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    HSR6 Search Results

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    HSR6 Price and Stock

    Belden Inc HSR6RGBL

    SNSRM6R/G/BL 6-PK RETAIL
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    NXP Semiconductors MRF6VP41KHSR6

    RF MOSFET LDMOS 50V NI1230
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    NXP Semiconductors MRF8P8300HSR6

    RF MOSFET LDMOS 28V NI1230
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    Flip Electronics MRF8P8300HSR6 1,950
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    Flip Electronics MRF8P8300HSR6

    RF MOSFET LDMOS 28V NI1230
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    NXP Semiconductors MRF8P29300HSR6

    RF MOSFET LDMOS 30V NI1230
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    HSR6 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HSR601 Diodes HIGH SPEED SOFT RECOVERY RECTIFIERS Scan PDF
    HSR602 Diodes HIGH SPEED SOFT RECOVERY RECTIFIERS Scan PDF
    HSR603 Diodes HIGH SPEED SOFT RECOVERY RECTIFIERS Scan PDF
    HSR604 Diodes HIGH SPEED SOFT RECOVERY RECTIFIERS Scan PDF
    HSR605 Diodes HIGH SPEED SOFT RECOVERY RECTIFIERS Scan PDF
    HSR-630RT Hermetic Switch Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Switch, Reed, Standard, Rhodium Contacts, Tin-plated External Leads Scan PDF

    HSR6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H

    303 2170 001

    Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6

    Untitled

    Abstract: No abstract text available
    Text: HSR-634WT S W I T C HI N G T HE S M A R T WAY HSR-634WT Leistungs-Wechslerkontakt Elektrische Daten @ 25 °C Kontaktform Features C Kontaktmaterial Leistungswechsler mit Wolframkontakten W* Schaltleistung max. Schaltspannung max. W / VA 100 VDC 120 VAC 120


    Original     		PDF HSR-634WT HSR-634WT6070 HSR-634WT hsr634wt

    ATC600F0R1BT250XT

    Abstract: No abstract text available
    Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6 ATC600F0R1BT250XT

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6

    NI-1230-4H

    Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS

    ATC100B390JT500XT

    Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0

    intel 27C512

    Abstract: HA20
    Text: a BACK DSP Microcomputer ADSP-2171/ADSP-2172/ADSP-2173 FEATURES 30 ns Instruction Cycle Time 33 MIPS from 16.67 MHz Crystal at 5.0 V 50 ns Instruction Cycle Time (20 MIPS) from 10 MHz Crystal at 3.3 V ADSP-2100 Family Code & Function Compatible with New Instruction Set Enhancements for Bit Manipulation Instructions, Multiplication Instructions, Biased


    Original     		PDF ADSP-2171/ADSP-2172/ADSP-2173 ADSP-2100 ADSP-2172) 16-Bit ParallSP-2171KST-104 ADSP-2171BST-104 ADSP-2171KS-104 ADSP-2171BS-104 ADSP-2173BST-80 ADSP-2173BS-80 intel 27C512 HA20

    HSR-V100

    Abstract: HSR-638BSL HSR-834 HSR-004 HSR510 HSR-302BSL HSR-634 HSR-830 HSR-V10K RS421
    Text: Hermetic Switch Reed Switches A reed switch consists of 2 or 3 metal reed contacts that are hermetically sealed inside a glass tube containing an inert, pressure or vacuum atmosphere. Depending on the original contact configuration, Normally Open NO or Normally Closed (NC), the contacts will either complete


    Original     		PDF

    MRF6VP3450H

    Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450H MRF6VP3450H 470-860 DVB-T Schematic MRF6Vp3450 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT

    250GX-0300-55-22

    Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 Arlon AN1955 MRF6VP121KHSR6

    HSR-830RT

    Abstract: HSA-12027 HSR-156WT HSR-069RT HSR-630RT HSR-190RT HSR-502R HSR-1015 HSR-910WT HSR-0025DT
    Text: 1529-2012:QuarkCatalogTempNew 9/10/12 5:58 PM Page 1529 17 Reed Switches, Proximity Sensors and Accessories B C B C B A RoHS C1 C2 Fig. B Fig. A Fig. C A Highest quality reed switches feature contacts hermetically sealed in a protective atmosphere. Protected contacts mean reliable operation in wet, oily, dirty — even explosive — environments. Glass capsule size ranges from a compact 2" glass length down to


    Original     		PDF

    e4571

    Abstract: EDR0 161 TMP 6101 w1853 FASM935 FASM935S FFR500 INC935 f9952a fujitsu fr-v
    Text: FUJITSU SEMICONDUCTOR CM71-00204-3E CONTROLLER MANUAL FR-V FAMILY SOFTUNE TM ASSEMBLER MANUAL for V6 FR-V FAMILY SOFTUNE TM ASSEMBLER MANUAL for V6 FUJITSU LIMITED PREFACE • Purpose of this manual and target readers This manual describes the functions and operations of the Fujitsu SOFTUNE Assembler operating on


    Original     		PDF CM71-00204-3E e4571 EDR0 161 TMP 6101 w1853 FASM935 FASM935S FFR500 INC935 f9952a fujitsu fr-v

    addressing modes in adsp-21xx

    Abstract: addressing modes of adsp 21xx processors direct addressing mode in adsp-21xx adsp 21xx addressing mode WRITE A PROGRAM OF ADDITION OF TWO NUMBERS type register ADSP-2100 ADSP-2111 ADSP-2171 ADSP-2181
    Text: Programming Model 12.1 12 OVERVIEW From a programming standpoint, the ADSP-21xx processors consist of three computational units, two data address generators, and a program sequencer, plus on-chip peripherals and memory that vary with each processor. Almost all operations using these architectural components


    Original     		PDF ADSP-21xx addressing modes in adsp-21xx addressing modes of adsp 21xx processors direct addressing mode in adsp-21xx adsp 21xx addressing mode WRITE A PROGRAM OF ADDITION OF TWO NUMBERS type register ADSP-2100 ADSP-2111 ADSP-2171 ADSP-2181

    C4532X7RIH685K

    Abstract: ATC600F1R0BT250XT AN1955 J373
    Text: Document Number: MRF8S18260H Rev. 0, 9/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6 C4532X7RIH685K ATC600F1R0BT250XT AN1955 J373

    DB3-5D

    Abstract: ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19260H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 HSR6 Designed for CDMA and multi - carrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6 DB3-5D ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 HSR6 Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Mixed-Signal Processor with Host Interface Port ADSP-21 msp50A/55A/56A FEATURES 77 ns Instruction Cycle Time from 13.00 MHz Crystal ADSP-2100 Family Code & Function Compatible 2K Words of On-Chip Program Memory RAM 1K Words of On-Chip Data Memory RAM


    OCR Scan     		PDF ADSP-21 msp50A/55A/56A ADSP-2100 msp56A 16-Bit 144-Pin

    MIPS26

    Abstract: adsp21msp59 HA20 27C512 DIL
    Text: A N A LO G ► D E V IC E S FEATURES 38 ns Instruction Cycle Tim e 26 MIPS from 13.00 MHz Crystal ADSP-2100 Family Code and Function Com patible w ith N ew Instruction Set Enhanced for Bit Manipulation Instructions, M ultiplication Instructions, Biased Rounding, and Global Interrupt Masking


    OCR Scan     		PDF ADSP-2100 ADSP-21msp59 16-Bit M8/59 100-Lead ADSP-21msp58BST-104 ADSP-21 msp59 MIPS26 adsp21msp59 HA20 27C512 DIL

    TSE 4041

    Abstract: ADSP-21msp56a PGA300 msp50 ADSP-21msp55A ADSP-21msp50 001C 27C64 80C51 HA20
    Text: ► ANALOG DEVICES Mixed-Signal Processor with Host Interface Port ADSP-21 msp50A/55A/56A FEATURES 77 ns Instruction Cycle Time from 13.00 MHz Crystal ADSP-2100 Family Code & Function Compatible 2K Words of On-Chip Program Memory RAM 1K Words of On-Chip Data Memory RAM


    OCR Scan     		PDF ADSP-21 msp50A/55A/56A ADSP-2100 msp56A 16-Bit 0G42h7G TSE 4041 ADSP-21msp56a PGA300 msp50 ADSP-21msp55A ADSP-21msp50 001C 27C64 80C51 HA20