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Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to	Original	PDF	MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 10yees, MRF7P20040HR3
mrf8s21140hs Abstract: MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L MRF8S21140HR3 j491 Text: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	PDF	MRF8S21140H MRF8S21140HR3 MRF8S21140HSR3 MRF8S21140HR3 mrf8s21140hs MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L j491
AN1955 Abstract: j1303 C3225X7R1H225KT RO4350B Rogers RO4350B CRCW12061000FKEA atc600f1r1at250xt tdk 2025 A114 A115 Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to	Original	PDF	MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 AN1955 j1303 C3225X7R1H225KT RO4350B Rogers RO4350B CRCW12061000FKEA atc600f1r1at250xt tdk 2025 A114 A115
AN1955 Abstract: MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 1, 8/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to	Original	PDF	MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 AN1955 MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA
Untitled Abstract: No abstract text available Text: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	PDF	MRF8S21140H MRF8S21140HR3 MRF8S21140HSR3 MRF8S21140HR3
MRF7P20040H Abstract: AN1955 MRF7P20040HSR3 J1311 Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to	Original	PDF	MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 MRF7P20040H AN1955 MRF7P20040HSR3 J1311