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Microchip Technology Inc APT5010B2LLG MOSFET N-CH 500V 46A T-MAX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT5010B2LLG	Tube			40	1 - 10 - 100 $17.02 1000 $17.02 10000 $17.02	Buy Now
Avnet Americas	APT5010B2LLG	Tube		26 Weeks	40	1 - 10 - 100 $14.4821 1000 $13.7573 10000 $13.7573	Buy Now
Mouser Electronics	APT5010B2LLG					1 $17.02 10 $17.02 100 $14.7 1000 $14.7 10000 $14.7	Get Quote
Newark	APT5010B2LLG	Bulk			40	1 $17.02 10 $17.02 100 $14.7 1000 $13.8 10000 $13.8	Buy Now
Microchip Technology Inc	APT5010B2LLG	Tube		26 Weeks		1 $17.02 10 $17.02 100 $14.7 1000 $13.48 10000 $13.05	Buy Now

Onlinecomponents.com	APT5010B2LLG					1 $16.25 10 $14.93 100 $13.64 1000 $13.24 10000 $13.24	Buy Now
TME	APT5010B2LLG				1	1 $24.62 10 $19.58 100 $19.58 1000 $19.58 10000 $19.58	Get Quote
NAC	APT5010B2LLG	Tube			22	1 $15.79 10 $15.79 100 $14.54 1000 $13.48 10000 $13.48	Buy Now
Master Electronics	APT5010B2LLG					1 $16.25 10 $14.93 100 $13.64 1000 $13.24 10000 $13.24	Buy Now
ADVA APT5010B2LL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	APT5010B2LL		2,456			1 $19.575 10 $19.575 100 $19.575 1000 $13.05 10000 $13.05	Buy Now
Microsemi Corporation APT5010B2LLG N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 184 A; Minimum DS Breakdown Voltage: 500 V; Operating Mode: ENHANCEMENT MODE;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	APT5010B2LLG		114			1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT5010B2LL Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT5010B2LL		Advanced Power Technology	POWER MOS 7 500V 46A 0.100 Ohm		Original	PDF
APT5010B2LL		Microsemi	Power MOS 7 Low Loss MOSFET		Original	PDF
APT5010B2LLG		Microsemi	Power MOSFET; Package: T-MAX [B2]; ID (A): 46; RDS(on) (Ohms): 0.1; BVDSS (V): 500;		Original	PDF

APT5010B2LL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching	Original	APT5010B2LL APT5010LLL O-247	PDF
APT5010B2LL Abstract: APT5010LLL Text: APT5010B2LL APT5010LLL 500V 46A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT5010B2LL APT5010LLL O-264 O-264 O-247 APT5010B2LL APT5010LLL	PDF
Untitled Abstract: No abstract text available Text: APT5010B2LL APT5010LLL 500V 46A 0.100Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT5010B2LL APT5010LLL O-264 O-247	PDF
APT5010 264 Abstract: MJ1800 APT5010B2LL APT5010LLL Text: APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	APT5010B2LL APT5010LLL O-264 O-264 O-247 APT5010 264 MJ1800 APT5010B2LL APT5010LLL	PDF
Untitled Abstract: No abstract text available Text: APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	APT5010B2LL APT5010LLL O-264 O-264 O-247	PDF
Untitled Abstract: No abstract text available Text: APT5010B2LL APT5010LLL 0.100Ω 500V 46A R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT5010B2LL APT5010LLL O-264 O-264 O-247	PDF
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit	PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original		PDF
SOT-227 lead frame Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic	Original	MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series	PDF
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original		PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original		PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF