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    ATC100B910 Search Results

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    ATC100B910 Price and Stock

    American Technical Ceramics Corp ATC100B910KRW500X

    CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.000091 uF, THROUGH HOLE MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B910KRW500X 794
    • 1 $1.8
    • 10 $1.8
    • 100 $1.8
    • 1000 $0.828
    • 10000 $0.828
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    American Technical Ceramics Corp ATC100B910KP

    100B910KP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B910KP 97
    • 1 $1.875
    • 10 $1.875
    • 100 $1.125
    • 1000 $1.125
    • 10000 $1.125
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    American Technical Ceramics Corp ATC100B910JRW500X

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 5% +TOL, 5% -TOL, P90, 90PPM/CEL TC, 0.000091UF, THROUGH HOLE MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B910JRW500X 50
    • 1 $3.75
    • 10 $2.5
    • 100 $1.875
    • 1000 $1.875
    • 10000 $1.875
    		Buy Now

    American Technical Ceramics Corp ATC100B910KP500X

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 10% +TOL, 10% -TOL, P90, 90+/-20PPM/CEL TC, 0.000091UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B910KP500X 18
    • 1 $3.75
    • 10 $2.5
    • 100 $1.875
    • 1000 $1.875
    • 10000 $1.875
    		Buy Now

    American Technical Ceramics Corp ATC100B910KP500XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 10% +TOL, 10% -TOL, BG, 90+/-20PPM/CEL TC, 0.000091UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B910KP500XB 5
    • 1 $4.05
    • 10 $2.7
    • 100 $2.7
    • 1000 $2.7
    • 10000 $2.7
    		Buy Now
    Find more ATC100B910 price and stock on Findchips.com

    ATC100B910 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L-Band 1200-1400 MHz

    Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
    Text: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description


    Original     		PDF STAC1214-250 STAC1214-250 STAC265B L-Band 1200-1400 MHz ATC100B390 CR1206-8W ATC100B101 ATC100B910

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1310H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, industrial including laser and plasma exciters , broadcast (analog and digital),


    Original     		PDF MMRF1310H MMRF1310HR5 MMRF1310HSR5 MMRF1310HR5 7/2014Semiconductor,

    ATC100B620

    Abstract: LET9120 27291PC ATC100B101
    Text: LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package


    Original     		PDF LET9120 LET9120 ATC100B620 27291PC ATC100B101

    MRFE6VP6300

    Abstract: MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 0, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3 MRFE6VP6300 MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01

    MRFE6VP6300H

    Abstract: MRFE6VP6300HR3 MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300H MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980

    ATC100B101

    Abstract: STAC265B ATC100B910 ATC100B390 STAC1214-250
    Text: STAC1214-250 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet − preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz


    Original     		PDF STAC1214-250 STAC1214-250 STAC265B ATC100B101 ATC100B910 ATC100B390

    B10T

    Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 B10T multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22

    ATC100B910

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 ATC100B910

    ATC100B390

    Abstract: No abstract text available
    Text: STAC1214-250 LDMOS L-band radar transistor Datasheet - preliminary data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 14 dB gain over 1200 1400 MHz • ST air cavity / STAC package Description STAC265B


    Original     		PDF STAC1214-250 STAC265B STAC1214-250 DocID022749 ATC100B390

    250GX-0300-55-22

    Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 250GX-0300-55-22 ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1

    250GX-0300-55-22

    Abstract: ATC100B102JT50XT
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in


    Original     		PDF MMRF1012N MMRF1012NR1 250GX-0300-55-22 ATC100B102JT50XT

    Arlon CuClad PCB board material

    Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 Arlon CuClad PCB board material ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM