しく安全にご使用いただくために、さらに詳細な特性・仕様をご確認いただける納入仕様書をぜひご請求ください。


    Original     		PDF C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] CC5750 C3216X7R2J102M C5750X7R2A105K c2012x7r2e223k C3216C0G2J681J c3216c0g C5750

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Mid Voltage 100 to 630V Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Jan 2014 005-01 / 20140112 / mlcc_commercial_midvoltage_en


    Original     		PDF C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210]

    C5750JF1H226ZT

    Abstract: C3225JB2A105KT AN3263 C3225CH2A153JT C3225JB2A105KT tdk ATC100B510JT500XT A113 A114 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 0, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 C5750JF1H226ZT C3225JB2A105KT AN3263 C3225CH2A153JT C3225JB2A105KT tdk ATC100B510JT500XT A113 A114 AN1955 C101

    mrfe6vp61k25h

    Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1

    D260-4118-0000

    Abstract: 0119A 0190A
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6