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    Kyocera AVX Components 100B0R3BT500XT

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    303 2170 001

    Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		PDF AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR3 AFT21S230SR3 AFT21S230-12SR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-


    Original     		PDF MW7IC915N MW7IC915N MW7IC915NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H

    j292

    Abstract: aft23h200-4s2l
    Text: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT23H200-4S2L AFT23H200-4S2LR6 j292

    transistor j241

    Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
    Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448

    MRF6V10010NR4

    Abstract: AN1955 d2460 A03TK
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010NR4 AN1955 d2460 A03TK

    C5750X5R1H106MT

    Abstract: MRF7S21210HS S2116
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 C5750X5R1H106MT MRF7S21210HS S2116

    transistors BC 458

    Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 transistors BC 458 BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22

    MMRF1019NR4

    Abstract: No abstract text available
    Text: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MMRF1019N MMRF1019NR4 7/2014Semiconductor, MMRF1019NR4

    j821

    Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 j821 MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range


    Original     		PDF MMRF1020--04N MMRF1020-04NR3 MMRF1020-04GNR3

    mrf8s21140hs

    Abstract: MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L MRF8S21140HR3 j491
    Text: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21140H MRF8S21140HR3 MRF8S21140HSR3 MRF8S21140HR3 mrf8s21140hs MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L j491

    DB3-5D

    Abstract: ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19260H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multi - carrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6 DB3-5D ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6

    J717

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 J717

    AFT21S230S

    Abstract: aft21s232s C5750X7S2A106M
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S232SR3 aft21s232s C5750X7S2A106M

    HSR6

    Abstract: IRL96 J637
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 0, 10/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HSR6 MRF8S21200H HSR6 IRL96 J637

    ATC100B0R5BT500XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on-chip matching that makes it usable at 2450 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical


    Original     		PDF MW6IC2420N MW6IC2420NB MW6IC2420NBR1 MW6IC2420N ATC100B0R5BT500XT

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 0, 10/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S232SR3