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    APT5010L Price and Stock

    Microchip Technology Inc APT5010LFLLG

    MOSFET N-CH 500V 46A TO264
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    DigiKey APT5010LFLLG Tube 43 1
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    Microchip Technology Inc APT5010LFLLG
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    Onlinecomponents.com APT5010LFLLG
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    Microchip Technology Inc APT5010LLLG

    MOSFET N-CH 500V 46A TO264
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    DigiKey APT5010LLLG Tube 30 1
    • 1 $17.02
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    Avnet Americas APT5010LLLG Tube 26 Weeks 40
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    Mouser Electronics APT5010LLLG
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    Newark APT5010LLLG Bulk 40
    • 1 $17.02
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    Microchip Technology Inc APT5010LLLG
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    Onlinecomponents.com APT5010LLLG
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    TME APT5010LLLG 1
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    NAC APT5010LLLG Tube 22
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    Richardson RFPD APT5010LLLG 40
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    Microchip Technology Inc APT5010LVRG

    MOSFET N-CH 500V 47A TO264
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    DigiKey APT5010LVRG Tube 5 1
    • 1 $18.44
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    Avnet Americas APT5010LVRG Tube 26 Weeks 30
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    Mouser Electronics APT5010LVRG 972
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    Verical APT5010LVRG 61 3
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    • 1 $18.44
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    Microchip Technology Inc APT5010LVRG
    • 1 $18.44
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    Onlinecomponents.com APT5010LVRG 61
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    TME APT5010LVRG 1
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    NAC APT5010LVRG Tube 20
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    Microchip Technology Inc APT5010LVFRG

    MOSFET N-CH 500V 47A TO264
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    DigiKey APT5010LVFRG Tube 30
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    Avnet Americas APT5010LVFRG Tube 32 Weeks 30
    • 1 $19.6
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    Mouser Electronics APT5010LVFRG
    • 1 $19.6
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    Newark APT5010LVFRG Bulk 30
    • 1 $19.6
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    Microchip Technology Inc APT5010LVFRG
    • 1 $19.6
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    Onlinecomponents.com APT5010LVFRG
    • 1 $18.71
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    TME APT5010LVFRG 1
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    NAC APT5010LVFRG Tube 19
    • 1 $18.17
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    Master Electronics APT5010LVFRG
    • 1 $18.71
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    APT Semiconductor APT5010LLL

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    Bristol Electronics APT5010LLL 1,390
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    Find more APT5010L price and stock on Findchips.com

    APT5010L Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5010LFLL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010LFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5010LFLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 46A TO-264 Original PDF
    APT5010LFLLG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 46A TO-264 Original PDF
    APT5010LLC Advanced Power Technology POWER MOS VI 500V 47A 0.100 Ohm Original PDF
    APT5010LLL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010LLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT5010LLLG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 46A TO-264 Original PDF
    APT5010LVFR Microsemi Power MOS V FREDFET Original PDF
    APT5010LVFRG Microchip Technology MOSFET N-CH 500V 47A TO264 Original PDF
    APT5010LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010LVRG Microchip Technology MOSFET N-CH 500V 47A TO264 Original PDF

    APT5010L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT5010LVR

    Abstract: apt5010l
    Text: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT5010LVR O-264 O-264 APT5010LVR apt5010l

    APT5010

    Abstract: APT5010LFLL
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-247 APT5010 APT5010LFLL

    MOS 4362

    Abstract: No abstract text available
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-247 MOS 4362

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT5010B2LL APT5010LLL O-247

    APT5010B2LL

    Abstract: APT5010LLL
    Text: APT5010B2LL APT5010LLL 500V 46A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-264 O-247 APT5010B2LL APT5010LLL

    Untitled

    Abstract: No abstract text available
    Text: APT5010LFLC 47A 0.100 W 500V POWER MOS VITM FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5010LFLC O-264 O-264 APT5010LFLC

    c9015

    Abstract: APT5010B2FLL APT5010LFLL 0460F TR4010
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-264 O-247 c9015 APT5010B2FLL APT5010LFLL 0460F TR4010

    Untitled

    Abstract: No abstract text available
    Text: APT5010LLC 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT5010LLC O-264 O-264 MIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2FLC APT5010LFLC 500V 47A 0.100W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5010B2FLC APT5010LFLC O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL APT5010LLL 500V 46A 0.100Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-247

    APT5010 264

    Abstract: MJ1800 APT5010B2LL APT5010LLL
    Text: APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-264 O-247 APT5010 264 MJ1800 APT5010B2LL APT5010LLL

    TO-264 Package

    Abstract: APT5010LLC
    Text: APT5010LLC 500V 47A 0.100 Ω POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5010LLC O-264 O-264 APT5010LLC 1TD-750 TO-264 Package

    MOS 4362

    Abstract: No abstract text available
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-264 O-247 MOS 4362

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-264 O-247

    APT5010LVFR

    Abstract: No abstract text available
    Text: APT5010LVFR 47A 0.100Ω 500V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5010LVFR O-264 O-264 APT5010LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-264 O-247

    25C2240

    Abstract: APT5010LFLL APT5010B2FLL
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-264 O-247 25C2240 APT5010LFLL APT5010B2FLL

    APT5010LLC

    Abstract: APT5010B2LC
    Text: APT5010B2LC APT5010LLC 500V 47A 0.100W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and


    Original     		PDF APT5010B2LC APT5010LLC O-264 O-264 APT5010 O-247 APT5010LLC APT5010B2LC

    3.5kw pfc

    Abstract: UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc
    Text: APT 0101 By: Denis Grafham IMPROVED POWER MOSFETS BOOST EFFICIENCY IN A 3.5kW SINGLE PHASE PFC IMPROVED POWERMOSFETS BOOST EFFICIENCY IN A 3.5KW SINGLE PHASE PFC Author: Denis Grafham, European Applications, Advanced Power Technology, F-24300 Nontron Abstract:


    Original     		PDF F-24300 NH03054. D-90471 UC1854/UC2854/UC3854 pp171-177, D-90471N 3.5kw pfc UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    Untitled

    Abstract: No abstract text available
    Text: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5010LVFR O-264 APT5010LVFR -10mS -100mS

    APT5010LVR

    Abstract: No abstract text available
    Text: APT5010LVR A dvanced P o w er Te c h n o l o g y P O W E R M O 500 ' S 47 V 0 100 2 A . Í V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010LVR O-264 APT5010LVR MIL-STD-750 O-264AA

    CCO-40

    Abstract: APT5010LVR 250DS
    Text: APT501OLVR • R A dvanced W .\A pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT501OLVR O-264 APT5010LVR CCO-40 250DS

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr