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    Cornell Dubilier Electronics Inc BLH256K122C084

    DC LINK, THB, 85/85, AEC-Q200
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    DigiKey BLH256K122C084 Bulk 20
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    Mouser Electronics BLH256K122C084
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    Newark BLH256K122C084 Bulk 20
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    • 100 $9.07
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    Richardson RFPD BLH256K122C084 20
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    KEMET Corporation T550B256K100AT

    CAP TANT POLY 25UF 100V AXIAL
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    DigiKey T550B256K100AT Tray 20
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    TTI T550B256K100AT Tray 1
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    Cornell Dubilier Electronics Inc BLH256K112C084

    DC LINK, THB, 85/85, AEC-Q200
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    DigiKey BLH256K112C084 Bulk 20
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    Mouser Electronics BLH256K112C084
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    Newark BLH256K112C084 Bulk 20
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    Richardson RFPD BLH256K112C084 20
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    • 1000 $6.15
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    KEMET Corporation T550B256K100BH

    CAP TANT POLY 25UF 100V AXIAL
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    DigiKey T550B256K100BH Tray 40
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    Cornell Dubilier Electronics Inc BLH256K102B114

    DC LINK, THB, 85/85, AEC-Q200
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    DigiKey BLH256K102B114 Bulk 28
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    Mouser Electronics BLH256K102B114
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    Newark BLH256K102B114 Bulk 28
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    Richardson RFPD BLH256K102B114 28
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    • 1000 $4.86
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    256K1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TBA 129-5

    Abstract: WMS256K16L-XXX WMS256K16-XXX
    Text: White Electronic Designs 256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ PIN CONFIGURATION FOR 256K16-XXX 44 CSOJ Packaging 44 FlatpacK • 44 pin Ceramic SOJ Package 102


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    PDF WMS256K16-XXX 256Kx16 MIL-STD-883 256Kx16 I/O9-16 WMS256K16L-XXX 01HNX 02HNX 03HNX TBA 129-5 WMS256K16-XXX

    D14D

    Abstract: CXD1852Q MD10 MD11 MD14 ha3120
    Text: CXD1852Q MPEG1 Decoder For the availability of this product, please contact the sales office. Description The CXD1852Q is a single-chip MPEG1 decoder with a built-in CD-ROM decoder which allows decoding of MPEG1 system, video and audio layers. A built-in CD-ROM decoder enables direct connection


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    PDF CXD1852Q CXD1852Q 120PIN QFP-120P-L01 QFP120-P-2828-A D14D MD10 MD11 MD14 ha3120

    Untitled

    Abstract: No abstract text available
    Text: $6/&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (256K16E0-35)


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    PDF AS4LC256K16E0-35) 40-pin 40/44-pin I/O15 AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E0-45JC

    MB86907

    Abstract: 00FF mb8690
    Text: TurboSPARC Microprocessor User’s Guide October 1996 Revision 1.0 TurboSPARC Microprocessor User’s Manual Table of Contents Chapter 1 The TurboSPARC Microprocessor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1 1.1 Integer Unit and Floating Point Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-2


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    PDF PP-UM-20383-10/96 MB86907 00FF mb8690

    PG-FP5 Flash Memory Programmer

    Abstract: 100 pin wqfn V850 Dual Voltage Flash JC3-L JH3-E P910 V850ES V850ES/jg3-L v850es/jg3-l NEC V850ES/JJ3
    Text: V850ES/Jx3 V850ES/Jx3 LPC LPC Low (Low Pin Pin Count Count) Series Series V850ES/Jx3-H, V850ES/Jx3-L, V850ES/Jx3-E 32 bit Single-chip Microcontrollers Feature V850ES/Jx3-L Industry-Leading Low power consumption Ideal for Battery-Driven Systems Low power & Low voltage


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    PDF V850ES/Jx3 V850ES/Jx3-H, V850ES/Jx3-L, V850ES/Jx3-E V850ES/Jx3-L V850ES/Jx3-H 98MIPS, PG-FP5 Flash Memory Programmer 100 pin wqfn V850 Dual Voltage Flash JC3-L JH3-E P910 V850ES V850ES/jg3-L v850es/jg3-l NEC V850ES/JJ3

    AS4LC256K16EO

    Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
    Text: 256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time


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    PDF AS4LC256K16EO AS4LC256K16EO-35) AS4LC256K16EO35) 40-pin 40/44-pin I/O15 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16EO AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28

    AS4C256K16FO

    Abstract: AS4C256K16FO-60
    Text: 256K16FO 5V 256K X 16 CMOS DRAM Fast Page Mode Features • Organization: 262,144 words x 16 bits • High speed - 25/30/35/50 ns RAS access time - 12/16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption


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    PDF AS4C256K16FO ASAS4C256K16FO-50) AS4C256K16FO-50 40-pin 40/44-pin AS4C256K16F0-25JC AS4C256K16F0-30JC AS4C256K16F0-35JC AS4C256K16FO-50JC AS4C256K16FO AS4C256K16FO-60

    WMS256K16L-XXX

    Abstract: WMS256K16-XXX
    Text: 256K16-XXX HI-RELIABILITY PRODUCT 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging •44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Flatpack (Package 225)


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    PDF WMS256K16-XXX 256Kx16 MIL-STD-883 256Kx16 WMS256K16L-XXX I/O9-16 A0-17 01HNX 02HNX WMS256K16-XXX

    First line 7aa ed tms 3874 9v voltage regulator

    Abstract: RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508
    Text: R O C K W E L L Network access S E M I C O N D U C T O R S Y S T E M S RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY datasheet PROVIDING HIGH SPEED MULTIMEDIA CONNECTIONS September 1998 Preliminary Information This document contains information on a product under development. The parametric information contains target


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    PDF RS8250/1/2/3/4/5 RS825x N825xDSA First line 7aa ed tms 3874 9v voltage regulator RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e


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    PDF AS4LC256K16E0-35) AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC AS4LC256K16E0-35TC AS4LC256K16E0-45TC AS4LC256K16E0-60TC 256K16E0

    Untitled

    Abstract: No abstract text available
    Text: xDSL WAN Ethernet Bridge Controller M B 86976 Package • 144-pin, plastic QFP • FPT-144P-M03 ► Descrip tio n The Fujitsu MB 86976 xDSL WAN Ethernet Bridge Controller is a CMOS VLSI device designed for LAN-WAN bridging applications. It offers a high level of integration that


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    PDF 144-pin, FPT-144P-M03 MB86976 144-pin

    Untitled

    Abstract: No abstract text available
    Text: C3 256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized as256Kx16


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    PDF WMS256K16-XXX 256KX16 MIL-STD-883 as256Kx16 l/Cte-16 Ao-17 256K16

    Untitled

    Abstract: No abstract text available
    Text: a W 256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess T im e s 17, 20, 25, 35ns D ata I/O C o m p a tib le w ith 3.3 V devices ■ M IL-S T D -883 C o m p lia n t D evices A v a ila b le 2V M in im u m D ata R ete n tio n fo r b a tte ry back up o p e ra tio n


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    PDF MS256K16-XXX 256Kx16 256Kx16 02HMX 03HMX 01HNX 02HIMX 03HNX

    Untitled

    Abstract: No abstract text available
    Text: a W 256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range


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    PDF MS256K16-XXX 256Kx16 256Kx16 WMS256K16-XXX AO-17 02HMX 03HMX 01HNX 02HIMX 03HNX

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC F 3 0 N 1 2 5 6 K X 1 8 /1 2 8 K x 36 H S T L , P I P E L IN E D L A T E W R IT E S R A M A C M h I A T F WRITE SRAM FEATURES • Fast cycle tim es 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single +3.3V + 0 .3 V /-0 .2 V pow er supply (V dd)


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    PDF MT59L256H18P MT59L128H36P 18/12BK MT59L256H1BP

    Untitled

    Abstract: No abstract text available
    Text: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation


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    PDF 256Kx16 MIL-STD-883 256Kx16 WMS256K16-XXX AO-17 256Kx 01HXX* 02HXX* 03HXX*

    AS4C256K16F0-60JC

    Abstract: ez 948 AS4C256K16F0 LRAL taa 723
    Text: WÊ High Performance 256Kxl6 CMOS DRAM 256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY F E A TU R E S 512 refresh cycles, 8 ms refresh interval * Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh • High speed


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    PDF AS4C256K16F0 256Kxl6 256Kxl6 4C256K16F0-50) I/014 I/013 I/012 40-pin AS4C256KI6F0-50JC AS4C256K16F0-60JC AS4C256K16F0-60JC ez 948 AS4C256K16F0 LRAL taa 723

    as4c256k16eo

    Abstract: 256KX16 AS4C256K16E0 LO301
    Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed


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    PDF AS4C256K16E0 256KX16 4C256K16E0-45) 40-pin I/015 I/014 as4c256k16eo LO301

    Untitled

    Abstract: No abstract text available
    Text: t t W 256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation


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    PDF MS256K16-XDLX 256Kx16 MIL-STD-883 256Kx16 256K16 01HXX' 03HXX' 256KX

    Untitled

    Abstract: No abstract text available
    Text: 77 256K16-XXX M/HITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns Data I/O C o m p a tib le w it h 3.3V devices ■ 2 V M in im u m Data R etention fo r b a tte ry back up o pe ra tio n M IL-STD -883 C o m p lia n t Devices A v a ila b le


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    PDF WMS256K16-XXX 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: 256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e


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    PDF AS4LC256K16E0 AS4LC256K16E0-35) 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC 40/44-pin AS4LC256K16E0-35TC

    YH 13001

    Abstract: SP 13001
    Text: Advance information •■ A S4V 256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h


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    PDF C256K16E0 40-pin AS4VC256K16E0-45JC AS4VC256K16E0-60JC AS4VC256K16E0-45TC AS4VC256K16E0-60TC 256K16E0 YH 13001 SP 13001

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |U |I C R O N 256K 256KX 16/18 SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Fast access tim es: 4.5, 5, 6 and 7ns F ast O E# access tim es: 4 .5 ,5 an d 6ns


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    PDF 6/18D8

    6E025

    Abstract: No abstract text available
    Text: Features • Refresh • O rganization: 262,144 w o rd s x 16 bits - 512 refresh cycles, 8 ms refresh interval • H ig h speed - 2 5 / 3 0 / 3 5 / 5 0 ns R A S access tim e - RA S-only o r CAS-before-RAS refresh o r self-refresh - 1 2 /1 6 /1 8 /2 5 ns co lu m n address access tim e


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    PDF 40-pin 40/44-pin 6E0-25JC S4C256K 16E0-30JC 256K1 6E0-35JC 16E0-50JC 6E025