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    Alliance Memory Inc AS4C256K16E0-35TC

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    Bristol Electronics AS4C256K16E0-35TC 870 1
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    Alliance Semiconductor Corporation AS4C256K16E0-60JC

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    Bristol Electronics AS4C256K16E0-60JC 118
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    Alliance Memory Inc AS4C256K16E0-50JC

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    Bristol Electronics AS4C256K16E0-50JC 4
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    Alliance Memory Inc AS4C256K16E050JC

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    Alliance Semiconductor Corporation AS4C256K16E0-35TC

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    Quest Components AS4C256K16E0-35TC 696
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    AS4C256K16E0 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AS4C256K16E0 Alliance Semiconductor 5V 256K x CMOS DRAM (EDO) Original PDF
    AS4C256K16E0-30JC Alliance Semiconductor 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time Original PDF
    AS4C256K16E0-35JC Alliance Semiconductor 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time Original PDF
    AS4C256K16E0-50JC Alliance Semiconductor 5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time Original PDF
    AS4C256K16E0-50TC Alliance Semiconductor 5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time Original PDF
    AS4C256K16E0-60JC Alliance Semiconductor T(rac): 60ns, V(cc): 4.5 to 5.5V, high speed 256K x 16 CMOS DRAM (EDO) Scan PDF

    AS4C256K16E0 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AS4C256K16E0-50JC

    Abstract: No abstract text available
    Text: $6&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (AS4C256K16E0-25)


    Original     		AS4C256K16E0-25) 40-pin 40/44-pin I/O15 40/44-pin AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-50JC PDF

    AS4C256K16E0

    Abstract: AS4C256K16E0-35JC
    Text: AS4C256K16E0 5V 256Kx16 CMOS DRAM EDO Features • Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (AS4C256K16E0-25)


    Original     		AS4C256K16E0 AS4C256K16E0-25) 40-pin 40/44-pin 200vailable AS4C256K16E0 AS4C256K16E0-35JC PDF

    Untitled

    Abstract: No abstract text available
    Text: AS4C256K16E0 5V 256Kx16 CMOS DRAM EDO Features • Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (AS4C256K16E0-25)


    Original     		AS4C256K16E0 AS4C256K16E0-25) 40-pin 40/44-pin PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620 PDF

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256 PDF

    Untitled

    Abstract: No abstract text available
    Text: AS4C256K16E0 5V 256Kx 16 CMOS DRAM EDO Features • Refresh - 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only o r CAS-before-RAS refresh o r self-refresh - Self-refresh o p tio n is available for n e w g en eratio n device • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits


    OCR Scan     		AS4C256K16E0 256Kx AS4C256K16E0-25) S4C256K16E0-30JC S4C256K16E0-35JC AS4C256K16E0-50JC S4C256K16E0-50TC PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS4C256K16E0 I I 5V 2 5 6 K X 16 C M O S DRAM EDO Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • H ig h sp e e d - R A S -only o r C A S-before-R A S re fre s h o r se lf-re fre sh


    OCR Scan     		AS4C256K16E0 PDF

    as4c256k16eo

    Abstract: 256KX16 AS4C256K16E0 LO301
    Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed


    OCR Scan     		AS4C256K16E0 256KX16 4C256K16E0-45) 40-pin I/015 I/014 as4c256k16eo LO301 PDF

    AS4C256K16F0-60JC

    Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
    Text: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization


    OCR Scan     		AS7C164- AS7C164-8JC 64-10JC AS7C164L-I AS7C164-12PC AS7C164L-1 AS7C164L-UJC AS7C2S6-12PC AS7C164-1SPC 64L-I5PC AS4C256K16F0-60JC AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3 PDF

    6E025

    Abstract: No abstract text available
    Text: Features • Refresh • O rganization: 262,144 w o rd s x 16 bits - 512 refresh cycles, 8 ms refresh interval • H ig h speed - 2 5 / 3 0 / 3 5 / 5 0 ns R A S access tim e - RA S-only o r CAS-before-RAS refresh o r self-refresh - 1 2 /1 6 /1 8 /2 5 ns co lu m n address access tim e


    OCR Scan     		40-pin 40/44-pin 6E0-25JC S4C256K 16E0-30JC 256K1 6E0-35JC 16E0-50JC 6E025 PDF

    AS4C256K16E0-45JC

    Abstract: No abstract text available
    Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 16 b its • E x te n d e d d a ta o u t • H ig h s p e e d • 5 1 2 r e f r e s h c y c le s , 8 m s r e f r e s h in te r v a l


    OCR Scan     		PDF

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


    OCR Scan     		256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V PDF

    SRAM 64KX8 5V

    Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
    Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164


    OCR Scan     		AS7C164 AS7C256 AS7C512 AS7C513 AS7C3513 AS7C1024 AS7C31024 AS7C1026 AS7C31026 AS7C1025 SRAM 64KX8 5V 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40 PDF

    AS4C256K16E0-60JC

    Abstract: as4c256k16eo 12 SQ 045 JF 256KX16 AS4C256K16E0
    Text: H ig h P e r fo r m a n c e 256K X 16 CMOS DRAM gg A S4C 256K 16E 0 II H iah speed 2 5 6 K x l6 CMOS DRAM EDO Preliminary information Features • 5 1 2 r e f r e s h c y c le s, 8 m s r e f r e s h in te rv a l • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s X 16 b its


    OCR Scan     		AS4C256K16E0 256KX16 256Kxl6 4C256K16E0-50) 40-pin 40/44-pin I/015 AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-60JC as4c256k16eo 12 SQ 045 JF AS4C256K16E0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information • 5 1 2 re fre s h cycles, 8 m s re fre s h in terv al - RAS-only o r CAS-before-RAS refresh • R e a d -m o d ify -w rite • T T L -co m p atib le, th re e -s ta te I / O • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its


    OCR Scan     		4C256K16E0-25) 4C2S6K16E0-25) 40-pin AS4C256K16E0-25JC AS4C2S6K16E0-3OJC AS4C256KI6 AS4C256K16E0-S0JC AS4C256K16E0-S0TC 256K16E0 l-30001 PDF

    L30001

    Abstract: D1130
    Text: r H igh Performance 256K X 16 CMOS DRAM gg A S 4C 256K 16E 0 II H igh Speed 2 5 6 K x l6 CMOS DRAM E D O Preliminary Features • 5 1 2 refresh cycles, 8 m s refresh interval • O rganization: 2 6 2 ,1 4 4 w o rd s b y 16 bits • H igh speed - RAS-only o r CAS-before-RAS refresh


    OCR Scan     		l-30001-* 10G3H4, L30001 D1130 PDF