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Kyocera AVX Components ATC100B1R8BW1000XT Capacitor Multilayer Ceramic 1.8pF 500V ±0.1pF 175°C T/R - Tape and Reel (Alt: ATC100B1R8BW1000XT)
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Avnet Americas	ATC100B1R8BW1000XT	Reel			100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
American Technical Ceramics Corp ATC100B150FW500X
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Bristol Electronics	ATC100B150FW500X		62			1 - 10 - 100 - 1000 - 10000 -	Get Quote
American Technical Ceramics Corp ATC100B101KP500XC
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Bristol Electronics	ATC100B101KP500XC		51			1 - 10 - 100 - 1000 - 10000 -	Get Quote
American Technical Ceramics Corp ATC100B300JT500X
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Bristol Electronics	ATC100B300JT500X		55			1 - 10 - 100 - 1000 - 10000 -	Get Quote
American Technical Ceramics Corp ATC100B331KW200X
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Bristol Electronics	ATC100B331KW200X		499			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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ATC100B Datasheets (3)

Part	Manufacturer	Description	Type	PDF
ATC100B101JT500XT	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
ATC100B470JT500XT	Freescale Semiconductor	RF Power Field Effect Transistor	Original	PDF
ATC100B8R2BT250XT	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers	Original	PDF

ATC100B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
12065G105AT2A Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
MRF6S21140HR3 Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
mrfe6vp5600hs Abstract: MRFE6VP5600H Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with	Original	PDF	MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	PDF	AFT26P100â
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND
K 1358 fet transistor Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
air variable capacitor Abstract: LET9045C M243 365 pF variable capacitor Text: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european	Original	PDF	LET9045C 2002/95/EC LET9045C air variable capacitor M243 365 pF variable capacitor
IrL 1540 N Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	PDF	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
303 2170 001 Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453 Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies	Original	PDF	MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Untitled Abstract: No abstract text available Text: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.	Original	PDF	BLF8G20LS-160V
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR	Original	PDF	MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability	Original	PDF	AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	PDF	AFT21S230S AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR3 AFT21S230SR3 AFT21S230-12SR3

ATC 1084 Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage	Original	PDF	MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1
ELXY Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz	Original	PDF	NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	PDF	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
mosfet j172 Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
L-Band 1200-1400 MHz Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910 Text: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description	Original	PDF	STAC1214-250 STAC1214-250 STAC265B L-Band 1200-1400 MHz ATC100B390 CR1206-8W ATC100B101 ATC100B910
bd139 equivalent transistor Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS Text: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION	Original	PDF	BLV862 AN98014 SCA57 bd139 equivalent transistor Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
Untitled Abstract: No abstract text available Text: AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 — 30 May 2011 Application note Document information Info Content Keywords BLF888A, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A.	Original	PDF	AN11062 BLF888A BLF888A, BLF888A.
MCR50V107M8X11 Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 MCR50V107M8X11 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3 CRCW120610R0FKTA
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to	Original	PDF	MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3
OSM248-2 Abstract: 18PH 18ph diode sd301 022ph sd304 SD300 SD303 FT401 Text: PIN CONFIGURATION GENERAL FEATURES • • • • • • • Lower cross-modulation and wider dynamic range than bipolar or single gate FETs Reverse AGC capability Linear mixing capability Diode protected gates High forward transconductance - gfs = 10,000umhos	OCR Scan	PDF	000umhos SD301 SD304 500MHz SD303 90IUUU OSM248-2 18PH 18ph diode sd301 022ph sd304 SD300 SD303 FT401

ATC100B Search Results

ATC100B Price and Stock

Kyocera AVX Components ATC100B1R8BW1000XT

American Technical Ceramics Corp ATC100B150FW500X

American Technical Ceramics Corp ATC100B101KP500XC

American Technical Ceramics Corp ATC100B300JT500X

American Technical Ceramics Corp ATC100B331KW200X

ATC100B Datasheets (3)

ATC100B Datasheets Context Search

12065G105AT2A

MRF6S21140HR3

mrfe6vp5600hs

Untitled

Untitled

transistor TL131

K 1358 fet transistor

air variable capacitor

IrL 1540 N

303 2170 001

Untitled

Untitled

Untitled

Untitled

ATC 1084

ELXY

G2225X7R225KT3AB

mosfet j172

L-Band 1200-1400 MHz

bd139 equivalent transistor

Untitled

MCR50V107M8X11

Untitled

OSM248-2