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    ATC100A101JP150X Price and Stock

    American Technical Ceramics Corp ATC100A101JP150X

    Capacitor, Porcelain, 100pf, 150V, .5+pf, 5±%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A101JP150X 16
    • 1 $1.5
    • 10 $1.25
    • 100 $0.9
    • 1000 $0.9
    • 10000 $0.9
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    ATC100A101JP150X 43
    • 1 $14.8092
    • 10 $9.8728
    • 100 $9.1323
    • 1000 $9.1323
    • 10000 $9.1323
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    ATC100A101JP150X 43
    • 1 $14.8092
    • 10 $9.8728
    • 100 $9.1323
    • 1000 $9.1323
    • 10000 $9.1323
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    American Technical Ceramics Corp ATC100A101JP150XT

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0001 uF, SURFACE MOUNT, 0606
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A101JP150XT 520
    • 1 $2.64
    • 10 $2.64
    • 100 $2.64
    • 1000 $1.089
    • 10000 $1.089
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    ATC100A101JP150XT 520
    • 1 $2.64
    • 10 $2.64
    • 100 $2.64
    • 1000 $1.089
    • 10000 $1.089
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    ATC100A101JP150X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14

    ATC100A101JP150X

    Abstract: mosfet power amplifier TRF7003 GRM220Y5V105Z010 GRM220Y GRM220 SOT-89 RPSS
    Text: TRF7003 MOSFET POWER AMPLIFIER SLWS058B – APRIL 1997 – REVISED MARCH 1998 D D D D D D D D PK PACKAGE TOP VIEW Wide Operating Frequency Range up to 1000 MHz High Output Power: Typical Value of 32.5 dBm at 4.8 V and 900 MHz Typical Value of 29 dBm at 3.6 V


    Original     		PDF TRF7003 SLWS058B OT-89 TRF7003 ATC100A101JP150X mosfet power amplifier GRM220Y5V105Z010 GRM220Y GRM220 SOT-89 RPSS

    MOSFET Power Amp

    Abstract: SLWS058C ATC100A101JP150 TRF7003 GRM220Y5V105Z010 ATC100A101JP150X
    Text: TRF7003 MOSFET POWER AMPLIFIER SLWS058C – APRIL 1997 – REVISED JULY 1998 D D D D D D D D D D PK PACKAGE TOP VIEW Wide Operating Frequency Range up to 1000 MHz High Output Power: – Typical Value of 32 dBm at 4.8 V and 900 MHz – Typical Value of 29 dBm at 3.6 V and


    Original     		PDF TRF7003 SLWS058C 32-dBm OT-89 TRF7003 MOSFET Power Amp SLWS058C ATC100A101JP150 GRM220Y5V105Z010 ATC100A101JP150X

    ATC600F1R8BT250XT

    Abstract: ATC600F220JT250XT lte reference design ATC100A100JP150X MMG3014N ATC200B393KP50XT ATC100A101JP150X
    Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically


    Original     		PDF 74claims, MMG3014N MRFG35010AN ATC600F1R8BT250XT ATC600F220JT250XT lte reference design ATC100A100JP150X ATC200B393KP50XT ATC100A101JP150X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically


    Original     		PDF MMG3014N MRFG35010AN

    RO4350B

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B